Interfacial X-ray oscillations during growth of Pd2Si on Si(111)

I. K. Robinson; P. J. Eng; Peter Bennett; B. DeVries

doi:10.1016/0169-4332(92)90466-B

Interfacial X-ray oscillations during growth of Pd₂Si on Si(111)

I. K. Robinson, P. J. Eng, Peter Bennett, B. DeVries

CLAS-NS: Physics

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Measurements were made by X-ray diffraction of the in-situ growth of Pd₂Si films on Si(111) at room temperature. Initially the growth is commensurate with lattice matching between the film and substrate, giving rise to a strained film. Above a critical thickness, the film relaxes to an unstrained state, but retains its epitaxial relationship. During both phases of growth, intensity oscillations are seen that correspond to the formation of an interfacial layer.

Original language	English (US)
Pages (from-to)	498-504
Number of pages	7
Journal	Applied Surface Science
Volume	60-61
Issue number	C
DOIs	https://doi.org/10.1016/0169-4332(92)90466-B
State	Published - 1992

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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title = "Interfacial X-ray oscillations during growth of Pd2Si on Si(111)",

abstract = "Measurements were made by X-ray diffraction of the in-situ growth of Pd2Si films on Si(111) at room temperature. Initially the growth is commensurate with lattice matching between the film and substrate, giving rise to a strained film. Above a critical thickness, the film relaxes to an unstrained state, but retains its epitaxial relationship. During both phases of growth, intensity oscillations are seen that correspond to the formation of an interfacial layer.",

author = "Robinson, {I. K.} and Eng, {P. J.} and Peter Bennett and B. DeVries",

note = "Funding Information: WC have enjoyed discussions of this work with D. Eaglcsham. NSLS is supported by Ihc DOE under DE-ACI)2-76CH()0016. P.A.B. and B.d.V. bet.,fltted from a DOE Faculty and Student award. Partial support also came from NSF Copyright: Copyright 2014 Elsevier B.V., All rights reserved.",

year = "1992",

doi = "10.1016/0169-4332(92)90466-B",

language = "English (US)",

volume = "60-61",

pages = "498--504",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

number = "C",

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TY - JOUR

T1 - Interfacial X-ray oscillations during growth of Pd2Si on Si(111)

AU - Robinson, I. K.

AU - Eng, P. J.

AU - Bennett, Peter

AU - DeVries, B.

N1 - Funding Information: WC have enjoyed discussions of this work with D. Eaglcsham. NSLS is supported by Ihc DOE under DE-ACI)2-76CH()0016. P.A.B. and B.d.V. bet.,fltted from a DOE Faculty and Student award. Partial support also came from NSF Copyright: Copyright 2014 Elsevier B.V., All rights reserved.

PY - 1992

Y1 - 1992

N2 - Measurements were made by X-ray diffraction of the in-situ growth of Pd2Si films on Si(111) at room temperature. Initially the growth is commensurate with lattice matching between the film and substrate, giving rise to a strained film. Above a critical thickness, the film relaxes to an unstrained state, but retains its epitaxial relationship. During both phases of growth, intensity oscillations are seen that correspond to the formation of an interfacial layer.

AB - Measurements were made by X-ray diffraction of the in-situ growth of Pd2Si films on Si(111) at room temperature. Initially the growth is commensurate with lattice matching between the film and substrate, giving rise to a strained film. Above a critical thickness, the film relaxes to an unstrained state, but retains its epitaxial relationship. During both phases of growth, intensity oscillations are seen that correspond to the formation of an interfacial layer.

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