INTERFACE PROPERTIES OF n-ZnSe-p-Ge HETEROJUNCTIONS GROWN BY ORGANOMETALLIC CHEMICAL VAPOR DEPOSITION.

J. G. Werthen, W. Stutius, F. A. Ponce

Research output: Contribution to journalConference articlepeer-review

13 Scopus citations

Abstract

Aluminum-doped, n-type ZnSe layers ranging in thickness from several thousand Angstroms to several microns were grown epitaxially on differently oriented p-type Ge substrates by a low temperature, low pressure organometallic chemical vapor deposition process. The surface morphology and photoluminescence spectra reveal differences between the ZnSe films grown on (100)Ge substrates and those grown on (111)Ge substrates. Photoluminescence spectra of the former films show strong band gap luminescence, whereas the latter films are characterized by a reduced band gap luminescence intensity and an enhanced intensity in the self-activated region.

Original languageEnglish (US)
Pages (from-to)656-660
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume1
Issue number3
DOIs
StatePublished - Jan 1 1983
Externally publishedYes
EventProc of the Annu Conf on the Phys and Chem of Semicond Interfaces, 10th - Santa Fe, NM, USA
Duration: Jan 25 1983Jan 27 1983

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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