Interfacial X-ray oscillations during growth of Pd2Si on Si(111)

I. K. Robinson, P. J. Eng, Peter Bennett, B. DeVries

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Measurements were made by X-ray diffraction of the in-situ growth of Pd2Si films on Si(111) at room temperature. Initially the growth is commensurate with lattice matching between the film and substrate, giving rise to a strained film. Above a critical thickness, the film relaxes to an unstrained state, but retains its epitaxial relationship. During both phases of growth, intensity oscillations are seen that correspond to the formation of an interfacial layer.

Original languageEnglish (US)
Pages (from-to)498-504
Number of pages7
JournalApplied Surface Science
Volume60-61
Issue numberC
DOIs
StatePublished - 1992

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X rays
oscillations
x rays
X ray diffraction
room temperature
Substrates
diffraction
Temperature

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

Cite this

Interfacial X-ray oscillations during growth of Pd2Si on Si(111). / Robinson, I. K.; Eng, P. J.; Bennett, Peter; DeVries, B.

In: Applied Surface Science, Vol. 60-61, No. C, 1992, p. 498-504.

Research output: Contribution to journalArticle

Robinson, I. K. ; Eng, P. J. ; Bennett, Peter ; DeVries, B. / Interfacial X-ray oscillations during growth of Pd2Si on Si(111). In: Applied Surface Science. 1992 ; Vol. 60-61, No. C. pp. 498-504.
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