Instabilities in quantum point contact structures

M. N. Wybourne; Jolinda C. Smith; C. Berven; R. Ramasubramaniam; S. M. Goodnick

doi:10.1006/spmi.1996.0098

Instabilities in quantum point contact structures

M. N. Wybourne, Jolinda C. Smith, C. Berven, R. Ramasubramaniam, S. M. Goodnick

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We discuss the appearance of strong nonlinearities including S-type negative differential conductance in the I-V characteristics of quantum point contact (QPC) structures. Time-dependent measurements demonstrate that the highly nonlinear d.c. I-V features are associated with a temporal average of random telegraph switching (RTS) between different current levels. The RTS is only observed when the voltage across the device is such that the chemical potential on one side of the QPC is aligned with the bottom of a one-dimensional subband in the QPC. As the chemical potential is moved further into the subband, the switching behavior disappears until the next subband minimum is reached.

Original language	English (US)
Pages (from-to)	419-425
Number of pages	7
Journal	Superlattices and Microstructures
Volume	20
Issue number	4
DOIs	https://doi.org/10.1006/spmi.1996.0098
State	Published - 1996
Externally published	Yes

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Electrical and Electronic Engineering

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@article{949a340a444d4253b63d2f749bffebab,

title = "Instabilities in quantum point contact structures",

abstract = "We discuss the appearance of strong nonlinearities including S-type negative differential conductance in the I-V characteristics of quantum point contact (QPC) structures. Time-dependent measurements demonstrate that the highly nonlinear d.c. I-V features are associated with a temporal average of random telegraph switching (RTS) between different current levels. The RTS is only observed when the voltage across the device is such that the chemical potential on one side of the QPC is aligned with the bottom of a one-dimensional subband in the QPC. As the chemical potential is moved further into the subband, the switching behavior disappears until the next subband minimum is reached.",

author = "Wybourne, {M. N.} and Smith, {Jolinda C.} and C. Berven and R. Ramasubramaniam and Goodnick, {S. M.}",

note = "Funding Information: Acknowledgement—This work has been supported by the Office of Naval Research, grant number N00014-93-1-0618. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.",

year = "1996",

doi = "10.1006/spmi.1996.0098",

language = "English (US)",

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T1 - Instabilities in quantum point contact structures

AU - Wybourne, M. N.

AU - Smith, Jolinda C.

AU - Berven, C.

AU - Ramasubramaniam, R.

AU - Goodnick, S. M.

PY - 1996

Y1 - 1996

N2 - We discuss the appearance of strong nonlinearities including S-type negative differential conductance in the I-V characteristics of quantum point contact (QPC) structures. Time-dependent measurements demonstrate that the highly nonlinear d.c. I-V features are associated with a temporal average of random telegraph switching (RTS) between different current levels. The RTS is only observed when the voltage across the device is such that the chemical potential on one side of the QPC is aligned with the bottom of a one-dimensional subband in the QPC. As the chemical potential is moved further into the subband, the switching behavior disappears until the next subband minimum is reached.

AB - We discuss the appearance of strong nonlinearities including S-type negative differential conductance in the I-V characteristics of quantum point contact (QPC) structures. Time-dependent measurements demonstrate that the highly nonlinear d.c. I-V features are associated with a temporal average of random telegraph switching (RTS) between different current levels. The RTS is only observed when the voltage across the device is such that the chemical potential on one side of the QPC is aligned with the bottom of a one-dimensional subband in the QPC. As the chemical potential is moved further into the subband, the switching behavior disappears until the next subband minimum is reached.

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DO - 10.1006/spmi.1996.0098

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JO - Superlattices and Microstructures

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Instabilities in quantum point contact structures

Abstract

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