Interface engineered wetting-layer-free InAs quantum dots on GaAs(001)

Manori V. Gunasekera, Dinghao Tang, Irene Rusakova, David Smith, Alexandre Freundlich

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Self-assembled quantum dots (QD) are nucleated by the strain induced at the wetting layer; which highly influences electrical, optical, and physical properties in PV applications. Isolating electronically QDs from their wetting layer (WL) for better performance and structural improvement is the aim of this work. Accordingly, we fabricate wetting layer free QDs by inserting an intermediate layer of GaAs(AlAs) in between the wetting layer and the dot layer by manipulating the strain accumulated in the WL. The structural and morphological characterizations were carried out using scanning transmission electron microscopy and atomic force microscopy. These analyses show that their novel strategy leads to significant improvement of dot structural characteristics as attested by the higher dot height/base aspect-ratio and by the presence of more evenly distributed and more symmetric dots. Finally optical properties were investigated by photoluminescence spectroscopy and show that the strategy results in enhanced luminescence efficiency and shaper emission line widths.

Original languageEnglish (US)
Title of host publication2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479979448
DOIs
StatePublished - Dec 14 2015
Event42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States
Duration: Jun 14 2015Jun 19 2015

Other

Other42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
CountryUnited States
CityNew Orleans
Period6/14/156/19/15

Fingerprint

Semiconductor quantum dots
Wetting
Optical properties
Photoluminescence spectroscopy
Linewidth
Luminescence
Aspect ratio
Atomic force microscopy
Electric properties
Physical properties
gallium arsenide
indium arsenide
Transmission electron microscopy
Scanning electron microscopy

Keywords

  • aspect-ratio
  • photoluminescence
  • quantum dots
  • strain

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Gunasekera, M. V., Tang, D., Rusakova, I., Smith, D., & Freundlich, A. (2015). Interface engineered wetting-layer-free InAs quantum dots on GaAs(001). In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 [7355924] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2015.7355924

Interface engineered wetting-layer-free InAs quantum dots on GaAs(001). / Gunasekera, Manori V.; Tang, Dinghao; Rusakova, Irene; Smith, David; Freundlich, Alexandre.

2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7355924.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Gunasekera, MV, Tang, D, Rusakova, I, Smith, D & Freundlich, A 2015, Interface engineered wetting-layer-free InAs quantum dots on GaAs(001). in 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015., 7355924, Institute of Electrical and Electronics Engineers Inc., 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015, New Orleans, United States, 6/14/15. https://doi.org/10.1109/PVSC.2015.7355924
Gunasekera MV, Tang D, Rusakova I, Smith D, Freundlich A. Interface engineered wetting-layer-free InAs quantum dots on GaAs(001). In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7355924 https://doi.org/10.1109/PVSC.2015.7355924
Gunasekera, Manori V. ; Tang, Dinghao ; Rusakova, Irene ; Smith, David ; Freundlich, Alexandre. / Interface engineered wetting-layer-free InAs quantum dots on GaAs(001). 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc., 2015.
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