Interaction of water with silicon dioxide at low temperature relevant to CMP

Scott A. Gold, Veronica Burrows

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The reaction of water with silicon dioxide to form silanol species has been proposed to be a major component of the silicon dioxide chemical mechanical penalization (CMP) mechanism. Internal-reflection infrared spectroscopy was used to examine this reaction at low temperatures relevant to CMP of silicon dioxide thin films during integrated circuit manufacture (20-80°C). No significant reaction was observed at 20°C; some silanol formation was observed at 80°C with long exposure times. Molecular water was the predominant hydrous species observed at 80°C indicating that silanol formation does not contribute as significantly to the CMP removal process as previously thought.

Original languageEnglish (US)
Article number4
JournalElectrochemical and Solid-State Letters
Volume7
Issue number12
DOIs
StatePublished - 2004

Fingerprint

Silicon Dioxide
Silica
silicon dioxide
Water
Integrated circuit manufacture
Thin film circuits
water
interactions
Temperature
integrated circuits
Infrared spectroscopy
infrared spectroscopy
thin films
silanol

ASJC Scopus subject areas

  • Electrochemistry
  • Materials Science(all)

Cite this

Interaction of water with silicon dioxide at low temperature relevant to CMP. / Gold, Scott A.; Burrows, Veronica.

In: Electrochemical and Solid-State Letters, Vol. 7, No. 12, 4, 2004.

Research output: Contribution to journalArticle

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