@inproceedings{a68e0ab3d69f40f3b1c21adcea68614b,
title = "Integration issues in metallic source/drain nanoscale CMOS",
abstract = "The performance of Schotky source'drain nanoscale CMOS is critically dependent on a low barrier between metal and Si. Low Schottky barriers have been recently realized with various metals on selenium or sulfur passivated Si(100) surface, with a ∼0-eV barrier height for electrons and a ∼0.17-eV barrier height for holes demonstrated. Several issues need to be addressed for integration of these low Schottky barriers into Schottky source/drain CMOS. This paper reports our recent results or low Schottky barriers on ntype and p-type Si(100) surface, thermal stability of these low Schottky barriers upon annealing, and self-aligned integration of these low-barrier metallic source/drain into nanoscale CMOS. Electrical characterization suggests that these low Schottky barriers are thermally stable to ∼400°C. A self-aligned fabrication process involving chemical mechanical polishing is proposed for these metallic source/drain CMOS devices.",
author = "M. Tao and Ali, {M. Y.} and G. Song",
year = "2007",
doi = "10.1149/1.2778383",
language = "English (US)",
isbn = "9781566775724",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "6",
pages = "253--263",
booktitle = "ECS Transactions - 5th International Symposium on ULSI Process Integration",
edition = "6",
note = "5th International Symposium on ULSI Process Integration - 212th ECS Meeting ; Conference date: 07-10-2007 Through 12-10-2007",
}