INTERFACIAL REACTIONS BETWEEN AU AND HYDROGENATED AMORPHOUSSI.

C. C. TSAI; R. J. NEMANICH; M. J. THOMPSON

doi:10.1116/1.571802

INTERFACIAL REACTIONS BETWEEN AU AND HYDROGENATED AMORPHOUSSI.

C. C. TSAI, R. J. NEMANICH, M. J. THOMPSON

Research output: Contribution to journal › Conference article › peer-review

40 Scopus citations

Abstract

SOLID STATE REACTIONS AT THE INTERFACE BETWEEN THIN FILMS OF AU AND HYDROGENATED AMORPHOUS SI ARE PROBED BY INTERFERENCE ENHANCED RAMAN SCATTERING. SCATTERING, TEM, SCANNING AUGERMICROPROBE, AND SCHOTTKY ELECTRICAL MEASUREMENTS. IT IS FOUND THAT CRYSTALLINE SI ISLANDS WITH A DIMENSION OF APPROXIMATELY 1 ″MU″ M GROW DENDRITICALLY AFTER ANNEALING TO TEMPERATURES ABOVE 150 D. C. THE ISLANDS APPARENTLY GROW LATERALLY DUE TO DIFFUSION OF SI THROUGH AU. THIS FORMATION OF SI CRYSTALLITES OCCURS AT A TEMPERATURE MUCH LOWER THAN THE NORMAL CRYSTALLIZATION TEMPERATURE OF > 650 D. C FOR THE HYDROGENATED AMORPHOUS SI. THROUGH THIS PROCESS THE SCHOTTKY BARRIER ISNOT DESTROYED. A MODEL IS PROPOSED TO DESCRIBE THE FORMATION PROCESS, WHICH INCLUDES THE LOW-TEMPERATURE SI DIFFUSION INTO AU TO FORM A AU-SI INTERMIXED PHASE, AND THE AGGLOMERATION OF THE AU-RICH REGIONS.

Original language	English (US)
Pages (from-to)	632-636
Number of pages	5
Journal	J VAC SCI TECHNOL
Volume	V 21
Issue number	N 2
DOIs	https://doi.org/10.1116/1.571802
State	Published - 1982
Externally published	Yes
Event	PROC OF THE ANNU CONF ON THE PHYS AND CHEM OF SEMICOND INTERFACES, 9TH - Pacific Grove, CA, USA Duration: Jan 27 1982 → Jan 29 1982

ASJC Scopus subject areas

Engineering(all)

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10.1116/1.571802

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title = "INTERFACIAL REACTIONS BETWEEN AU AND HYDROGENATED AMORPHOUSSI.",

abstract = "SOLID STATE REACTIONS AT THE INTERFACE BETWEEN THIN FILMS OF AU AND HYDROGENATED AMORPHOUS SI ARE PROBED BY INTERFERENCE ENHANCED RAMAN SCATTERING. SCATTERING, TEM, SCANNING AUGERMICROPROBE, AND SCHOTTKY ELECTRICAL MEASUREMENTS. IT IS FOUND THAT CRYSTALLINE SI ISLANDS WITH A DIMENSION OF APPROXIMATELY 1 ″MU″ M GROW DENDRITICALLY AFTER ANNEALING TO TEMPERATURES ABOVE 150 D. C. THE ISLANDS APPARENTLY GROW LATERALLY DUE TO DIFFUSION OF SI THROUGH AU. THIS FORMATION OF SI CRYSTALLITES OCCURS AT A TEMPERATURE MUCH LOWER THAN THE NORMAL CRYSTALLIZATION TEMPERATURE OF > 650 D. C FOR THE HYDROGENATED AMORPHOUS SI. THROUGH THIS PROCESS THE SCHOTTKY BARRIER ISNOT DESTROYED. A MODEL IS PROPOSED TO DESCRIBE THE FORMATION PROCESS, WHICH INCLUDES THE LOW-TEMPERATURE SI DIFFUSION INTO AU TO FORM A AU-SI INTERMIXED PHASE, AND THE AGGLOMERATION OF THE AU-RICH REGIONS.",

author = "TSAI, {C. C.} and NEMANICH, {R. J.} and THOMPSON, {M. J.}",

year = "1982",

doi = "10.1116/1.571802",

language = "English (US)",

volume = "V 21",

pages = "632--636",

journal = "Journal of Vacuum Science and Technology",

issn = "0022-5355",

publisher = "American Institute of Physics Publising LLC",

number = "N 2",

note = "PROC OF THE ANNU CONF ON THE PHYS AND CHEM OF SEMICOND INTERFACES, 9TH ; Conference date: 27-01-1982 Through 29-01-1982",

}

TY - JOUR

T1 - INTERFACIAL REACTIONS BETWEEN AU AND HYDROGENATED AMORPHOUSSI.

AU - TSAI, C. C.

AU - NEMANICH, R. J.

AU - THOMPSON, M. J.

PY - 1982

Y1 - 1982

N2 - SOLID STATE REACTIONS AT THE INTERFACE BETWEEN THIN FILMS OF AU AND HYDROGENATED AMORPHOUS SI ARE PROBED BY INTERFERENCE ENHANCED RAMAN SCATTERING. SCATTERING, TEM, SCANNING AUGERMICROPROBE, AND SCHOTTKY ELECTRICAL MEASUREMENTS. IT IS FOUND THAT CRYSTALLINE SI ISLANDS WITH A DIMENSION OF APPROXIMATELY 1 ″MU″ M GROW DENDRITICALLY AFTER ANNEALING TO TEMPERATURES ABOVE 150 D. C. THE ISLANDS APPARENTLY GROW LATERALLY DUE TO DIFFUSION OF SI THROUGH AU. THIS FORMATION OF SI CRYSTALLITES OCCURS AT A TEMPERATURE MUCH LOWER THAN THE NORMAL CRYSTALLIZATION TEMPERATURE OF > 650 D. C FOR THE HYDROGENATED AMORPHOUS SI. THROUGH THIS PROCESS THE SCHOTTKY BARRIER ISNOT DESTROYED. A MODEL IS PROPOSED TO DESCRIBE THE FORMATION PROCESS, WHICH INCLUDES THE LOW-TEMPERATURE SI DIFFUSION INTO AU TO FORM A AU-SI INTERMIXED PHASE, AND THE AGGLOMERATION OF THE AU-RICH REGIONS.

AB - SOLID STATE REACTIONS AT THE INTERFACE BETWEEN THIN FILMS OF AU AND HYDROGENATED AMORPHOUS SI ARE PROBED BY INTERFERENCE ENHANCED RAMAN SCATTERING. SCATTERING, TEM, SCANNING AUGERMICROPROBE, AND SCHOTTKY ELECTRICAL MEASUREMENTS. IT IS FOUND THAT CRYSTALLINE SI ISLANDS WITH A DIMENSION OF APPROXIMATELY 1 ″MU″ M GROW DENDRITICALLY AFTER ANNEALING TO TEMPERATURES ABOVE 150 D. C. THE ISLANDS APPARENTLY GROW LATERALLY DUE TO DIFFUSION OF SI THROUGH AU. THIS FORMATION OF SI CRYSTALLITES OCCURS AT A TEMPERATURE MUCH LOWER THAN THE NORMAL CRYSTALLIZATION TEMPERATURE OF > 650 D. C FOR THE HYDROGENATED AMORPHOUS SI. THROUGH THIS PROCESS THE SCHOTTKY BARRIER ISNOT DESTROYED. A MODEL IS PROPOSED TO DESCRIBE THE FORMATION PROCESS, WHICH INCLUDES THE LOW-TEMPERATURE SI DIFFUSION INTO AU TO FORM A AU-SI INTERMIXED PHASE, AND THE AGGLOMERATION OF THE AU-RICH REGIONS.

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INTERFACIAL REACTIONS BETWEEN AU AND HYDROGENATED AMORPHOUSSI.

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