The application of interference enhanced Raman scattering to probe the structure of metal/semiconductor interfaces is described. This method is used to study the interface structures of Pd on hydrogenated amorphous Si(a-Si:H) with particular attention to the effects of a native oxide layer on the a-Si:H. It is found that for deposition on lightly oxidized a-Si:H, approximately 20 A of Pd is consumed for form a crystalline silicide interfacial structure with composition near Pd//2Si. Annealing causes growth of this phase and further consumption of Pd until a second phase of Pd//2Si is observed.
|Original language||English (US)|
|Number of pages||4|
|Journal||Journal of vacuum science & technology|
|State||Published - Jan 1 1981|
|Event||Proc of the Annu Conf on the Phys of Compd Semicond Interfaces, 8th - Williamsburg, VA, USA|
Duration: Jan 27 1981 → Jan 29 1981
ASJC Scopus subject areas