INTERFERENCE ENHANCED RAMAN SCATTERING STUDY OF THE INTERFACIAL REACTION OF Pd ON a-Si:H.

R. J. Nemanich, C. C. Tsai, M. J. Thompson, T. W. Sigmon

Research output: Contribution to journalConference article

62 Scopus citations

Abstract

The application of interference enhanced Raman scattering to probe the structure of metal/semiconductor interfaces is described. This method is used to study the interface structures of Pd on hydrogenated amorphous Si(a-Si:H) with particular attention to the effects of a native oxide layer on the a-Si:H. It is found that for deposition on lightly oxidized a-Si:H, approximately 20 A of Pd is consumed for form a crystalline silicide interfacial structure with composition near Pd//2Si. Annealing causes growth of this phase and further consumption of Pd until a second phase of Pd//2Si is observed.

Original languageEnglish (US)
Pages (from-to)685-688
Number of pages4
JournalJournal of vacuum science & technology
Volume19
Issue number3
DOIs
StatePublished - Jan 1 1981
Externally publishedYes
EventProc of the Annu Conf on the Phys of Compd Semicond Interfaces, 8th - Williamsburg, VA, USA
Duration: Jan 27 1981Jan 29 1981

ASJC Scopus subject areas

  • Engineering(all)

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