Interface structure in heteroepitaxial CdTe on GaAs(100)

Fernando Ponce, G. B. Anderson, J. M. Ballingall

Research output: Contribution to journalArticle

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Abstract

Thin CdTe films have been grown epitaxially on GaAs(100) by molecular beam epitaxy. In the temperature range between 250 and 300°C, growth can occur in both the (100) and (111) epitaxial orientations. Using high-resolution transmission electron microscopy, we have studied the interface structure of these two cases. In parallel epitaxy, CdTe(100)/GaAs(100), the interface is atomically abrupt and slightly undulated. The 14.6% mismatch is relieved by the presence of a two-dimensional dislocation network at the interface. The dislocations run along 〈110〉 directions along the interface, with a periodicity of 31 Å, and have Burger's vector of 2 1a0〈100〉. In the case of CdTe(111)/GaAs(100), the interface is atomically abrupt with steps at the interface and CdTe(112) parallel to GaAs(110). Along these directions the atomic interplanar spacings match to within 0.7%. Pits in the GaAs substrate are evident with different densities in both cases, and are believed to be associated with the substrate surface treatment.

Original languageEnglish (US)
Pages (from-to)564-570
Number of pages7
JournalSurface Science
Volume168
Issue number1-3
DOIs
StatePublished - Mar 3 1986
Externally publishedYes

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Burgers vector
Substrates
High resolution transmission electron microscopy
Epitaxial growth
Molecular beam epitaxy
Surface treatment
Thin films
surface treatment
Temperature
epitaxy
gallium arsenide
periodic variations
molecular beam epitaxy
spacing
transmission electron microscopy
high resolution
thin films
Direction compound
temperature

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Interface structure in heteroepitaxial CdTe on GaAs(100). / Ponce, Fernando; Anderson, G. B.; Ballingall, J. M.

In: Surface Science, Vol. 168, No. 1-3, 03.03.1986, p. 564-570.

Research output: Contribution to journalArticle

Ponce, Fernando ; Anderson, G. B. ; Ballingall, J. M. / Interface structure in heteroepitaxial CdTe on GaAs(100). In: Surface Science. 1986 ; Vol. 168, No. 1-3. pp. 564-570.
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