Abstract
The structural interactions at the interface of Cr, Ni, Pd on doped and undoped a-Si:H are measured using interference enhanced Raman scattering. The electrical properties of the barriers are probed by J-V and internal photoemission. After atomic interactions occur the J-V characteristics become nearly ideal while the internal photoemission signal increases but shows no change in barrier height.
Original language | English (US) |
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Pages (from-to) | 513-516 |
Number of pages | 4 |
Journal | Journal of Non-Crystalline Solids |
Volume | 59-60 |
Issue number | PART 1 |
DOIs | |
State | Published - Dec 1983 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry