Interference effects: A key to understanding forbidden Raman scattering by LO phonons in GaAs

José Menéndez, Manuel Cardona

Research output: Contribution to journalArticlepeer-review

148 Scopus citations

Abstract

We show that the contributions of intrinsic and impurity-induced forbidden LO-phonon Raman scattering in GaAs can be quantitatively separated by investigating interference effects between allowed and forbidden LO-phonon scattering. We perform a new calculation of impurity-induced scattering and determine the resonance profile for GaAs near the E00 gap. Comparison with experiment shows that impurity-induced scattering plays a dominant role. Absolute values of the Raman efficiencies are estimated and compared with experiment.

Original languageEnglish (US)
Pages (from-to)3696-3704
Number of pages9
JournalPhysical Review B
Volume31
Issue number6
DOIs
StatePublished - 1985
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics

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