Interface structure and Zn diffusion in the Cd Te/Zn Te/Si system grown by MBE

S. C Y Tsen, David Smith, Peter Crozier, S. Rujirawat, G. Brill, S. Sivananthan

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

Two CdTe/ZnTe/Si samples were grown on Si (211) and Si(111) substrates by molecular beam epitaxy for use as lattice-matched substrates for HgCdTe growth. An As precursor was used before growing ZnTe. In order to understand the interface structure, the Zn diffusion problem and any effect due to As passivation, high resolution bright-field images, dark-field images and energy-dispersive X-ray spectra were studied. Fourier-filtered images have revealed details of the atomic arrangements and the dislocation defects at the interface. Local lattice parameters such as (111) d-spacings at different distances from the interface were measured to determine the Zn concentration based on Vegard's law. The Zn concentration profiles were consistent with measurements from energy-dispersive X-ray spectroscopy. The As-passivated interface showed vacancy-type defects.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
Pages197-202
Number of pages6
Volume589
StatePublished - 2000

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Tsen, S. C. Y., Smith, D., Crozier, P., Rujirawat, S., Brill, G., & Sivananthan, S. (2000). Interface structure and Zn diffusion in the Cd Te/Zn Te/Si system grown by MBE. In Materials Research Society Symposium - Proceedings (Vol. 589, pp. 197-202)