Interfacial nanochemistry and electrical properties of Pb(Zr 0.3Ti0.7)O3 films on GaN/sapphire

W. Cao, S. Bhaskar, Jian Li, Sandwip Dey

Research output: Contribution to journalArticlepeer-review

29 Scopus citations

Abstract

The structure, interfacial nanochemistry, and electrical properties of sol-gel derived Pb(Zr0.3Ti0.7)O3 or PZT (30 / 70) thin films on metal-organic chemical vapor deposited (0001) GaN/sapphire substrates are reported. The X-ray diffraction analysis confirmed a phase-pure and highly oriented (111) PZT and Rutherford backscattering spectroscopy was used to ascertain the Zr/Ti ratio. The secondary ion mass spectrometry depth profile and electron energy loss spectroscopy with high energy and spatial resolution indicated a chemically sharp PZT/GaN interface with insignificant interdiffusion between Pb, Zr, or Ti in PZT and Ga and N in GaN. The lower capacitance density (C / A = 0.35 μF/cm2) and asymmetrical polarization (P ∼ 4 μC/cm2) hysteresis loops of PZT in Pt/PZT/GaN or metal-ferroelectric-semiconductor configuration were attributed to the high depolarization field (Edepol) within PZT. In contrast, PZT in Pt/PZT/Ru/GaN or metal-ferroelectric-metal configuration exhibited high capacitance density (C / A = 1.25 μF/cm2) and polarization (P ∼ 30 μC/cm2).

Original languageEnglish (US)
Pages (from-to)154-159
Number of pages6
JournalThin Solid Films
Volume484
Issue number1-2
DOIs
StatePublished - Jul 22 2005

Keywords

  • EELS
  • GaN
  • Interfaces
  • Pb(Zr, Ti)O

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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