Interdigitated back contact silicon heterojunction solar cell and the effect of front surface passivation

Meijun Lu, Stuart Bowden, Ujjwal Das, Robert Birkmire

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Abstract

This letter reports interdigitated back contact silicon heterojunction (IBC-SHJ) solar cells which combine the performance benefits of both back contact and heterojunction technologies while reducing their limitations. Low temperature (<200 °C) deposited p - and n -type amorphous silicon used to form interdigitated heteroemitter and contacts in the rear preserves substrate lifetime while minimizes optical losses in the front. The IBC-SHJ structure is ideal for diagnosing surface passivation quality, which is analyzed and measured by internal quantum efficiency and minority carrier lifetime measurements. Initial cells have independently confirmed efficiency of 11.8% under AM1.5 illumination. Simulations indicate efficiencies greater than 20% after optimization.

Original languageEnglish (US)
Article number063507
JournalApplied Physics Letters
Volume91
Issue number6
DOIs
Publication statusPublished - 2007
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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