INTERFERENCE ENHANCED RAMAN SCATTERING STUDY OF THE INTERFACIAL REACTION OF Pd ON a-Si:H.

R. J. Nemanich; C. C. Tsai; M. J. Thompson; T. W. Sigmon

doi:10.1116/1.571085

INTERFERENCE ENHANCED RAMAN SCATTERING STUDY OF THE INTERFACIAL REACTION OF Pd ON a-Si:H.

R. J. Nemanich, C. C. Tsai, M. J. Thompson, T. W. Sigmon

Research output: Contribution to journal › Conference article › peer-review

64 Scopus citations

Abstract

The application of interference enhanced Raman scattering to probe the structure of metal/semiconductor interfaces is described. This method is used to study the interface structures of Pd on hydrogenated amorphous Si(a-Si:H) with particular attention to the effects of a native oxide layer on the a-Si:H. It is found that for deposition on lightly oxidized a-Si:H, approximately 20 A of Pd is consumed for form a crystalline silicide interfacial structure with composition near Pd//2Si. Annealing causes growth of this phase and further consumption of Pd until a second phase of Pd//2Si is observed.

Original language	English (US)
Pages (from-to)	685-688
Number of pages	4
Journal	Journal of vacuum science & technology
Volume	19
Issue number	3
DOIs	https://doi.org/10.1116/1.571085
State	Published - Jan 1 1981
Externally published	Yes
Event	Proc of the Annu Conf on the Phys of Compd Semicond Interfaces, 8th - Williamsburg, VA, USA Duration: Jan 27 1981 → Jan 29 1981

ASJC Scopus subject areas

Engineering(all)

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10.1116/1.571085

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@article{e277f9b9427a4b25931614935eb79a6c,

title = "INTERFERENCE ENHANCED RAMAN SCATTERING STUDY OF THE INTERFACIAL REACTION OF Pd ON a-Si:H.",

abstract = "The application of interference enhanced Raman scattering to probe the structure of metal/semiconductor interfaces is described. This method is used to study the interface structures of Pd on hydrogenated amorphous Si(a-Si:H) with particular attention to the effects of a native oxide layer on the a-Si:H. It is found that for deposition on lightly oxidized a-Si:H, approximately 20 A of Pd is consumed for form a crystalline silicide interfacial structure with composition near Pd//2Si. Annealing causes growth of this phase and further consumption of Pd until a second phase of Pd//2Si is observed.",

author = "Nemanich, {R. J.} and Tsai, {C. C.} and Thompson, {M. J.} and Sigmon, {T. W.}",

year = "1981",

month = jan,

day = "1",

doi = "10.1116/1.571085",

language = "English (US)",

volume = "19",

pages = "685--688",

journal = "Journal of Vacuum Science and Technology",

issn = "0022-5355",

publisher = "American Institute of Physics Publising LLC",

number = "3",

note = "Proc of the Annu Conf on the Phys of Compd Semicond Interfaces, 8th ; Conference date: 27-01-1981 Through 29-01-1981",

}

TY - JOUR

T1 - INTERFERENCE ENHANCED RAMAN SCATTERING STUDY OF THE INTERFACIAL REACTION OF Pd ON a-Si:H.

AU - Nemanich, R. J.

AU - Tsai, C. C.

AU - Thompson, M. J.

AU - Sigmon, T. W.

PY - 1981/1/1

Y1 - 1981/1/1

N2 - The application of interference enhanced Raman scattering to probe the structure of metal/semiconductor interfaces is described. This method is used to study the interface structures of Pd on hydrogenated amorphous Si(a-Si:H) with particular attention to the effects of a native oxide layer on the a-Si:H. It is found that for deposition on lightly oxidized a-Si:H, approximately 20 A of Pd is consumed for form a crystalline silicide interfacial structure with composition near Pd//2Si. Annealing causes growth of this phase and further consumption of Pd until a second phase of Pd//2Si is observed.

AB - The application of interference enhanced Raman scattering to probe the structure of metal/semiconductor interfaces is described. This method is used to study the interface structures of Pd on hydrogenated amorphous Si(a-Si:H) with particular attention to the effects of a native oxide layer on the a-Si:H. It is found that for deposition on lightly oxidized a-Si:H, approximately 20 A of Pd is consumed for form a crystalline silicide interfacial structure with composition near Pd//2Si. Annealing causes growth of this phase and further consumption of Pd until a second phase of Pd//2Si is observed.

UR - http://www.scopus.com/inward/record.url?scp=0019610989&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0019610989&partnerID=8YFLogxK

U2 - 10.1116/1.571085

DO - 10.1116/1.571085

M3 - Conference article

AN - SCOPUS:0019610989

SN - 0022-5355

VL - 19

SP - 685

EP - 688

JO - Journal of Vacuum Science and Technology

JF - Journal of Vacuum Science and Technology

IS - 3

T2 - Proc of the Annu Conf on the Phys of Compd Semicond Interfaces, 8th

Y2 - 27 January 1981 through 29 January 1981

ER -

INTERFERENCE ENHANCED RAMAN SCATTERING STUDY OF THE INTERFACIAL REACTION OF Pd ON a-Si:H.

Abstract

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