Interface structure in heteroepitaxial CdTe on GaAs(100)

F. A. Ponce, G. B. Anderson, J. M. Ballingall

Research output: Contribution to journalArticle

42 Scopus citations

Abstract

Thin CdTe films have been grown epitaxially on GaAs(100) by molecular beam epitaxy. In the temperature range between 250 and 300°C, growth can occur in both the (100) and (111) epitaxial orientations. Using high-resolution transmission electron microscopy, we have studied the interface structure of these two cases. In parallel epitaxy, CdTe(100)/GaAs(100), the interface is atomically abrupt and slightly undulated. The 14.6% mismatch is relieved by the presence of a two-dimensional dislocation network at the interface. The dislocations run along 〈110〉 directions along the interface, with a periodicity of 31 Å, and have Burger's vector of 21a0〈100〉. In the case of CdTe(111)/GaAs(100), the interface is atomically abrupt with steps at the interface and CdTe(112) parallel to GaAs(110). Along these directions the atomic interplanar spacings match to within 0.7%. Pits in the GaAs substrate are evident with different densities in both cases, and are believed to be associated with the substrate surface treatment.

Original languageEnglish (US)
Pages (from-to)564-570
Number of pages7
JournalSurface Science
Volume168
Issue number1-3
DOIs
StatePublished - Mar 3 1986
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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