Abstract
The interface stability of Zr-based high-k dielectrics with an oxide buffer layer was studied using x-ray and ultraviolet photoemission spectroscopy. The Zirconium oxide films were characterized in situ in a stepwise sequence in order to explore their chemical stability and electronic properties as a function of film thickness and processing conditions. The buffer layers were found to serve to lower the interface state density and to address the high temperature instabilities of ZrO 2 in direct contact with Si. It was proposed that the As grown films contain excess oxygen resulting in a charge transfer from the Si substrate to the internal (ZrO 2SiO 2) interface.
Original language | English (US) |
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Pages (from-to) | 2665-2673 |
Number of pages | 9 |
Journal | Journal of Applied Physics |
Volume | 96 |
Issue number | 5 |
DOIs | |
State | Published - Sep 1 2004 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy(all)