Interface orbital engineering of large-gap topological states: Decorating gold on a Si(111) surface

Bing Huang, Kyung Hwan Jin, Houlong Zhuang, Lizhi Zhang, Feng Liu

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Intensive effort has recently been made in search of topological insulators (TIs) that have great potential in spintronics applications. In this paper, a novel concept of overlayer induced interfacial TI phase in conventional semiconductor surface is proposed. The first-principles calculations demonstrate that a p-band-element X (X=In, Bi, and Pb) decorated d-band surface, such as Au/Si(111) surface [X/Au/Si(111)] of an existing experimental system, offers a promising prototype for TIs. Specifically, Bi/Au/Si(111) and Pb/Au/Si(111) are identified to be large-gap TIs. A p-d band inversion mechanism induced by growth of X in the Au/Si(111) surface is revealed to function at different coverage of X with different lattice symmetries, suggesting a general approach of interface orbital engineering of large-gap TIs via tuning the interfacial atomic orbital position of X relative to Au.

Original languageEnglish (US)
Article number115117
JournalPhysical Review B
Volume93
Issue number11
DOIs
StatePublished - Mar 9 2016
Externally publishedYes

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Gold
insulators
engineering
gold
orbitals
Magnetoelectronics
Tuning
Semiconductor materials
tuning
prototypes
inversions
symmetry

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Interface orbital engineering of large-gap topological states : Decorating gold on a Si(111) surface. / Huang, Bing; Jin, Kyung Hwan; Zhuang, Houlong; Zhang, Lizhi; Liu, Feng.

In: Physical Review B, Vol. 93, No. 11, 115117, 09.03.2016.

Research output: Contribution to journalArticle

Huang, Bing ; Jin, Kyung Hwan ; Zhuang, Houlong ; Zhang, Lizhi ; Liu, Feng. / Interface orbital engineering of large-gap topological states : Decorating gold on a Si(111) surface. In: Physical Review B. 2016 ; Vol. 93, No. 11.
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