Input Power Induced Thermal Effects Related to Transition Time Between Avalanche and Second Breakdown in p-n Silicon Junctions

D. K. FERRY, A. A. DOUGAL

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The dependence of the transition time between avalanche breakdown and second breakdown on the input power to a p-n junction was studied both in transistor configurations and in single junction structures. The transition time is observed to decrease with increased input power. The dependence of the transition time on the input power indicates a constant input energy for which second breakdown occurs. The effect the thermal heating may have on conduction in a junction is also considered. The constant energy required and related occurrence of melt channels in the junction region are felt to support the thermal hypothesis.

Original languageEnglish (US)
Pages (from-to)627-629
Number of pages3
JournalIEEE Transactions on Electron Devices
VolumeED-13
Issue number8/9
DOIs
StatePublished - 1966
Externally publishedYes

Fingerprint

Silicon
Thermal effects
Transistors
Heating
Hot Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Input Power Induced Thermal Effects Related to Transition Time Between Avalanche and Second Breakdown in p-n Silicon Junctions. / FERRY, D. K.; DOUGAL, A. A.

In: IEEE Transactions on Electron Devices, Vol. ED-13, No. 8/9, 1966, p. 627-629.

Research output: Contribution to journalArticle

@article{446cda4cedc942d09ad0cea3fbba69c8,
title = "Input Power Induced Thermal Effects Related to Transition Time Between Avalanche and Second Breakdown in p-n Silicon Junctions",
abstract = "The dependence of the transition time between avalanche breakdown and second breakdown on the input power to a p-n junction was studied both in transistor configurations and in single junction structures. The transition time is observed to decrease with increased input power. The dependence of the transition time on the input power indicates a constant input energy for which second breakdown occurs. The effect the thermal heating may have on conduction in a junction is also considered. The constant energy required and related occurrence of melt channels in the junction region are felt to support the thermal hypothesis.",
author = "FERRY, {D. K.} and DOUGAL, {A. A.}",
year = "1966",
doi = "10.1109/T-ED.1966.15748",
language = "English (US)",
volume = "ED-13",
pages = "627--629",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "8/9",

}

TY - JOUR

T1 - Input Power Induced Thermal Effects Related to Transition Time Between Avalanche and Second Breakdown in p-n Silicon Junctions

AU - FERRY, D. K.

AU - DOUGAL, A. A.

PY - 1966

Y1 - 1966

N2 - The dependence of the transition time between avalanche breakdown and second breakdown on the input power to a p-n junction was studied both in transistor configurations and in single junction structures. The transition time is observed to decrease with increased input power. The dependence of the transition time on the input power indicates a constant input energy for which second breakdown occurs. The effect the thermal heating may have on conduction in a junction is also considered. The constant energy required and related occurrence of melt channels in the junction region are felt to support the thermal hypothesis.

AB - The dependence of the transition time between avalanche breakdown and second breakdown on the input power to a p-n junction was studied both in transistor configurations and in single junction structures. The transition time is observed to decrease with increased input power. The dependence of the transition time on the input power indicates a constant input energy for which second breakdown occurs. The effect the thermal heating may have on conduction in a junction is also considered. The constant energy required and related occurrence of melt channels in the junction region are felt to support the thermal hypothesis.

UR - http://www.scopus.com/inward/record.url?scp=0038765747&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0038765747&partnerID=8YFLogxK

U2 - 10.1109/T-ED.1966.15748

DO - 10.1109/T-ED.1966.15748

M3 - Article

AN - SCOPUS:0038765747

VL - ED-13

SP - 627

EP - 629

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 8/9

ER -