Integration issues in metallic source/drain nanoscale CMOS

Meng Tao, M. Y. Ali, G. Song

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The performance of Schotky source'drain nanoscale CMOS is critically dependent on a low barrier between metal and Si. Low Schottky barriers have been recently realized with various metals on selenium or sulfur passivated Si(100) surface, with a ∼0-eV barrier height for electrons and a ∼0.17-eV barrier height for holes demonstrated. Several issues need to be addressed for integration of these low Schottky barriers into Schottky source/drain CMOS. This paper reports our recent results or low Schottky barriers on ntype and p-type Si(100) surface, thermal stability of these low Schottky barriers upon annealing, and self-aligned integration of these low-barrier metallic source/drain into nanoscale CMOS. Electrical characterization suggests that these low Schottky barriers are thermally stable to ∼400°C. A self-aligned fabrication process involving chemical mechanical polishing is proposed for these metallic source/drain CMOS devices.

Original languageEnglish (US)
Title of host publicationECS Transactions
Pages253-263
Number of pages11
Volume11
Edition6
DOIs
StatePublished - 2007
Externally publishedYes
Event5th International Symposium on ULSI Process Integration - 212th ECS Meeting - Washington, DC, United States
Duration: Oct 7 2007Oct 12 2007

Other

Other5th International Symposium on ULSI Process Integration - 212th ECS Meeting
CountryUnited States
CityWashington, DC
Period10/7/0710/12/07

Fingerprint

Chemical mechanical polishing
Selenium
Metals
Thermodynamic stability
Sulfur
Annealing
Fabrication
Electrons

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Tao, M., Ali, M. Y., & Song, G. (2007). Integration issues in metallic source/drain nanoscale CMOS. In ECS Transactions (6 ed., Vol. 11, pp. 253-263) https://doi.org/10.1149/1.2778383

Integration issues in metallic source/drain nanoscale CMOS. / Tao, Meng; Ali, M. Y.; Song, G.

ECS Transactions. Vol. 11 6. ed. 2007. p. 253-263.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Tao, M, Ali, MY & Song, G 2007, Integration issues in metallic source/drain nanoscale CMOS. in ECS Transactions. 6 edn, vol. 11, pp. 253-263, 5th International Symposium on ULSI Process Integration - 212th ECS Meeting, Washington, DC, United States, 10/7/07. https://doi.org/10.1149/1.2778383
Tao M, Ali MY, Song G. Integration issues in metallic source/drain nanoscale CMOS. In ECS Transactions. 6 ed. Vol. 11. 2007. p. 253-263 https://doi.org/10.1149/1.2778383
Tao, Meng ; Ali, M. Y. ; Song, G. / Integration issues in metallic source/drain nanoscale CMOS. ECS Transactions. Vol. 11 6. ed. 2007. pp. 253-263
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