Inter-laboratory study of eddy-current measurement of excess-carrier recombination lifetime

Adrienne L. Blum, James S. Swirhun, Ronald A. Sinton, Fei Yan, Stanislau Herasimenka, Thomas Roth, Kevin Lauer, Jonas Haunschild, Bianca Lim, Karsten Bothe, Ziv Hameiri, Bjoern Seipel, Rentian Xiong, Marwan Dhamrin, John D. Murphy

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Excess-carrier recombination lifetime is a key parameter in silicon solar cell design and production. With the vast international use and recent standardization (SEMI PV13) of eddy-current wafer and brick silicon lifetime test instruments, it is important to quantify the inter- and intra-laboratory repeatability. This paper presents results of an international inter-laboratory study conducted with 24 participants to determine the precision of the SEMI PV13 eddy-current carrier lifetime measurement test method. Overall, the carrier recombination lifetime between-laboratory reproducibility was found to be within ±11% for quasi-steady-state (QSS) mode and ±8% for transient mode for wafer samples and within ±4% for bulk samples.

Original languageEnglish (US)
Title of host publication39th IEEE Photovoltaic Specialists Conference, PVSC 2013
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1396-1401
Number of pages6
ISBN (Print)9781479932993
DOIs
StatePublished - Jan 1 2013
Event39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States
Duration: Jun 16 2013Jun 21 2013

Other

Other39th IEEE Photovoltaic Specialists Conference, PVSC 2013
CountryUnited States
CityTampa, FL
Period6/16/136/21/13

Fingerprint

Electric current measurement
Eddy currents
Carrier lifetime
Silicon solar cells
Brick
Standardization
Silicon

Keywords

  • Charge carrier lifetime
  • Eddy currents
  • Photoconductivity
  • Silicon

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Cite this

Blum, A. L., Swirhun, J. S., Sinton, R. A., Yan, F., Herasimenka, S., Roth, T., ... Murphy, J. D. (2013). Inter-laboratory study of eddy-current measurement of excess-carrier recombination lifetime. In 39th IEEE Photovoltaic Specialists Conference, PVSC 2013 (pp. 1396-1401). [6744405] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2013.6744405

Inter-laboratory study of eddy-current measurement of excess-carrier recombination lifetime. / Blum, Adrienne L.; Swirhun, James S.; Sinton, Ronald A.; Yan, Fei; Herasimenka, Stanislau; Roth, Thomas; Lauer, Kevin; Haunschild, Jonas; Lim, Bianca; Bothe, Karsten; Hameiri, Ziv; Seipel, Bjoern; Xiong, Rentian; Dhamrin, Marwan; Murphy, John D.

39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc., 2013. p. 1396-1401 6744405.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Blum, AL, Swirhun, JS, Sinton, RA, Yan, F, Herasimenka, S, Roth, T, Lauer, K, Haunschild, J, Lim, B, Bothe, K, Hameiri, Z, Seipel, B, Xiong, R, Dhamrin, M & Murphy, JD 2013, Inter-laboratory study of eddy-current measurement of excess-carrier recombination lifetime. in 39th IEEE Photovoltaic Specialists Conference, PVSC 2013., 6744405, Institute of Electrical and Electronics Engineers Inc., pp. 1396-1401, 39th IEEE Photovoltaic Specialists Conference, PVSC 2013, Tampa, FL, United States, 6/16/13. https://doi.org/10.1109/PVSC.2013.6744405
Blum AL, Swirhun JS, Sinton RA, Yan F, Herasimenka S, Roth T et al. Inter-laboratory study of eddy-current measurement of excess-carrier recombination lifetime. In 39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc. 2013. p. 1396-1401. 6744405 https://doi.org/10.1109/PVSC.2013.6744405
Blum, Adrienne L. ; Swirhun, James S. ; Sinton, Ronald A. ; Yan, Fei ; Herasimenka, Stanislau ; Roth, Thomas ; Lauer, Kevin ; Haunschild, Jonas ; Lim, Bianca ; Bothe, Karsten ; Hameiri, Ziv ; Seipel, Bjoern ; Xiong, Rentian ; Dhamrin, Marwan ; Murphy, John D. / Inter-laboratory study of eddy-current measurement of excess-carrier recombination lifetime. 39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc., 2013. pp. 1396-1401
@inproceedings{8a31b678fccd4e8e9773aaa48b03a074,
title = "Inter-laboratory study of eddy-current measurement of excess-carrier recombination lifetime",
abstract = "Excess-carrier recombination lifetime is a key parameter in silicon solar cell design and production. With the vast international use and recent standardization (SEMI PV13) of eddy-current wafer and brick silicon lifetime test instruments, it is important to quantify the inter- and intra-laboratory repeatability. This paper presents results of an international inter-laboratory study conducted with 24 participants to determine the precision of the SEMI PV13 eddy-current carrier lifetime measurement test method. Overall, the carrier recombination lifetime between-laboratory reproducibility was found to be within ±11{\%} for quasi-steady-state (QSS) mode and ±8{\%} for transient mode for wafer samples and within ±4{\%} for bulk samples.",
keywords = "Charge carrier lifetime, Eddy currents, Photoconductivity, Silicon",
author = "Blum, {Adrienne L.} and Swirhun, {James S.} and Sinton, {Ronald A.} and Fei Yan and Stanislau Herasimenka and Thomas Roth and Kevin Lauer and Jonas Haunschild and Bianca Lim and Karsten Bothe and Ziv Hameiri and Bjoern Seipel and Rentian Xiong and Marwan Dhamrin and Murphy, {John D.}",
year = "2013",
month = "1",
day = "1",
doi = "10.1109/PVSC.2013.6744405",
language = "English (US)",
isbn = "9781479932993",
pages = "1396--1401",
booktitle = "39th IEEE Photovoltaic Specialists Conference, PVSC 2013",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - Inter-laboratory study of eddy-current measurement of excess-carrier recombination lifetime

AU - Blum, Adrienne L.

AU - Swirhun, James S.

AU - Sinton, Ronald A.

AU - Yan, Fei

AU - Herasimenka, Stanislau

AU - Roth, Thomas

AU - Lauer, Kevin

AU - Haunschild, Jonas

AU - Lim, Bianca

AU - Bothe, Karsten

AU - Hameiri, Ziv

AU - Seipel, Bjoern

AU - Xiong, Rentian

AU - Dhamrin, Marwan

AU - Murphy, John D.

PY - 2013/1/1

Y1 - 2013/1/1

N2 - Excess-carrier recombination lifetime is a key parameter in silicon solar cell design and production. With the vast international use and recent standardization (SEMI PV13) of eddy-current wafer and brick silicon lifetime test instruments, it is important to quantify the inter- and intra-laboratory repeatability. This paper presents results of an international inter-laboratory study conducted with 24 participants to determine the precision of the SEMI PV13 eddy-current carrier lifetime measurement test method. Overall, the carrier recombination lifetime between-laboratory reproducibility was found to be within ±11% for quasi-steady-state (QSS) mode and ±8% for transient mode for wafer samples and within ±4% for bulk samples.

AB - Excess-carrier recombination lifetime is a key parameter in silicon solar cell design and production. With the vast international use and recent standardization (SEMI PV13) of eddy-current wafer and brick silicon lifetime test instruments, it is important to quantify the inter- and intra-laboratory repeatability. This paper presents results of an international inter-laboratory study conducted with 24 participants to determine the precision of the SEMI PV13 eddy-current carrier lifetime measurement test method. Overall, the carrier recombination lifetime between-laboratory reproducibility was found to be within ±11% for quasi-steady-state (QSS) mode and ±8% for transient mode for wafer samples and within ±4% for bulk samples.

KW - Charge carrier lifetime

KW - Eddy currents

KW - Photoconductivity

KW - Silicon

UR - http://www.scopus.com/inward/record.url?scp=84896473254&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84896473254&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2013.6744405

DO - 10.1109/PVSC.2013.6744405

M3 - Conference contribution

AN - SCOPUS:84896473254

SN - 9781479932993

SP - 1396

EP - 1401

BT - 39th IEEE Photovoltaic Specialists Conference, PVSC 2013

PB - Institute of Electrical and Electronics Engineers Inc.

ER -