Abstract
The reaction of water with silicon dioxide to form silanol species has been proposed to be a major component of the silicon dioxide chemical mechanical penalization (CMP) mechanism. Internal-reflection infrared spectroscopy was used to examine this reaction at low temperatures relevant to CMP of silicon dioxide thin films during integrated circuit manufacture (20-80°C). No significant reaction was observed at 20°C; some silanol formation was observed at 80°C with long exposure times. Molecular water was the predominant hydrous species observed at 80°C indicating that silanol formation does not contribute as significantly to the CMP removal process as previously thought.
Original language | English (US) |
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Article number | 4 |
Pages (from-to) | G295-G298 |
Journal | Electrochemical and Solid-State Letters |
Volume | 7 |
Issue number | 12 |
DOIs | |
State | Published - Dec 1 2004 |
ASJC Scopus subject areas
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrochemistry
- Electrical and Electronic Engineering