Integration of Zn-Cd-Te-Se Semiconductors on Si platforms via structurally designed cubic templates based on group IV elements

John Tolle, Radek Roucka, Brandon Forrest, Andrew Chizmeshya, John Kouvetakis, Vijay R. D'Costa, Christian D. Poweleit, Michael Groenert, Taketomo Sato, Jose Menendez

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

This work describes the development and application of a new class of highly versatile Ge-Sn/Si (100) hybrid substrate systems for the integration of a broad range of technologically important II-VI optical materials on silicon platforms. GeSn buffer layers were grown directly on Si(100), via introduction of Lomer edge dislocations at the interface, and exhibited low densities of threading defects, atomically flat surfaces, and strain-free microstructures. Specialized cleaning protocols were first developed to obtain GeSn surfaces possessing superior chemical purity and single-crystalline, long-range orientation for subsequent heteroepitaxy. The quality of the resulting platforms was then validated using proof-of-concept fabrication of prototype AlGaAs/GaAs/AlGaAs quantum well structures, which exhibited optical properties comparable to those of analogs grown via homoepitaxy on bulk GaAs substrates. The application of these platforms in CMOS-compatible integration of the II-VI materials was explored using a progressive strategy based on the systematic epitaxial fabrication of simple binaries within Zn-Cd-Te-Se class. This culminated in the formation of fully lattice matched ZnSe/GeSn/Si(100) structures for the first time, as well as highly mismatched CdTe and CdTe/ZnTe systems directly on silicon. These successful depositions represent an importantmilestone en route to the ultimate integration of ZnSe, CdTe, Zn 1-zCd zTe andHg 1-xCd xTe with Si for applications in high-performance IR photodetectors, imaging technologies, and highefficiency, low-cost solar cells.

Original languageEnglish (US)
Pages (from-to)3143-3152
Number of pages10
JournalChemistry of Materials
Volume21
Issue number14
DOIs
StatePublished - Jul 28 2009

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry

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