INTERFACIAL REACTIONS BETWEEN AU AND HYDROGENATED AMORPHOUSSI.

C. C. TSAI, R. J. NEMANICH, M. J. THOMPSON

Research output: Contribution to journalConference article

40 Scopus citations

Abstract

SOLID STATE REACTIONS AT THE INTERFACE BETWEEN THIN FILMS OF AU AND HYDROGENATED AMORPHOUS SI ARE PROBED BY INTERFERENCE ENHANCED RAMAN SCATTERING. SCATTERING, TEM, SCANNING AUGERMICROPROBE, AND SCHOTTKY ELECTRICAL MEASUREMENTS. IT IS FOUND THAT CRYSTALLINE SI ISLANDS WITH A DIMENSION OF APPROXIMATELY 1 ″MU″ M GROW DENDRITICALLY AFTER ANNEALING TO TEMPERATURES ABOVE 150 D. C. THE ISLANDS APPARENTLY GROW LATERALLY DUE TO DIFFUSION OF SI THROUGH AU. THIS FORMATION OF SI CRYSTALLITES OCCURS AT A TEMPERATURE MUCH LOWER THAN THE NORMAL CRYSTALLIZATION TEMPERATURE OF > 650 D. C FOR THE HYDROGENATED AMORPHOUS SI. THROUGH THIS PROCESS THE SCHOTTKY BARRIER ISNOT DESTROYED. A MODEL IS PROPOSED TO DESCRIBE THE FORMATION PROCESS, WHICH INCLUDES THE LOW-TEMPERATURE SI DIFFUSION INTO AU TO FORM A AU-SI INTERMIXED PHASE, AND THE AGGLOMERATION OF THE AU-RICH REGIONS.

Original languageEnglish (US)
Pages (from-to)632-636
Number of pages5
JournalJ VAC SCI TECHNOL
VolumeV 21
Issue numberN 2
StatePublished - Jan 1 1982
EventPROC OF THE ANNU CONF ON THE PHYS AND CHEM OF SEMICOND INTERFACES, 9TH - Pacific Grove, CA, USA
Duration: Jan 27 1982Jan 29 1982

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ASJC Scopus subject areas

  • Engineering(all)

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