Interface kinetics at metal contacts on a-Si:H

R. J. Nemanich, M. J. Thompson, Warren B. Jackson, C. C. Tsai, B. L. Stafford

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

The structural interactions at the interface of Cr, Ni, Pd on doped and undoped a-Si:H are measured using interference enhanced Raman scattering. The electrical properties of the barriers are probed by J-V and internal photoemission. After atomic interactions occur the J-V characteristics become nearly ideal while the internal photoemission signal increases but shows no change in barrier height.

Original languageEnglish (US)
Pages (from-to)513-516
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume59-60
Issue numberPART 1
DOIs
StatePublished - Dec 1983
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Interface kinetics at metal contacts on a-Si:H'. Together they form a unique fingerprint.

Cite this