Interlaboratory study of eddy-current measurement of excess-carrier recombination lifetime

Adrienne L. Blum; James S. Swirhun; Ronald A. Sinton; Fei Yan; Stanislau Herasimenka; Thomas Roth; Kevin Lauer; Jonas Haunschild; Bianca Lim; Karsten Bothe; Ziv Hameiri; Bjoern Seipel; Rentian Xiong; Marwan Dhamrin; John D. Murphy

doi:10.1109/JPHOTOV.2013.2284375

Interlaboratory study of eddy-current measurement of excess-carrier recombination lifetime

Adrienne L. Blum, James S. Swirhun, Ronald A. Sinton, Fei Yan, Stanislau Herasimenka, Thomas Roth, Kevin Lauer, Jonas Haunschild, Bianca Lim, Karsten Bothe, Ziv Hameiri, Bjoern Seipel, Rentian Xiong, Marwan Dhamrin, John D. Murphy

Research output: Contribution to journal › Article › peer-review

48 Scopus citations

Abstract

Excess-carrier recombination lifetime is a key parameter in silicon solar cell design and production. With the vast international use and recent standardization (SEMI PV13) of eddy-current wafer and brick silicon lifetime test instruments, it is important to quantify the inter-and intralaboratory repeatability. This paper presents the results of an international interlaboratory study conducted with 24 participants to determine the precision of the SEMI PV13 eddy-current carrier lifetime measurement test method. Overall, the carrier recombination lifetime between-laboratory reproducibility was found to be within ±11% for the quasi-steady-state mode and ±8% for transient mode for wafer samples, and within ±4% for bulk samples.

Original language	English (US)
Article number	6631475
Pages (from-to)	525-531
Number of pages	7
Journal	IEEE Journal of Photovoltaics
Volume	4
Issue number	1
DOIs	https://doi.org/10.1109/JPHOTOV.2013.2284375
State	Published - Jan 2014

Keywords

Charge carrier lifetime
eddy currents
photoconductivity
silicon

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/JPHOTOV.2013.2284375

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Blum, A. L., Swirhun, J. S., Sinton, R. A., Yan, F., Herasimenka, S., Roth, T., Lauer, K., Haunschild, J., Lim, B., Bothe, K., Hameiri, Z., Seipel, B., Xiong, R., Dhamrin, M., & Murphy, J. D. (2014). Interlaboratory study of eddy-current measurement of excess-carrier recombination lifetime. IEEE Journal of Photovoltaics, 4(1), 525-531. Article 6631475. https://doi.org/10.1109/JPHOTOV.2013.2284375

Blum, AL, Swirhun, JS, Sinton, RA, Yan, F, Herasimenka, S, Roth, T, Lauer, K, Haunschild, J, Lim, B, Bothe, K, Hameiri, Z, Seipel, B, Xiong, R, Dhamrin, M & Murphy, JD 2014, 'Interlaboratory study of eddy-current measurement of excess-carrier recombination lifetime', IEEE Journal of Photovoltaics, vol. 4, no. 1, 6631475, pp. 525-531. https://doi.org/10.1109/JPHOTOV.2013.2284375

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abstract = "Excess-carrier recombination lifetime is a key parameter in silicon solar cell design and production. With the vast international use and recent standardization (SEMI PV13) of eddy-current wafer and brick silicon lifetime test instruments, it is important to quantify the inter-and intralaboratory repeatability. This paper presents the results of an international interlaboratory study conducted with 24 participants to determine the precision of the SEMI PV13 eddy-current carrier lifetime measurement test method. Overall, the carrier recombination lifetime between-laboratory reproducibility was found to be within ±11% for the quasi-steady-state mode and ±8% for transient mode for wafer samples, and within ±4% for bulk samples.",

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AU - Lauer, Kevin

AU - Haunschild, Jonas

AU - Lim, Bianca

AU - Bothe, Karsten

AU - Hameiri, Ziv

AU - Seipel, Bjoern

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Interlaboratory study of eddy-current measurement of excess-carrier recombination lifetime

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