Integration and electrical characterization of photosensitive polyimide

Terry Alford; Y. L. Zou; Kaustubh S. Gadre; C. King; W. Chen; N. David Theodore

doi:10.1116/1.1364703

Integration and electrical characterization of photosensitive polyimide

Terry Alford, Y. L. Zou, Kaustubh S. Gadre, C. King, W. Chen, N. David Theodore

Chemical Engineering

Research output: Contribution to journal › Conference article › peer-review

4 Scopus citations

Abstract

Electrical characterization and integration of photosensitive polyimide (PSPI) was discussed. Development of a base line process of self-priming PSPI was described to significantly reduce cycle time in backend polyimide process. The feasibility of the use of polyimide as a passivation etch mask and passivation stress buffer layer was demonstrated. Electrical characterization was performed for the measurement of intralevel leakage current and surface resistance along the interface between the polyimide and tetraethylorthosilicate. Reduction of the moisture content of the polymer films was found to be critical to ensure electrical isolation during the integration of PSPI into multilevel structures.

Original language	English (US)
Pages (from-to)	774-779
Number of pages	6
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	19
Issue number	3
DOIs	https://doi.org/10.1116/1.1364703
State	Published - May 1 2001
Event	13th International Vaccum Microelectronics Conference - Guangzhou, China Duration: Aug 14 2000 → Aug 17 2000

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Integration and electrical characterization of photosensitive polyimide",

abstract = "Electrical characterization and integration of photosensitive polyimide (PSPI) was discussed. Development of a base line process of self-priming PSPI was described to significantly reduce cycle time in backend polyimide process. The feasibility of the use of polyimide as a passivation etch mask and passivation stress buffer layer was demonstrated. Electrical characterization was performed for the measurement of intralevel leakage current and surface resistance along the interface between the polyimide and tetraethylorthosilicate. Reduction of the moisture content of the polymer films was found to be critical to ensure electrical isolation during the integration of PSPI into multilevel structures.",

author = "Terry Alford and Zou, {Y. L.} and Gadre, {Kaustubh S.} and C. King and W. Chen and Theodore, {N. David}",

year = "2001",

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doi = "10.1116/1.1364703",

language = "English (US)",

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note = "13th International Vaccum Microelectronics Conference ; Conference date: 14-08-2000 Through 17-08-2000",

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TY - JOUR

T1 - Integration and electrical characterization of photosensitive polyimide

AU - Alford, Terry

AU - Zou, Y. L.

AU - Gadre, Kaustubh S.

AU - King, C.

AU - Chen, W.

AU - Theodore, N. David

PY - 2001/5/1

Y1 - 2001/5/1

N2 - Electrical characterization and integration of photosensitive polyimide (PSPI) was discussed. Development of a base line process of self-priming PSPI was described to significantly reduce cycle time in backend polyimide process. The feasibility of the use of polyimide as a passivation etch mask and passivation stress buffer layer was demonstrated. Electrical characterization was performed for the measurement of intralevel leakage current and surface resistance along the interface between the polyimide and tetraethylorthosilicate. Reduction of the moisture content of the polymer films was found to be critical to ensure electrical isolation during the integration of PSPI into multilevel structures.

AB - Electrical characterization and integration of photosensitive polyimide (PSPI) was discussed. Development of a base line process of self-priming PSPI was described to significantly reduce cycle time in backend polyimide process. The feasibility of the use of polyimide as a passivation etch mask and passivation stress buffer layer was demonstrated. Electrical characterization was performed for the measurement of intralevel leakage current and surface resistance along the interface between the polyimide and tetraethylorthosilicate. Reduction of the moisture content of the polymer films was found to be critical to ensure electrical isolation during the integration of PSPI into multilevel structures.

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DO - 10.1116/1.1364703

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VL - 19

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EP - 779

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 3

T2 - 13th International Vaccum Microelectronics Conference

Y2 - 14 August 2000 through 17 August 2000

ER -

Integration and electrical characterization of photosensitive polyimide

Abstract

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