Abstract
We studied interfacial phase formation between copper and copper-alloy films on SiO 2 in order to understand how to improve adhesion. CuCr and CuTi alloy and bilayer films on SiO 2 were annealed from 400-600°C for 30 min in an N 2 + H 2 (5%) ambient. The bilayer systems exhibited refractory metal migration from the interface to the surface where they oxidized. In the CuTi bilayer system, an oxidized interfacial Ti layer was observed. Both CuCr and CuTi alloy systems exhibited refractory metal segregation to the interface and surface. Rutherford backscattering spectrometry and Auger electron spectroscopy were used for elemental depth profiling.
Original language | English (US) |
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Title of host publication | Materials Research Society Symposium - Proceedings |
Publisher | Materials Research Society |
Pages | 631-636 |
Number of pages | 6 |
Volume | 337 |
State | Published - 1994 |
Event | Proceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA Duration: Apr 4 1994 → Apr 8 1994 |
Other
Other | Proceedings of the 1994 MRS Spring Meeting |
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City | San Francisco, CA, USA |
Period | 4/4/94 → 4/8/94 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials