Integration and electrical characterization of photosensitive polyimide

Terry Alford, Y. L. Zou, Kaustubh S. Gadre, C. King, W. Chen, N. David Theodore

Research output: Contribution to journalConference article

4 Scopus citations

Abstract

Electrical characterization and integration of photosensitive polyimide (PSPI) was discussed. Development of a base line process of self-priming PSPI was described to significantly reduce cycle time in backend polyimide process. The feasibility of the use of polyimide as a passivation etch mask and passivation stress buffer layer was demonstrated. Electrical characterization was performed for the measurement of intralevel leakage current and surface resistance along the interface between the polyimide and tetraethylorthosilicate. Reduction of the moisture content of the polymer films was found to be critical to ensure electrical isolation during the integration of PSPI into multilevel structures.

Original languageEnglish (US)
Pages (from-to)774-779
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume19
Issue number3
DOIs
StatePublished - May 1 2001
Event13th International Vaccum Microelectronics Conference - Guangzhou, China
Duration: Aug 14 2000Aug 17 2000

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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