Integration of thin layers of single-crystalline InP with flexible substrates

Wayne Chen; Peng Chen; J. E. Pulsifer; Terry Alford; T. F. Kuech; S. S. Lau

doi:10.1063/1.2937409

Integration of thin layers of single-crystalline InP with flexible substrates

Wayne Chen, Peng Chen, J. E. Pulsifer, Terry Alford, T. F. Kuech, S. S. Lau

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Transfer of thin semiconductor layers onto flexible substrates using a combination of ion cutting, adhesive bonding, and laser ablation was investigated. An ∼1.3 μm thick InP layer was first transferred onto sapphire using adhesive bonding and hydrogen-induced layer exfoliation at ∼180 °C. The resulting structure was then adhesively bonded onto flexible polyethylene naphthalate substrate, followed by UV laser ablation of the first adhesive to separate the initial bond. Additional transfer steps were inserted into the process to enable thermal annealing and electrical recovery. The transferred films were electrically characterized and the potential use in high-speed, flexible electronics is discussed.

Original language	English (US)
Article number	212109
Journal	Applied Physics Letters
Volume	92
Issue number	21
DOIs	https://doi.org/10.1063/1.2937409
State	Published - 2008

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2937409

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title = "Integration of thin layers of single-crystalline InP with flexible substrates",

abstract = "Transfer of thin semiconductor layers onto flexible substrates using a combination of ion cutting, adhesive bonding, and laser ablation was investigated. An ∼1.3 μm thick InP layer was first transferred onto sapphire using adhesive bonding and hydrogen-induced layer exfoliation at ∼180 °C. The resulting structure was then adhesively bonded onto flexible polyethylene naphthalate substrate, followed by UV laser ablation of the first adhesive to separate the initial bond. Additional transfer steps were inserted into the process to enable thermal annealing and electrical recovery. The transferred films were electrically characterized and the potential use in high-speed, flexible electronics is discussed.",

author = "Wayne Chen and Peng Chen and Pulsifer, {J. E.} and Terry Alford and Kuech, {T. F.} and Lau, {S. S.}",

note = "Funding Information: U.C.S.D and U.W. Madison gratefully acknowledge sponsorship from the ARO MURI W911NF-05-1-0262 (Dr. John Prater). A.S.U. acknowledges support from the National Science Foundation (L. Hess, Grant No. DMR-0602716).",

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doi = "10.1063/1.2937409",

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T1 - Integration of thin layers of single-crystalline InP with flexible substrates

AU - Chen, Wayne

AU - Chen, Peng

AU - Pulsifer, J. E.

AU - Alford, Terry

AU - Kuech, T. F.

AU - Lau, S. S.

N1 - Funding Information: U.C.S.D and U.W. Madison gratefully acknowledge sponsorship from the ARO MURI W911NF-05-1-0262 (Dr. John Prater). A.S.U. acknowledges support from the National Science Foundation (L. Hess, Grant No. DMR-0602716).

PY - 2008

Y1 - 2008

N2 - Transfer of thin semiconductor layers onto flexible substrates using a combination of ion cutting, adhesive bonding, and laser ablation was investigated. An ∼1.3 μm thick InP layer was first transferred onto sapphire using adhesive bonding and hydrogen-induced layer exfoliation at ∼180 °C. The resulting structure was then adhesively bonded onto flexible polyethylene naphthalate substrate, followed by UV laser ablation of the first adhesive to separate the initial bond. Additional transfer steps were inserted into the process to enable thermal annealing and electrical recovery. The transferred films were electrically characterized and the potential use in high-speed, flexible electronics is discussed.

AB - Transfer of thin semiconductor layers onto flexible substrates using a combination of ion cutting, adhesive bonding, and laser ablation was investigated. An ∼1.3 μm thick InP layer was first transferred onto sapphire using adhesive bonding and hydrogen-induced layer exfoliation at ∼180 °C. The resulting structure was then adhesively bonded onto flexible polyethylene naphthalate substrate, followed by UV laser ablation of the first adhesive to separate the initial bond. Additional transfer steps were inserted into the process to enable thermal annealing and electrical recovery. The transferred films were electrically characterized and the potential use in high-speed, flexible electronics is discussed.

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Integration of thin layers of single-crystalline InP with flexible substrates

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