Integration of 32×32 photodiode arrays with silicon for massively parallel optical interconnects

C. M. Ryu, U. Koelle, Shane Johnson, P. Dowd, R. Turpin, S. Adhiveeraraghavan, Jin Xu, Yong-Hang Zhang, D. Docter

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

32×32 p-i-n photodiode arrays are integrated with Si-dummy chips for potential use in massively parallel short-distance optical interconnects. Individual devices in 32×32 InGaAs/InP photodetector arrays are tested. A small signal modulation speed above 10 GHz under dark condition, corresponding to an aggregate data transmission capacity in excess of tera-bits, is demonstrated.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages106-113
Number of pages8
Volume3952
StatePublished - 2000
EventOptoelectronic Interconnects VII; Photonics Packaging and Integration II - San Jose, CA, USA
Duration: Jan 24 2000Jan 26 2000

Other

OtherOptoelectronic Interconnects VII; Photonics Packaging and Integration II
CitySan Jose, CA, USA
Period1/24/001/26/00

    Fingerprint

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Ryu, C. M., Koelle, U., Johnson, S., Dowd, P., Turpin, R., Adhiveeraraghavan, S., Xu, J., Zhang, Y-H., & Docter, D. (2000). Integration of 32×32 photodiode arrays with silicon for massively parallel optical interconnects. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 3952, pp. 106-113). Society of Photo-Optical Instrumentation Engineers.