Insulating state in open quantum dots and quantum dot arrays

F. Ge; C. Prasad; A. Andresen; J. P. Bird; D. K. Ferry; L. H. Lin; N. Aoki; K. Nakao; Y. Ochiai; K. Ishibashi; Y. Aoyagi; T. Sugano

doi:10.1002/(SICI)1521-3889(200001)9:1<65::AID-ANDP65>3.0.CO;2-M

Insulating state in open quantum dots and quantum dot arrays

F. Ge, C. Prasad, A. Andresen, J. P. Bird, D. K. Ferry, L. H. Lin, N. Aoki, K. Nakao, Y. Ochiai, K. Ishibashi, Y. Aoyagi, T. Sugano

Research output: Contribution to journal › Article › peer-review

Abstract

We describe the observation of novel localization in mesoscopic quantum dots and quantum dot arrays, which are realized in high mobility GaAs/AlGaAs heterojunctions using the split-gate technique. With a sufficient gate voltage applied to form the devices, their resistance diverges as the temperature is lowered below a degree Kelvin, behavior which we attribute to localization. Evidence for the localization is found over the entire range of gate voltage for which the dots are defined, persisting to conductances higher than 50e²/h.

Original language	English (US)
Pages (from-to)	65-68
Number of pages	4
Journal	Annalen der Physik (Leipzig)
Volume	9
Issue number	1
DOIs	https://doi.org/10.1002/(SICI)1521-3889(200001)9:1<65::AID-ANDP65>3.0.CO;2-M
State	Published - 2000

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1002/(SICI)1521-3889(200001)9:1<65::AID-ANDP65>3.0.CO;2-M

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title = "Insulating state in open quantum dots and quantum dot arrays",

abstract = "We describe the observation of novel localization in mesoscopic quantum dots and quantum dot arrays, which are realized in high mobility GaAs/AlGaAs heterojunctions using the split-gate technique. With a sufficient gate voltage applied to form the devices, their resistance diverges as the temperature is lowered below a degree Kelvin, behavior which we attribute to localization. Evidence for the localization is found over the entire range of gate voltage for which the dots are defined, persisting to conductances higher than 50e2/h.",

author = "F. Ge and C. Prasad and A. Andresen and Bird, {J. P.} and Ferry, {D. K.} and Lin, {L. H.} and N. Aoki and K. Nakao and Y. Ochiai and K. Ishibashi and Y. Aoyagi and T. Sugano",

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doi = "10.1002/(SICI)1521-3889(200001)9:1<65::AID-ANDP65>3.0.CO;2-M",

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TY - JOUR

T1 - Insulating state in open quantum dots and quantum dot arrays

AU - Ge, F.

AU - Prasad, C.

AU - Andresen, A.

AU - Bird, J. P.

AU - Ferry, D. K.

AU - Lin, L. H.

AU - Aoki, N.

AU - Nakao, K.

AU - Ochiai, Y.

AU - Ishibashi, K.

AU - Aoyagi, Y.

AU - Sugano, T.

PY - 2000

Y1 - 2000

N2 - We describe the observation of novel localization in mesoscopic quantum dots and quantum dot arrays, which are realized in high mobility GaAs/AlGaAs heterojunctions using the split-gate technique. With a sufficient gate voltage applied to form the devices, their resistance diverges as the temperature is lowered below a degree Kelvin, behavior which we attribute to localization. Evidence for the localization is found over the entire range of gate voltage for which the dots are defined, persisting to conductances higher than 50e2/h.

AB - We describe the observation of novel localization in mesoscopic quantum dots and quantum dot arrays, which are realized in high mobility GaAs/AlGaAs heterojunctions using the split-gate technique. With a sufficient gate voltage applied to form the devices, their resistance diverges as the temperature is lowered below a degree Kelvin, behavior which we attribute to localization. Evidence for the localization is found over the entire range of gate voltage for which the dots are defined, persisting to conductances higher than 50e2/h.

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JO - Annalen der Physik

JF - Annalen der Physik

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Insulating state in open quantum dots and quantum dot arrays

Abstract

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