Abstract
The interface stability of Zr-based high-k dielectrics with an oxide buffer layer was studied using x-ray and ultraviolet photoemission spectroscopy. The Zirconium oxide films were characterized in situ in a stepwise sequence in order to explore their chemical stability and electronic properties as a function of film thickness and processing conditions. The buffer layers were found to serve to lower the interface state density and to address the high temperature instabilities of ZrO 2 in direct contact with Si. It was proposed that the As grown films contain excess oxygen resulting in a charge transfer from the Si substrate to the internal (ZrO 2SiO 2) interface.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 2665-2673 |
| Number of pages | 9 |
| Journal | Journal of Applied Physics |
| Volume | 96 |
| Issue number | 5 |
| DOIs | |
| State | Published - Sep 1 2004 |
| Externally published | Yes |
Fingerprint
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)
Cite this
Interface instabilities and electronic properties of ZrO 2 on silicon (100). / Fulton, C. C.; Cook, T. E.; Lucovsky, G.; Nemanich, Robert.
In: Journal of Applied Physics, Vol. 96, No. 5, 01.09.2004, p. 2665-2673.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Interface instabilities and electronic properties of ZrO 2 on silicon (100)
AU - Fulton, C. C.
AU - Cook, T. E.
AU - Lucovsky, G.
AU - Nemanich, Robert
PY - 2004/9/1
Y1 - 2004/9/1
N2 - The interface stability of Zr-based high-k dielectrics with an oxide buffer layer was studied using x-ray and ultraviolet photoemission spectroscopy. The Zirconium oxide films were characterized in situ in a stepwise sequence in order to explore their chemical stability and electronic properties as a function of film thickness and processing conditions. The buffer layers were found to serve to lower the interface state density and to address the high temperature instabilities of ZrO 2 in direct contact with Si. It was proposed that the As grown films contain excess oxygen resulting in a charge transfer from the Si substrate to the internal (ZrO 2SiO 2) interface.
AB - The interface stability of Zr-based high-k dielectrics with an oxide buffer layer was studied using x-ray and ultraviolet photoemission spectroscopy. The Zirconium oxide films were characterized in situ in a stepwise sequence in order to explore their chemical stability and electronic properties as a function of film thickness and processing conditions. The buffer layers were found to serve to lower the interface state density and to address the high temperature instabilities of ZrO 2 in direct contact with Si. It was proposed that the As grown films contain excess oxygen resulting in a charge transfer from the Si substrate to the internal (ZrO 2SiO 2) interface.
UR - http://www.scopus.com/inward/record.url?scp=4944219625&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=4944219625&partnerID=8YFLogxK
U2 - 10.1063/1.1776313
DO - 10.1063/1.1776313
M3 - Article
AN - SCOPUS:4944219625
VL - 96
SP - 2665
EP - 2673
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 5
ER -