Interface instabilities and electronic properties of ZrO 2 on silicon (100)

C. C. Fulton, T. E. Cook, G. Lucovsky, Robert Nemanich

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

The interface stability of Zr-based high-k dielectrics with an oxide buffer layer was studied using x-ray and ultraviolet photoemission spectroscopy. The Zirconium oxide films were characterized in situ in a stepwise sequence in order to explore their chemical stability and electronic properties as a function of film thickness and processing conditions. The buffer layers were found to serve to lower the interface state density and to address the high temperature instabilities of ZrO 2 in direct contact with Si. It was proposed that the As grown films contain excess oxygen resulting in a charge transfer from the Si substrate to the internal (ZrO 2SiO 2) interface.

Original languageEnglish (US)
Pages (from-to)2665-2673
Number of pages9
JournalJournal of Applied Physics
Volume96
Issue number5
DOIs
StatePublished - Sep 1 2004
Externally publishedYes

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buffers
interface stability
silicon
electronics
zirconium oxides
oxide films
film thickness
photoelectric emission
charge transfer
oxides
oxygen
spectroscopy
x rays

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Interface instabilities and electronic properties of ZrO 2 on silicon (100). / Fulton, C. C.; Cook, T. E.; Lucovsky, G.; Nemanich, Robert.

In: Journal of Applied Physics, Vol. 96, No. 5, 01.09.2004, p. 2665-2673.

Research output: Contribution to journalArticle

Fulton, C. C. ; Cook, T. E. ; Lucovsky, G. ; Nemanich, Robert. / Interface instabilities and electronic properties of ZrO 2 on silicon (100). In: Journal of Applied Physics. 2004 ; Vol. 96, No. 5. pp. 2665-2673.
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