Injection and doping dependence of SEM and scanning light spot diffusion length measurements in silicon power rectifiers

Physics & Astronomy

• rectifiers 81%
• diffusion length 69%
• injection 47%
• scanning electron microscopy 42%
• scanning 40%
• life (durability) 35%
• silicon 34%
• photocurrents 23%
• electron beams 18%
• electron probes 14%
• carrier lifetime 13%
• minority carriers 13%
• scanners 12%
• lasers 5%

Engineering & Materials Science

• Doping (additives) 72%
• Scanning electron microscopy 51%
• Silicon 51%
• Scanning 50%
• Photocurrents 37%
• Induced currents 32%
• Electron beams 30%
• Carrier lifetime 20%
• Electrons 13%
• Lasers 9%
• Experiments 4%

Chemical Compounds

• Surface Recombination 100%
• Electron Beam Induced Current 63%
• Diffusion 40%
• Length 38%
• Photocurrent 30%
• Velocity 27%
• Shape 10%
• Probe 9%
• Electron Particle 8%
• Surface 5%