Interface atomic arrangement between the nitride semiconductor and silicon

R. Liu, Fernando Ponce, A. Dadgar, A. Krost

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

GaN epilayers were grown by MOVPE using a low temperature AlN nucleation layer. The substrate temperatures for the deposition of the nucleation layer and the main layer are about 720°C and 1145°C respectively. Cross-section TEM used to observe the image of GaN epilayer on silicon substrates. These GaN epilayers exhibit a specular surface, suggesting a two-dimensional growth mode. The observed microstructure shows the threading dislocation density is ∼1×1010cm-2. The lattice mismatch is found to be relieved by a periodic array of misfit dislocations.

Original languageEnglish (US)
Title of host publicationIEEE International Symposium on Compound Semiconductors, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages85-86
Number of pages2
Volume2003-January
ISBN (Print)0780378202
DOIs
StatePublished - 2003
Event2003 International Symposium on Compound Semiconductors, ISCS 2003 - San Diego, United States
Duration: Aug 25 2003Aug 27 2003

Other

Other2003 International Symposium on Compound Semiconductors, ISCS 2003
CountryUnited States
CitySan Diego
Period8/25/038/27/03

Keywords

  • Astronomy
  • Epitaxial growth
  • Epitaxial layers
  • Gallium nitride
  • Lattices
  • Physics
  • Silicon
  • Substrates
  • Temperature
  • Transmission electron microscopy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Liu, R., Ponce, F., Dadgar, A., & Krost, A. (2003). Interface atomic arrangement between the nitride semiconductor and silicon. In IEEE International Symposium on Compound Semiconductors, Proceedings (Vol. 2003-January, pp. 85-86). [1239917] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCS.2003.1239917