Interdigitated back contact silicon heterojunction solar cell and the effect of front surface passivation

Meijun Lu; Stuart Bowden; Ujjwal Das; Robert Birkmire

doi:10.1063/1.2768635

Interdigitated back contact silicon heterojunction solar cell and the effect of front surface passivation

Meijun Lu, Stuart Bowden, Ujjwal Das, Robert Birkmire

Research output: Contribution to journal › Article › peer-review

126 Scopus citations

Abstract

This letter reports interdigitated back contact silicon heterojunction (IBC-SHJ) solar cells which combine the performance benefits of both back contact and heterojunction technologies while reducing their limitations. Low temperature (<200 °C) deposited p - and n -type amorphous silicon used to form interdigitated heteroemitter and contacts in the rear preserves substrate lifetime while minimizes optical losses in the front. The IBC-SHJ structure is ideal for diagnosing surface passivation quality, which is analyzed and measured by internal quantum efficiency and minority carrier lifetime measurements. Initial cells have independently confirmed efficiency of 11.8% under AM1.5 illumination. Simulations indicate efficiencies greater than 20% after optimization.

Original language	English (US)
Article number	063507
Journal	Applied Physics Letters
Volume	91
Issue number	6
DOIs	https://doi.org/10.1063/1.2768635
State	Published - 2007
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "This letter reports interdigitated back contact silicon heterojunction (IBC-SHJ) solar cells which combine the performance benefits of both back contact and heterojunction technologies while reducing their limitations. Low temperature (<200 °C) deposited p - and n -type amorphous silicon used to form interdigitated heteroemitter and contacts in the rear preserves substrate lifetime while minimizes optical losses in the front. The IBC-SHJ structure is ideal for diagnosing surface passivation quality, which is analyzed and measured by internal quantum efficiency and minority carrier lifetime measurements. Initial cells have independently confirmed efficiency of 11.8% under AM1.5 illumination. Simulations indicate efficiencies greater than 20% after optimization.",

author = "Meijun Lu and Stuart Bowden and Ujjwal Das and Robert Birkmire",

note = "Funding Information: The authors would like to thank Kevin Hart and Shannon Fields for film depositions and Steven Hegedus for helpful discussion. This work was partly supported by BP Solar and National Renewable Energy Laboratory under Subcontract No. ADJ-1-30630-12. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

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AU - Lu, Meijun

AU - Bowden, Stuart

AU - Das, Ujjwal

AU - Birkmire, Robert

N1 - Funding Information: The authors would like to thank Kevin Hart and Shannon Fields for film depositions and Steven Hegedus for helpful discussion. This work was partly supported by BP Solar and National Renewable Energy Laboratory under Subcontract No. ADJ-1-30630-12. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2007

Y1 - 2007

N2 - This letter reports interdigitated back contact silicon heterojunction (IBC-SHJ) solar cells which combine the performance benefits of both back contact and heterojunction technologies while reducing their limitations. Low temperature (<200 °C) deposited p - and n -type amorphous silicon used to form interdigitated heteroemitter and contacts in the rear preserves substrate lifetime while minimizes optical losses in the front. The IBC-SHJ structure is ideal for diagnosing surface passivation quality, which is analyzed and measured by internal quantum efficiency and minority carrier lifetime measurements. Initial cells have independently confirmed efficiency of 11.8% under AM1.5 illumination. Simulations indicate efficiencies greater than 20% after optimization.

AB - This letter reports interdigitated back contact silicon heterojunction (IBC-SHJ) solar cells which combine the performance benefits of both back contact and heterojunction technologies while reducing their limitations. Low temperature (<200 °C) deposited p - and n -type amorphous silicon used to form interdigitated heteroemitter and contacts in the rear preserves substrate lifetime while minimizes optical losses in the front. The IBC-SHJ structure is ideal for diagnosing surface passivation quality, which is analyzed and measured by internal quantum efficiency and minority carrier lifetime measurements. Initial cells have independently confirmed efficiency of 11.8% under AM1.5 illumination. Simulations indicate efficiencies greater than 20% after optimization.

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Interdigitated back contact silicon heterojunction solar cell and the effect of front surface passivation

Abstract

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