Interface kinetics at metal contacts on a-Si:H

R. J. Nemanich, M. J. Thompson, Warren B. Jackson, C. C. Tsai, B. L. Stafford

Research output: Contribution to journalArticle

19 Scopus citations


The structural interactions at the interface of Cr, Ni, Pd on doped and undoped a-Si:H are measured using interference enhanced Raman scattering. The electrical properties of the barriers are probed by J-V and internal photoemission. After atomic interactions occur the J-V characteristics become nearly ideal while the internal photoemission signal increases but shows no change in barrier height.

Original languageEnglish (US)
Pages (from-to)513-516
Number of pages4
JournalJournal of Non-Crystalline Solids
Issue numberPART 1
StatePublished - Dec 1983
Externally publishedYes


ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Nemanich, R. J., Thompson, M. J., Jackson, W. B., Tsai, C. C., & Stafford, B. L. (1983). Interface kinetics at metal contacts on a-Si:H. Journal of Non-Crystalline Solids, 59-60(PART 1), 513-516.