Abstract

Transfer of thin semiconductor layers onto flexible substrates using a combination of ion cutting, adhesive bonding, and laser ablation was investigated. An ∼1.3 μm thick InP layer was first transferred onto sapphire using adhesive bonding and hydrogen-induced layer exfoliation at ∼180 °C. The resulting structure was then adhesively bonded onto flexible polyethylene naphthalate substrate, followed by UV laser ablation of the first adhesive to separate the initial bond. Additional transfer steps were inserted into the process to enable thermal annealing and electrical recovery. The transferred films were electrically characterized and the potential use in high-speed, flexible electronics is discussed.

Original languageEnglish (US)
Article number212109
JournalApplied Physics Letters
Volume92
Issue number21
DOIs
StatePublished - 2008

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adhesive bonding
laser ablation
ultraviolet lasers
adhesives
polyethylenes
sapphire
recovery
high speed
annealing
hydrogen
electronics
ions

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Integration of thin layers of single-crystalline InP with flexible substrates. / Chen, Wayne; Chen, Peng; Pulsifer, J. E.; Alford, Terry; Kuech, T. F.; Lau, S. S.

In: Applied Physics Letters, Vol. 92, No. 21, 212109, 2008.

Research output: Contribution to journalArticle

Chen, Wayne ; Chen, Peng ; Pulsifer, J. E. ; Alford, Terry ; Kuech, T. F. ; Lau, S. S. / Integration of thin layers of single-crystalline InP with flexible substrates. In: Applied Physics Letters. 2008 ; Vol. 92, No. 21.
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