The structural interactions at the interface of Cr, Ni, Pd on doped and undoped a-Si:H are measured using interference enhanced Raman scattering. The electrical properties of the barriers are probed by J-V and internal photoemission. After atomic interactions occur the J-V characteristics become nearly ideal while the internal photoemission signal increases but shows no change in barrier height.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry