INTERFACE PROPERTIES OF n-ZnSe-p-Ge HETEROJUNCTIONS GROWN BY ORGANOMETALLIC CHEMICAL VAPOR DEPOSITION.

J. G. Werthen; W. Stutius; F. A. Ponce

doi:10.1116/1.582572

INTERFACE PROPERTIES OF n-ZnSe-p-Ge HETEROJUNCTIONS GROWN BY ORGANOMETALLIC CHEMICAL VAPOR DEPOSITION.

J. G. Werthen, W. Stutius, F. A. Ponce

Research output: Contribution to journal › Conference article › peer-review

13 Scopus citations

Abstract

Aluminum-doped, n-type ZnSe layers ranging in thickness from several thousand Angstroms to several microns were grown epitaxially on differently oriented p-type Ge substrates by a low temperature, low pressure organometallic chemical vapor deposition process. The surface morphology and photoluminescence spectra reveal differences between the ZnSe films grown on (100)Ge substrates and those grown on (111)Ge substrates. Photoluminescence spectra of the former films show strong band gap luminescence, whereas the latter films are characterized by a reduced band gap luminescence intensity and an enhanced intensity in the self-activated region.

Original language	English (US)
Pages (from-to)	656-660
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	1
Issue number	3
DOIs	https://doi.org/10.1116/1.582572
State	Published - Jan 1 1983
Externally published	Yes
Event	Proc of the Annu Conf on the Phys and Chem of Semicond Interfaces, 10th - Santa Fe, NM, USA Duration: Jan 25 1983 → Jan 27 1983

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.582572

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title = "INTERFACE PROPERTIES OF n-ZnSe-p-Ge HETEROJUNCTIONS GROWN BY ORGANOMETALLIC CHEMICAL VAPOR DEPOSITION.",

abstract = "Aluminum-doped, n-type ZnSe layers ranging in thickness from several thousand Angstroms to several microns were grown epitaxially on differently oriented p-type Ge substrates by a low temperature, low pressure organometallic chemical vapor deposition process. The surface morphology and photoluminescence spectra reveal differences between the ZnSe films grown on (100)Ge substrates and those grown on (111)Ge substrates. Photoluminescence spectra of the former films show strong band gap luminescence, whereas the latter films are characterized by a reduced band gap luminescence intensity and an enhanced intensity in the self-activated region.",

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AU - Werthen, J. G.

AU - Stutius, W.

AU - Ponce, F. A.

PY - 1983/1/1

Y1 - 1983/1/1

N2 - Aluminum-doped, n-type ZnSe layers ranging in thickness from several thousand Angstroms to several microns were grown epitaxially on differently oriented p-type Ge substrates by a low temperature, low pressure organometallic chemical vapor deposition process. The surface morphology and photoluminescence spectra reveal differences between the ZnSe films grown on (100)Ge substrates and those grown on (111)Ge substrates. Photoluminescence spectra of the former films show strong band gap luminescence, whereas the latter films are characterized by a reduced band gap luminescence intensity and an enhanced intensity in the self-activated region.

AB - Aluminum-doped, n-type ZnSe layers ranging in thickness from several thousand Angstroms to several microns were grown epitaxially on differently oriented p-type Ge substrates by a low temperature, low pressure organometallic chemical vapor deposition process. The surface morphology and photoluminescence spectra reveal differences between the ZnSe films grown on (100)Ge substrates and those grown on (111)Ge substrates. Photoluminescence spectra of the former films show strong band gap luminescence, whereas the latter films are characterized by a reduced band gap luminescence intensity and an enhanced intensity in the self-activated region.

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INTERFACE PROPERTIES OF n-ZnSe-p-Ge HETEROJUNCTIONS GROWN BY ORGANOMETALLIC CHEMICAL VAPOR DEPOSITION.

Abstract

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