Interband transitions of crystalline and amorphous SiO2: An electron energy-loss spectroscopy (EELS) study of the low-loss region

Laurence Garvie; Peter Rez; J. R. Alvarez; P R Buseck

doi:10.1016/S0038-1098(98)00021-0

Interband transitions of crystalline and amorphous SiO₂: An electron energy-loss spectroscopy (EELS) study of the low-loss region

Laurence Garvie, Peter Rez, J. R. Alvarez, P R Buseck

Research output: Contribution to journal › Article › peer-review

48 Scopus citations

Abstract

Surface and bulk low-loss spectra of α-quartz (c-SiO₂), SiO₂ glass (am-SiO₂) and opal were studied by electron energy-loss spectroscopy (EELS) with a transmission electron microscope (TEM). Four interband transitions with similar energies occur in all samples. These transitions were investigated by comparison with published optical data and with the valence and joint density of states calculated by the pseudopotential method. The interband transitions arise from maxima in the valence-band density of states.

Original language	English (US)
Pages (from-to)	303-307
Number of pages	5
Journal	Solid State Communications
Volume	106
Issue number	5
DOIs	https://doi.org/10.1016/S0038-1098(98)00021-0
State	Published - May 1998

Keywords

A. insulators
D. dielectric response
E. electron energy loss spectroscopy
Electronic band structure

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

Access to Document

10.1016/S0038-1098(98)00021-0

Cite this

@article{1745f7ef438d48e293143d67abe54478,

title = "Interband transitions of crystalline and amorphous SiO2: An electron energy-loss spectroscopy (EELS) study of the low-loss region",

abstract = "Surface and bulk low-loss spectra of α-quartz (c-SiO2), SiO2 glass (am-SiO2) and opal were studied by electron energy-loss spectroscopy (EELS) with a transmission electron microscope (TEM). Four interband transitions with similar energies occur in all samples. These transitions were investigated by comparison with published optical data and with the valence and joint density of states calculated by the pseudopotential method. The interband transitions arise from maxima in the valence-band density of states.",

keywords = "A. insulators, D. dielectric response, E. electron energy loss spectroscopy, Electronic band structure",

author = "Laurence Garvie and Peter Rez and Alvarez, {J. R.} and Buseck, {P R}",

note = "Funding Information: Acknowledgements-This work was supported by grants from the National Science Foundation NSF EAR-9418206 (to PRB and LAJG) and DMR 930-6253 (to PR and JRA). The PEELS was performed at the Center for High Resolution Electron Microscopy at Arizona StateU niversity, establishedw ith supportf rom the National Science Foundation (DMR-89-13384).",

year = "1998",

month = may,

doi = "10.1016/S0038-1098(98)00021-0",

language = "English (US)",

volume = "106",

pages = "303--307",

journal = "Solid State Communications",

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T1 - Interband transitions of crystalline and amorphous SiO2

T2 - An electron energy-loss spectroscopy (EELS) study of the low-loss region

AU - Garvie, Laurence

AU - Rez, Peter

AU - Alvarez, J. R.

AU - Buseck, P R

N1 - Funding Information: Acknowledgements-This work was supported by grants from the National Science Foundation NSF EAR-9418206 (to PRB and LAJG) and DMR 930-6253 (to PR and JRA). The PEELS was performed at the Center for High Resolution Electron Microscopy at Arizona StateU niversity, establishedw ith supportf rom the National Science Foundation (DMR-89-13384).

PY - 1998/5

Y1 - 1998/5

N2 - Surface and bulk low-loss spectra of α-quartz (c-SiO2), SiO2 glass (am-SiO2) and opal were studied by electron energy-loss spectroscopy (EELS) with a transmission electron microscope (TEM). Four interband transitions with similar energies occur in all samples. These transitions were investigated by comparison with published optical data and with the valence and joint density of states calculated by the pseudopotential method. The interband transitions arise from maxima in the valence-band density of states.

AB - Surface and bulk low-loss spectra of α-quartz (c-SiO2), SiO2 glass (am-SiO2) and opal were studied by electron energy-loss spectroscopy (EELS) with a transmission electron microscope (TEM). Four interband transitions with similar energies occur in all samples. These transitions were investigated by comparison with published optical data and with the valence and joint density of states calculated by the pseudopotential method. The interband transitions arise from maxima in the valence-band density of states.

KW - A. insulators

KW - D. dielectric response

KW - E. electron energy loss spectroscopy

KW - Electronic band structure

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