@inproceedings{b3315592f8864df49cecde5f6bdf7f58,
title = "Interface atomic arrangement between the nitride semiconductor and silicon",
abstract = "GaN epilayers were grown by MOVPE using a low temperature AlN nucleation layer. The substrate temperatures for the deposition of the nucleation layer and the main layer are about 720°C and 1145°C respectively. Cross-section TEM used to observe the image of GaN epilayer on silicon substrates. These GaN epilayers exhibit a specular surface, suggesting a two-dimensional growth mode. The observed microstructure shows the threading dislocation density is ∼1×1010cm-2. The lattice mismatch is found to be relieved by a periodic array of misfit dislocations.",
keywords = "Astronomy, Epitaxial growth, Epitaxial layers, Gallium nitride, Lattices, Physics, Silicon, Substrates, Temperature, Transmission electron microscopy",
author = "R. Liu and Fernando Ponce and A. Dadgar and A. Krost",
note = "Publisher Copyright: {\textcopyright} 2003 IEEE.; 2003 International Symposium on Compound Semiconductors, ISCS 2003 ; Conference date: 25-08-2003 Through 27-08-2003",
year = "2003",
doi = "10.1109/ISCS.2003.1239917",
language = "English (US)",
series = "IEEE International Symposium on Compound Semiconductors, Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "85--86",
booktitle = "2003 International Symposium on Compound Semiconductors, ISCS 2003",
}