Abstract
Measurements were made by X-ray diffraction of the in-situ growth of Pd2Si films on Si(111) at room temperature. Initially the growth is commensurate with lattice matching between the film and substrate, giving rise to a strained film. Above a critical thickness, the film relaxes to an unstrained state, but retains its epitaxial relationship. During both phases of growth, intensity oscillations are seen that correspond to the formation of an interfacial layer.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 498-504 |
| Number of pages | 7 |
| Journal | Applied Surface Science |
| Volume | 60-61 |
| Issue number | C |
| DOIs | |
| State | Published - 1992 |
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ASJC Scopus subject areas
- Physical and Theoretical Chemistry
- Surfaces, Coatings and Films
- Condensed Matter Physics
Cite this
Interfacial X-ray oscillations during growth of Pd2Si on Si(111). / Robinson, I. K.; Eng, P. J.; Bennett, Peter; DeVries, B.
In: Applied Surface Science, Vol. 60-61, No. C, 1992, p. 498-504.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Interfacial X-ray oscillations during growth of Pd2Si on Si(111)
AU - Robinson, I. K.
AU - Eng, P. J.
AU - Bennett, Peter
AU - DeVries, B.
PY - 1992
Y1 - 1992
N2 - Measurements were made by X-ray diffraction of the in-situ growth of Pd2Si films on Si(111) at room temperature. Initially the growth is commensurate with lattice matching between the film and substrate, giving rise to a strained film. Above a critical thickness, the film relaxes to an unstrained state, but retains its epitaxial relationship. During both phases of growth, intensity oscillations are seen that correspond to the formation of an interfacial layer.
AB - Measurements were made by X-ray diffraction of the in-situ growth of Pd2Si films on Si(111) at room temperature. Initially the growth is commensurate with lattice matching between the film and substrate, giving rise to a strained film. Above a critical thickness, the film relaxes to an unstrained state, but retains its epitaxial relationship. During both phases of growth, intensity oscillations are seen that correspond to the formation of an interfacial layer.
UR - http://www.scopus.com/inward/record.url?scp=0039961229&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0039961229&partnerID=8YFLogxK
U2 - 10.1016/0169-4332(92)90466-B
DO - 10.1016/0169-4332(92)90466-B
M3 - Article
AN - SCOPUS:0039961229
VL - 60-61
SP - 498
EP - 504
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
IS - C
ER -