Interfacial reactions of copper/refractory alloy and bilayer films on SiO 2

R. L. Spreitzer, S. A. Rafalski, D. Adams, S. W. Russell, Z. Atzmon, J. Li, Terry Alford, J. W. Mayer

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

We studied interfacial phase formation between copper and copper-alloy films on SiO 2 in order to understand how to improve adhesion. CuCr and CuTi alloy and bilayer films on SiO 2 were annealed from 400-600°C for 30 min in an N 2 + H 2 (5%) ambient. The bilayer systems exhibited refractory metal migration from the interface to the surface where they oxidized. In the CuTi bilayer system, an oxidized interfacial Ti layer was observed. Both CuCr and CuTi alloy systems exhibited refractory metal segregation to the interface and surface. Rutherford backscattering spectrometry and Auger electron spectroscopy were used for elemental depth profiling.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages631-636
Number of pages6
Volume337
StatePublished - 1994
EventProceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 4 1994Apr 8 1994

Other

OtherProceedings of the 1994 MRS Spring Meeting
CitySan Francisco, CA, USA
Period4/4/944/8/94

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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