Abstract
32×32 p-i-n photodiode arrays are integrated with Si-dummy chips for potential use in massively parallel short-distance optical interconnects. Individual devices in 32×32 InGaAs/InP photodetector arrays are tested. A small signal modulation speed above 10 GHz under dark condition, corresponding to an aggregate data transmission capacity in excess of tera-bits, is demonstrated.
Original language | English (US) |
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Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
Publisher | Society of Photo-Optical Instrumentation Engineers |
Pages | 106-113 |
Number of pages | 8 |
Volume | 3952 |
State | Published - 2000 |
Event | Optoelectronic Interconnects VII; Photonics Packaging and Integration II - San Jose, CA, USA Duration: Jan 24 2000 → Jan 26 2000 |
Other
Other | Optoelectronic Interconnects VII; Photonics Packaging and Integration II |
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City | San Jose, CA, USA |
Period | 1/24/00 → 1/26/00 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics