Integration and electrical characterization of photosensitive polyimide

Terry Alford, Y. L. Zou, Kaustubh S. Gadre, C. King, W. Chen, N. David Theodore

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Electrical characterization and integration of photosensitive polyimide (PSPI) was discussed. Development of a base line process of self-priming PSPI was described to significantly reduce cycle time in backend polyimide process. The feasibility of the use of polyimide as a passivation etch mask and passivation stress buffer layer was demonstrated. Electrical characterization was performed for the measurement of intralevel leakage current and surface resistance along the interface between the polyimide and tetraethylorthosilicate. Reduction of the moisture content of the polymer films was found to be critical to ensure electrical isolation during the integration of PSPI into multilevel structures.

Original languageEnglish (US)
Pages (from-to)774-779
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume19
Issue number3
DOIs
StatePublished - May 2001

Fingerprint

polyimides
Polyimides
Passivation
passivity
priming
Surface resistance
Buffer layers
Polymer films
Leakage currents
moisture content
Masks
isolation
leakage
Moisture
masks
buffers
cycles
polymers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

Integration and electrical characterization of photosensitive polyimide. / Alford, Terry; Zou, Y. L.; Gadre, Kaustubh S.; King, C.; Chen, W.; Theodore, N. David.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 19, No. 3, 05.2001, p. 774-779.

Research output: Contribution to journalArticle

Alford, Terry ; Zou, Y. L. ; Gadre, Kaustubh S. ; King, C. ; Chen, W. ; Theodore, N. David. / Integration and electrical characterization of photosensitive polyimide. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2001 ; Vol. 19, No. 3. pp. 774-779.
@article{b31d0fd10a304963b0a26574eebb2fdb,
title = "Integration and electrical characterization of photosensitive polyimide",
abstract = "Electrical characterization and integration of photosensitive polyimide (PSPI) was discussed. Development of a base line process of self-priming PSPI was described to significantly reduce cycle time in backend polyimide process. The feasibility of the use of polyimide as a passivation etch mask and passivation stress buffer layer was demonstrated. Electrical characterization was performed for the measurement of intralevel leakage current and surface resistance along the interface between the polyimide and tetraethylorthosilicate. Reduction of the moisture content of the polymer films was found to be critical to ensure electrical isolation during the integration of PSPI into multilevel structures.",
author = "Terry Alford and Zou, {Y. L.} and Gadre, {Kaustubh S.} and C. King and W. Chen and Theodore, {N. David}",
year = "2001",
month = "5",
doi = "10.1116/1.1364703",
language = "English (US)",
volume = "19",
pages = "774--779",
journal = "Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "3",

}

TY - JOUR

T1 - Integration and electrical characterization of photosensitive polyimide

AU - Alford, Terry

AU - Zou, Y. L.

AU - Gadre, Kaustubh S.

AU - King, C.

AU - Chen, W.

AU - Theodore, N. David

PY - 2001/5

Y1 - 2001/5

N2 - Electrical characterization and integration of photosensitive polyimide (PSPI) was discussed. Development of a base line process of self-priming PSPI was described to significantly reduce cycle time in backend polyimide process. The feasibility of the use of polyimide as a passivation etch mask and passivation stress buffer layer was demonstrated. Electrical characterization was performed for the measurement of intralevel leakage current and surface resistance along the interface between the polyimide and tetraethylorthosilicate. Reduction of the moisture content of the polymer films was found to be critical to ensure electrical isolation during the integration of PSPI into multilevel structures.

AB - Electrical characterization and integration of photosensitive polyimide (PSPI) was discussed. Development of a base line process of self-priming PSPI was described to significantly reduce cycle time in backend polyimide process. The feasibility of the use of polyimide as a passivation etch mask and passivation stress buffer layer was demonstrated. Electrical characterization was performed for the measurement of intralevel leakage current and surface resistance along the interface between the polyimide and tetraethylorthosilicate. Reduction of the moisture content of the polymer films was found to be critical to ensure electrical isolation during the integration of PSPI into multilevel structures.

UR - http://www.scopus.com/inward/record.url?scp=0035326214&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035326214&partnerID=8YFLogxK

U2 - 10.1116/1.1364703

DO - 10.1116/1.1364703

M3 - Article

AN - SCOPUS:0035326214

VL - 19

SP - 774

EP - 779

JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

SN - 1071-1023

IS - 3

ER -