Interlayer electron-phonon coupling in WSe 2/hBN heterostructures

Chenhao Jin, Jonghwan Kim, Joonki Suh, Zhiwen Shi, Bin Chen, Xi Fan, Matthew Kam, Kenji Watanabe, Takashi Taniguchi, Sefaattin Tongay, Alex Zettl, Junqiao Wu, Feng Wang

Research output: Contribution to journalArticlepeer-review

93 Scopus citations

Abstract

Engineering layer-layer interactions provides a powerful way to realize novel and designable quantum phenomena in van der Waals heterostructures. Interlayer electron-electron interactions, for example, have enabled fascinating physics that is difficult to achieve in a single material, such as the Hofstadter's butterfly in graphene/boron nitride (hBN) heterostructures. In addition to electron-electron interactions, interlayer electron-phonon interactions allow for further control of the physical properties of van der Waals heterostructures. Here we report an interlayer electron-phonon interaction in WSe 2 /hBN heterostructures, where optically silent hBN phonons emerge in Raman spectra with strong intensities through resonant coupling to WSe 2 electronic transitions. Excitation spectroscopy reveals the double-resonance nature of such enhancement, and identifies the two resonant states to be the A exciton transition of monolayer WSe 2 and a new hybrid state present only in WSe 2 /hBN heterostructures. The observation of an interlayer electron-phonon interaction could open up new ways to engineer electrons and phonons for device applications.

Original languageEnglish (US)
Pages (from-to)127-131
Number of pages5
JournalNature Physics
Volume13
Issue number2
DOIs
StatePublished - Feb 1 2017

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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