Insulating state in open quantum dots and quantum dot arrays

F. Ge, C. Prasad, A. Andresen, J. P. Bird, D. K. Ferry, L. H. Lin, N. Aoki, K. Nakao, Y. Ochiai, K. Ishibashi, Y. Aoyagi, T. Sugano

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

We describe the observation of novel localization in mesoscopic quantum dots and quantum dot arrays, which are realized in high mobility GaAs/AlGaAs heterojunctions using the split-gate technique. With a sufficient gate voltage applied to form the devices, their resistance diverges as the temperature is lowered below a degree Kelvin, behavior which we attribute to localization. Evidence for the localization is found over the entire range of gate voltage for which the dots are defined, persisting to conductances higher than 50e2/h.

Original languageEnglish (US)
Pages (from-to)65-68
Number of pages4
JournalAnnalen der Physik (Leipzig)
Volume9
Issue number1
DOIs
StatePublished - 2000

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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