Interface vibrational modes in GaAs-AlAs superlattices

A. K. Sood, Jose Menendez, M. Cardona, K. Ploog

Research output: Contribution to journalArticle

364 Citations (Scopus)

Abstract

We report the observation of interface phonons by Raman scattering from GaAs-AlAs superlattices. These modes have frequencies close to the optical phonons of bulk GaAs and AlAs and resonate strongly for laser energies near the confined exciton levels of the GaAs quantum wells. The results are analyzed in terms of an electrostatic continuum model. In the long-wavelength limit this theory predicts the phonons of the layered media proposed by Merlin et al.

Original languageEnglish (US)
Pages (from-to)2115-2118
Number of pages4
JournalPhysical Review Letters
Volume54
Issue number19
DOIs
StatePublished - 1985
Externally publishedYes

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superlattices
vibration mode
phonons
excitons
quantum wells
Raman spectra
electrostatics
continuums
wavelengths
lasers
energy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Interface vibrational modes in GaAs-AlAs superlattices. / Sood, A. K.; Menendez, Jose; Cardona, M.; Ploog, K.

In: Physical Review Letters, Vol. 54, No. 19, 1985, p. 2115-2118.

Research output: Contribution to journalArticle

Sood, A. K. ; Menendez, Jose ; Cardona, M. ; Ploog, K. / Interface vibrational modes in GaAs-AlAs superlattices. In: Physical Review Letters. 1985 ; Vol. 54, No. 19. pp. 2115-2118.
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