Interface stability of Ti(Si
            1-yGe
            y)
            2 and Si
            1-xGe
            x alloys

D. B. Aldrich; F. M. D'Heurle; D. E. Sayers; Robert Nemanich

Interface stability of Ti(Si _1-yGe _y) ₂ and Si _1-xGe _x alloys

D. B. Aldrich, F. M. D'Heurle, D. E. Sayers, Robert Nemanich

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The stability of C54 Ti(Si _1-yGe _y) ₂ films in contact with Si _1-xGe _x substrates was investigated. The titanium germanosilicide films were formed from the Ti - Si _1-xGe _x solid phase metallization reaction. It was observed that Ti(Si _1-yGe _y) ₂ initially forms with the same germanium content as the Si _1-xGe _x substrate (i.e., y = x). Following the initial formation of TiM ₂ (M = Si _1-yGe _y), silicon and germanium from the substrate diffuse into the TiM ₂ layer, the composition of the TiM ₂ changes, and Si _1-zGe _z precipitates form along the TiM ₂ grain boundaries. The germanium content of the Ti(Si _1-yGe _y) ₂ decreases, and the Si _1-zGe _z precipitates are germanium rich such that y < x < z. This instability of the TiM ₂ film and the dynamics of the germanium segregation were examined using the Ti-Si-Ge ternary equilibrium diagram. The relevant region of the ternary diagram is the two phase domain limited by a Si-Ge solid solution and a TiSi ₂ - TiGe ₂ solid solution. In this study first approximation Ti(Si _1-yGe _y) ₂ -to- Si _1-xGe _x tie lines were calculated on the basis of classical thermodynamics. The tie line calculations indicate that for C54 Ti(Si _1-yGe _y) ₂ to be stable in contact with Si _1-xGe _x, the compositions of the two phases in equilibrium must be such that y < x. The specific compositions of the two phases in equilibrium depend on the temperature and the relative quantities of the two phases. The dynamic processes by which the Ti(Si _1-yGe _y) ₂/Si _1-xGe _x system progresses from the as-formed state (y - x) to the equilibrium state (y < x) can be predicted using the tie line calculations.

Original language	English (US)
Title of host publication	Materials Research Society Symposium - Proceedings
Publisher	Materials Research Society
Pages	21-26
Number of pages	6
Volume	402
State	Published - 1996
Externally published	Yes
Event	Proceedings of the 1995 MRS Fall Symposium - Boston, MA, USA Duration: Nov 27 1995 → Nov 30 1995

Other

Other	Proceedings of the 1995 MRS Fall Symposium
City	Boston, MA, USA
Period	11/27/95 → 11/30/95

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

Interface stability of Ti(Si _1-yGe _y) ₂ and Si _1-xGe _x alloys . / Aldrich, D. B.; D'Heurle, F. M.; Sayers, D. E. et al.
Materials Research Society Symposium - Proceedings. Vol. 402 Materials Research Society, 1996. p. 21-26.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

@inproceedings{d7b715059b8c4a51947bf3d45a62632e,

title = "Interface stability of Ti(Si 1-yGe y) 2 and Si 1-xGe x alloys ",

abstract = "The stability of C54 Ti(Si 1-yGe y) 2 films in contact with Si 1-xGe x substrates was investigated. The titanium germanosilicide films were formed from the Ti - Si 1-xGe x solid phase metallization reaction. It was observed that Ti(Si 1-yGe y) 2 initially forms with the same germanium content as the Si 1-xGe x substrate (i.e., y = x). Following the initial formation of TiM 2 (M = Si 1-yGe y), silicon and germanium from the substrate diffuse into the TiM 2 layer, the composition of the TiM 2 changes, and Si 1-zGe z precipitates form along the TiM 2 grain boundaries. The germanium content of the Ti(Si 1-yGe y) 2 decreases, and the Si 1-zGe z precipitates are germanium rich such that y < x < z. This instability of the TiM 2 film and the dynamics of the germanium segregation were examined using the Ti-Si-Ge ternary equilibrium diagram. The relevant region of the ternary diagram is the two phase domain limited by a Si-Ge solid solution and a TiSi 2 - TiGe 2 solid solution. In this study first approximation Ti(Si 1-yGe y) 2 -to- Si 1-xGe x tie lines were calculated on the basis of classical thermodynamics. The tie line calculations indicate that for C54 Ti(Si 1-yGe y) 2 to be stable in contact with Si 1-xGe x, the compositions of the two phases in equilibrium must be such that y < x. The specific compositions of the two phases in equilibrium depend on the temperature and the relative quantities of the two phases. The dynamic processes by which the Ti(Si 1-yGe y) 2/Si 1-xGe x system progresses from the as-formed state (y - x) to the equilibrium state (y < x) can be predicted using the tie line calculations. ",

author = "Aldrich, {D. B.} and D'Heurle, {F. M.} and Sayers, {D. E.} and Robert Nemanich",

year = "1996",

language = "English (US)",

volume = "402",

pages = "21--26",

booktitle = "Materials Research Society Symposium - Proceedings",

publisher = "Materials Research Society",

note = "Proceedings of the 1995 MRS Fall Symposium ; Conference date: 27-11-1995 Through 30-11-1995",

}

TY - GEN

T1 - Interface stability of Ti(Si 1-yGe y) 2 and Si 1-xGe x alloys

AU - Aldrich, D. B.

AU - D'Heurle, F. M.

AU - Sayers, D. E.

AU - Nemanich, Robert

PY - 1996

Y1 - 1996

N2 - The stability of C54 Ti(Si 1-yGe y) 2 films in contact with Si 1-xGe x substrates was investigated. The titanium germanosilicide films were formed from the Ti - Si 1-xGe x solid phase metallization reaction. It was observed that Ti(Si 1-yGe y) 2 initially forms with the same germanium content as the Si 1-xGe x substrate (i.e., y = x). Following the initial formation of TiM 2 (M = Si 1-yGe y), silicon and germanium from the substrate diffuse into the TiM 2 layer, the composition of the TiM 2 changes, and Si 1-zGe z precipitates form along the TiM 2 grain boundaries. The germanium content of the Ti(Si 1-yGe y) 2 decreases, and the Si 1-zGe z precipitates are germanium rich such that y < x < z. This instability of the TiM 2 film and the dynamics of the germanium segregation were examined using the Ti-Si-Ge ternary equilibrium diagram. The relevant region of the ternary diagram is the two phase domain limited by a Si-Ge solid solution and a TiSi 2 - TiGe 2 solid solution. In this study first approximation Ti(Si 1-yGe y) 2 -to- Si 1-xGe x tie lines were calculated on the basis of classical thermodynamics. The tie line calculations indicate that for C54 Ti(Si 1-yGe y) 2 to be stable in contact with Si 1-xGe x, the compositions of the two phases in equilibrium must be such that y < x. The specific compositions of the two phases in equilibrium depend on the temperature and the relative quantities of the two phases. The dynamic processes by which the Ti(Si 1-yGe y) 2/Si 1-xGe x system progresses from the as-formed state (y - x) to the equilibrium state (y < x) can be predicted using the tie line calculations.

AB - The stability of C54 Ti(Si 1-yGe y) 2 films in contact with Si 1-xGe x substrates was investigated. The titanium germanosilicide films were formed from the Ti - Si 1-xGe x solid phase metallization reaction. It was observed that Ti(Si 1-yGe y) 2 initially forms with the same germanium content as the Si 1-xGe x substrate (i.e., y = x). Following the initial formation of TiM 2 (M = Si 1-yGe y), silicon and germanium from the substrate diffuse into the TiM 2 layer, the composition of the TiM 2 changes, and Si 1-zGe z precipitates form along the TiM 2 grain boundaries. The germanium content of the Ti(Si 1-yGe y) 2 decreases, and the Si 1-zGe z precipitates are germanium rich such that y < x < z. This instability of the TiM 2 film and the dynamics of the germanium segregation were examined using the Ti-Si-Ge ternary equilibrium diagram. The relevant region of the ternary diagram is the two phase domain limited by a Si-Ge solid solution and a TiSi 2 - TiGe 2 solid solution. In this study first approximation Ti(Si 1-yGe y) 2 -to- Si 1-xGe x tie lines were calculated on the basis of classical thermodynamics. The tie line calculations indicate that for C54 Ti(Si 1-yGe y) 2 to be stable in contact with Si 1-xGe x, the compositions of the two phases in equilibrium must be such that y < x. The specific compositions of the two phases in equilibrium depend on the temperature and the relative quantities of the two phases. The dynamic processes by which the Ti(Si 1-yGe y) 2/Si 1-xGe x system progresses from the as-formed state (y - x) to the equilibrium state (y < x) can be predicted using the tie line calculations.

UR - http://www.scopus.com/inward/record.url?scp=0029772468&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029772468&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0029772468

VL - 402

SP - 21

EP - 26

BT - Materials Research Society Symposium - Proceedings

PB - Materials Research Society

T2 - Proceedings of the 1995 MRS Fall Symposium

Y2 - 27 November 1995 through 30 November 1995

ER -

Interface stability of Ti(Si _1-yGe _y) ₂ and Si _1-xGe _x alloys

Abstract

Other

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this