Interband transitions of crystalline and amorphous SiO2

An electron energy-loss spectroscopy (EELS) study of the low-loss region

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Abstract

Surface and bulk low-loss spectra of α-quartz (c-SiO2), SiO2 glass (am-SiO2) and opal were studied by electron energy-loss spectroscopy (EELS) with a transmission electron microscope (TEM). Four interband transitions with similar energies occur in all samples. These transitions were investigated by comparison with published optical data and with the valence and joint density of states calculated by the pseudopotential method. The interband transitions arise from maxima in the valence-band density of states.

Original languageEnglish (US)
Pages (from-to)303-307
Number of pages5
JournalSolid State Communications
Volume106
Issue number5
StatePublished - May 1998

Fingerprint

Quartz
Electron energy loss spectroscopy
Electron transitions
Valence bands
Electron microscopes
energy dissipation
electron energy
Crystalline materials
Glass
spectroscopy
valence
pseudopotentials
quartz
electron microscopes
glass
energy

Keywords

  • A. insulators
  • D. dielectric response
  • E. electron energy loss spectroscopy
  • Electronic band structure

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

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title = "Interband transitions of crystalline and amorphous SiO2: An electron energy-loss spectroscopy (EELS) study of the low-loss region",
abstract = "Surface and bulk low-loss spectra of α-quartz (c-SiO2), SiO2 glass (am-SiO2) and opal were studied by electron energy-loss spectroscopy (EELS) with a transmission electron microscope (TEM). Four interband transitions with similar energies occur in all samples. These transitions were investigated by comparison with published optical data and with the valence and joint density of states calculated by the pseudopotential method. The interband transitions arise from maxima in the valence-band density of states.",
keywords = "A. insulators, D. dielectric response, E. electron energy loss spectroscopy, Electronic band structure",
author = "Laurence Garvie and Peter Rez and Alvarez, {J. R.} and Buseck, {P R}",
year = "1998",
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language = "English (US)",
volume = "106",
pages = "303--307",
journal = "Solid State Communications",
issn = "0038-1098",
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TY - JOUR

T1 - Interband transitions of crystalline and amorphous SiO2

T2 - An electron energy-loss spectroscopy (EELS) study of the low-loss region

AU - Garvie, Laurence

AU - Rez, Peter

AU - Alvarez, J. R.

AU - Buseck, P R

PY - 1998/5

Y1 - 1998/5

N2 - Surface and bulk low-loss spectra of α-quartz (c-SiO2), SiO2 glass (am-SiO2) and opal were studied by electron energy-loss spectroscopy (EELS) with a transmission electron microscope (TEM). Four interband transitions with similar energies occur in all samples. These transitions were investigated by comparison with published optical data and with the valence and joint density of states calculated by the pseudopotential method. The interband transitions arise from maxima in the valence-band density of states.

AB - Surface and bulk low-loss spectra of α-quartz (c-SiO2), SiO2 glass (am-SiO2) and opal were studied by electron energy-loss spectroscopy (EELS) with a transmission electron microscope (TEM). Four interband transitions with similar energies occur in all samples. These transitions were investigated by comparison with published optical data and with the valence and joint density of states calculated by the pseudopotential method. The interband transitions arise from maxima in the valence-band density of states.

KW - A. insulators

KW - D. dielectric response

KW - E. electron energy loss spectroscopy

KW - Electronic band structure

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M3 - Article

VL - 106

SP - 303

EP - 307

JO - Solid State Communications

JF - Solid State Communications

SN - 0038-1098

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