TY - JOUR
T1 - Interfacial intermixing and anti-phase boundaries in GaP/Si(0 0 1) heterostructures
AU - Boley, Allison
AU - Luna, Esperanza
AU - Zhang, C.
AU - Faleev, N.
AU - Honsberg, C. B.
AU - Smith, David J.
N1 - Publisher Copyright:
© 2021 Elsevier B.V.
PY - 2021/5/15
Y1 - 2021/5/15
N2 - Epitaxial GaP/Si heterostructures grown by molecular beam epitaxy (MBE) and migration-enhanced epitaxy (MEE) have been studied, primarily using aberration-corrected scanning transmission electron microscopy (AC-STEM). Atomically-resolved structure images, which are sensitive to atomic-column intensity revealed the detailed geometry of antiphase boundaries that were both parallel and also inclined to the growth direction. The polar/non-polar GaP/Si interfaces were neither atomically flat laterally nor abrupt vertically. Measurements of intensity profiles using both bright-field and dark-field AC-STEM images, as well as chemically-sensitive g002 dark-field imaging, indicated substantial interfacial intermixing, which increased significantly from ∼1.3 nm (MEE growth at 440 °C) to ∼2.1 nm (MBE growth at 600 °C). The finite interface width will impact theoretical predictions of charge imbalance and strong electric fields across the heterointerface.
AB - Epitaxial GaP/Si heterostructures grown by molecular beam epitaxy (MBE) and migration-enhanced epitaxy (MEE) have been studied, primarily using aberration-corrected scanning transmission electron microscopy (AC-STEM). Atomically-resolved structure images, which are sensitive to atomic-column intensity revealed the detailed geometry of antiphase boundaries that were both parallel and also inclined to the growth direction. The polar/non-polar GaP/Si interfaces were neither atomically flat laterally nor abrupt vertically. Measurements of intensity profiles using both bright-field and dark-field AC-STEM images, as well as chemically-sensitive g002 dark-field imaging, indicated substantial interfacial intermixing, which increased significantly from ∼1.3 nm (MEE growth at 440 °C) to ∼2.1 nm (MBE growth at 600 °C). The finite interface width will impact theoretical predictions of charge imbalance and strong electric fields across the heterointerface.
KW - A1. Characterization
KW - A1. Crystal structure
KW - A3. Molecular beam epitaxy
KW - B2. Semiconducting materials
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U2 - 10.1016/j.jcrysgro.2021.126059
DO - 10.1016/j.jcrysgro.2021.126059
M3 - Article
AN - SCOPUS:85102357720
SN - 0022-0248
VL - 562
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
M1 - 126059
ER -