The interface between a thermally grown silicon dioxide and a vapor epitaxial layer of cubic silicon carbide has been investigated. Initial studies have concentrated on an Auger analysis of the interface region. The interface region is considerably wider for the unannealed oxide than that between Si and Si0//2. The Si KLL peak shift occurs over a region of some 130 A, while the compositional profile indicates a transition region about 210 A wide. No buildup of free carbon is found at the interface. The Si KLL peak changes indicate that the interface is composed primarily of Si0//2 and SiC. The cause of the wide interface is discussed in terms of the reaction products of carbon.
|Original language||English (US)|
|Title of host publication||J Vac Sci Technol|
|Number of pages||4|
|Publication status||Published - Jul 1978|
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