Interference effects: A key to understanding forbidden Raman scattering by LO phonons in GaAs

José Menéndez; Manuel Cardona

doi:10.1103/PhysRevB.31.3696

Interference effects: A key to understanding forbidden Raman scattering by LO phonons in GaAs

José Menéndez, Manuel Cardona

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153 Scopus citations

Abstract

We show that the contributions of intrinsic and impurity-induced forbidden LO-phonon Raman scattering in GaAs can be quantitatively separated by investigating interference effects between allowed and forbidden LO-phonon scattering. We perform a new calculation of impurity-induced scattering and determine the resonance profile for GaAs near the E00 gap. Comparison with experiment shows that impurity-induced scattering plays a dominant role. Absolute values of the Raman efficiencies are estimated and compared with experiment.

Original language	English (US)
Pages (from-to)	3696-3704
Number of pages	9
Journal	Physical Review B
Volume	31
Issue number	6
DOIs	https://doi.org/10.1103/PhysRevB.31.3696
State	Published - 1985
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics

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10.1103/PhysRevB.31.3696

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title = "Interference effects: A key to understanding forbidden Raman scattering by LO phonons in GaAs",

abstract = "We show that the contributions of intrinsic and impurity-induced forbidden LO-phonon Raman scattering in GaAs can be quantitatively separated by investigating interference effects between allowed and forbidden LO-phonon scattering. We perform a new calculation of impurity-induced scattering and determine the resonance profile for GaAs near the E00 gap. Comparison with experiment shows that impurity-induced scattering plays a dominant role. Absolute values of the Raman efficiencies are estimated and compared with experiment.",

author = "Jos{\'e} Men{\'e}ndez and Manuel Cardona",

year = "1985",

doi = "10.1103/PhysRevB.31.3696",

language = "English (US)",

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AU - Cardona, Manuel

PY - 1985

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AB - We show that the contributions of intrinsic and impurity-induced forbidden LO-phonon Raman scattering in GaAs can be quantitatively separated by investigating interference effects between allowed and forbidden LO-phonon scattering. We perform a new calculation of impurity-induced scattering and determine the resonance profile for GaAs near the E00 gap. Comparison with experiment shows that impurity-induced scattering plays a dominant role. Absolute values of the Raman efficiencies are estimated and compared with experiment.

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DO - 10.1103/PhysRevB.31.3696

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JO - Physical Review B

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Interference effects: A key to understanding forbidden Raman scattering by LO phonons in GaAs

Abstract

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