Interference phenomena due to a double bend in a quantum wire

J. C. Wu; M. N. Wybourne; W. Yindeepol; A. Weisshaar; S. M. Goodnick

doi:10.1063/1.105558

Interference phenomena due to a double bend in a quantum wire

J. C. Wu, M. N. Wybourne, W. Yindeepol, A. Weisshaar, S. M. Goodnick

Research output: Contribution to journal › Article › peer-review

71 Scopus citations

Abstract

Narrow channel devices were fabricated using a split-gate high electron mobility transistor structure in which electrons are forced through a double-bend discontinuity. The low-temperature conductance shows a number of peaks in the lowest quantized conductance plateau which correspond qualitatively to resonance effects that are predicted for the geometrical discontinuities of the double bend.

Original language	English (US)
Pages (from-to)	102-104
Number of pages	3
Journal	Applied Physics Letters
Volume	59
Issue number	1
DOIs	https://doi.org/10.1063/1.105558
State	Published - 1991
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.105558

Cite this

@article{cd34ecf75fa34595b30e19e5938869b4,

title = "Interference phenomena due to a double bend in a quantum wire",

abstract = "Narrow channel devices were fabricated using a split-gate high electron mobility transistor structure in which electrons are forced through a double-bend discontinuity. The low-temperature conductance shows a number of peaks in the lowest quantized conductance plateau which correspond qualitatively to resonance effects that are predicted for the geometrical discontinuities of the double bend.",

author = "Wu, {J. C.} and Wybourne, {M. N.} and W. Yindeepol and A. Weisshaar and Goodnick, {S. M.}",

year = "1991",

doi = "10.1063/1.105558",

language = "English (US)",

volume = "59",

pages = "102--104",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "1",

}

TY - JOUR

T1 - Interference phenomena due to a double bend in a quantum wire

AU - Wu, J. C.

AU - Wybourne, M. N.

AU - Yindeepol, W.

AU - Weisshaar, A.

AU - Goodnick, S. M.

PY - 1991

Y1 - 1991

N2 - Narrow channel devices were fabricated using a split-gate high electron mobility transistor structure in which electrons are forced through a double-bend discontinuity. The low-temperature conductance shows a number of peaks in the lowest quantized conductance plateau which correspond qualitatively to resonance effects that are predicted for the geometrical discontinuities of the double bend.

AB - Narrow channel devices were fabricated using a split-gate high electron mobility transistor structure in which electrons are forced through a double-bend discontinuity. The low-temperature conductance shows a number of peaks in the lowest quantized conductance plateau which correspond qualitatively to resonance effects that are predicted for the geometrical discontinuities of the double bend.

UR - http://www.scopus.com/inward/record.url?scp=0001556742&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001556742&partnerID=8YFLogxK

U2 - 10.1063/1.105558

DO - 10.1063/1.105558

M3 - Article

AN - SCOPUS:0001556742

VL - 59

SP - 102

EP - 104

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 1

ER -

Interference phenomena due to a double bend in a quantum wire

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this