Integrity of III-V heterojunction interfaces under gamma irradiation

S. Subramanian; A. Sarkar; L. Ungier; S. M. Goodnick

doi:10.1109/23.658954

Integrity of III-V heterojunction interfaces under gamma irradiation

S. Subramanian, A. Sarkar, L. Ungier, S. M. Goodnick

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Reliability of modern III-V semiconductor heterostructure devices meant for strong radiation environment depends upon the integrity of the hetero-interfaces under radiation. In this paper, we present some results of our investigation of a variety of heterojunction structures subjected to gamma irradiation up to 40 Mrads (Si) probed by Hall, C-V and photoluminescence measurements.

Original language	English (US)
Pages (from-to)	1862-1869
Number of pages	8
Journal	IEEE Transactions on Nuclear Science
Volume	44
Issue number	6 PART 1
DOIs	https://doi.org/10.1109/23.658954
State	Published - 1997
Externally published	Yes

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/23.658954

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title = "Integrity of III-V heterojunction interfaces under gamma irradiation",

abstract = "Reliability of modern III-V semiconductor heterostructure devices meant for strong radiation environment depends upon the integrity of the hetero-interfaces under radiation. In this paper, we present some results of our investigation of a variety of heterojunction structures subjected to gamma irradiation up to 40 Mrads (Si) probed by Hall, C-V and photoluminescence measurements.",

author = "S. Subramanian and A. Sarkar and L. Ungier and Goodnick, {S. M.}",

note = "Funding Information: The authors wish to thank the OSU Radiation Center staff for their excellent help in providing gamma irradiation facilities. This work was supported by the grant No. F49620-96-1-0173 from the Air Force Office of Scientific Research.",

year = "1997",

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AU - Subramanian, S.

AU - Sarkar, A.

AU - Ungier, L.

AU - Goodnick, S. M.

N1 - Funding Information: The authors wish to thank the OSU Radiation Center staff for their excellent help in providing gamma irradiation facilities. This work was supported by the grant No. F49620-96-1-0173 from the Air Force Office of Scientific Research.

PY - 1997

Y1 - 1997

N2 - Reliability of modern III-V semiconductor heterostructure devices meant for strong radiation environment depends upon the integrity of the hetero-interfaces under radiation. In this paper, we present some results of our investigation of a variety of heterojunction structures subjected to gamma irradiation up to 40 Mrads (Si) probed by Hall, C-V and photoluminescence measurements.

AB - Reliability of modern III-V semiconductor heterostructure devices meant for strong radiation environment depends upon the integrity of the hetero-interfaces under radiation. In this paper, we present some results of our investigation of a variety of heterojunction structures subjected to gamma irradiation up to 40 Mrads (Si) probed by Hall, C-V and photoluminescence measurements.

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Integrity of III-V heterojunction interfaces under gamma irradiation

Abstract

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