Interfacial intermixing and anti-phase boundaries in GaP/Si(0 0 1) heterostructures

Allison Boley, Esperanza Luna, C. Zhang, N. Faleev, C. B. Honsberg, David J. Smith

Research output: Contribution to journalArticlepeer-review

Abstract

Epitaxial GaP/Si heterostructures grown by molecular beam epitaxy (MBE) and migration-enhanced epitaxy (MEE) have been studied, primarily using aberration-corrected scanning transmission electron microscopy (AC-STEM). Atomically-resolved structure images, which are sensitive to atomic-column intensity revealed the detailed geometry of antiphase boundaries that were both parallel and also inclined to the growth direction. The polar/non-polar GaP/Si interfaces were neither atomically flat laterally nor abrupt vertically. Measurements of intensity profiles using both bright-field and dark-field AC-STEM images, as well as chemically-sensitive g002 dark-field imaging, indicated substantial interfacial intermixing, which increased significantly from ∼1.3 nm (MEE growth at 440 °C) to ∼2.1 nm (MBE growth at 600 °C). The finite interface width will impact theoretical predictions of charge imbalance and strong electric fields across the heterointerface.

Original languageEnglish (US)
Article number126059
JournalJournal of Crystal Growth
Volume562
DOIs
StatePublished - May 15 2021

Keywords

  • A1. Characterization
  • A1. Crystal structure
  • A3. Molecular beam epitaxy
  • B2. Semiconducting materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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