Initial stages of epitaxial growth of GaAs on (100) silicon

D. K. Biegelsen, Fernando Ponce, A. J. Smith, J. C. Tramontana

Research output: Contribution to journalArticle

111 Citations (Scopus)

Abstract

Direct observations of early stages of molecular-beam epitaxial growth of GaAs on oriented and vicinal (100) Si surfaces are presented. Cross-sectional transmission electron microscopy and plan view scanning electron microscopy images directly reveal three-dimensional island growth for substrate temperatures above 300 °C. Island size, island spacing, surface morphology, and stacking fault defect spacing all increase with substrate temperature for fixed Ga and As fluxes. Below 300 °C, 7-nm-thick films are continuous and uniform. Films deposited on surfaces tilted from (100) coalesce anisotropically with respect to the tilt axis.

Original languageEnglish (US)
Pages (from-to)1856-1859
Number of pages4
JournalJournal of Applied Physics
Volume61
Issue number5
DOIs
StatePublished - 1987
Externally publishedYes

Fingerprint

silicon
spacing
crystal defects
molecular beams
thick films
transmission electron microscopy
scanning electron microscopy
temperature
defects

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Initial stages of epitaxial growth of GaAs on (100) silicon. / Biegelsen, D. K.; Ponce, Fernando; Smith, A. J.; Tramontana, J. C.

In: Journal of Applied Physics, Vol. 61, No. 5, 1987, p. 1856-1859.

Research output: Contribution to journalArticle

Biegelsen, DK, Ponce, F, Smith, AJ & Tramontana, JC 1987, 'Initial stages of epitaxial growth of GaAs on (100) silicon', Journal of Applied Physics, vol. 61, no. 5, pp. 1856-1859. https://doi.org/10.1063/1.338029
Biegelsen, D. K. ; Ponce, Fernando ; Smith, A. J. ; Tramontana, J. C. / Initial stages of epitaxial growth of GaAs on (100) silicon. In: Journal of Applied Physics. 1987 ; Vol. 61, No. 5. pp. 1856-1859.
@article{60f5a92f804d48fb811215be5bb5c5d3,
title = "Initial stages of epitaxial growth of GaAs on (100) silicon",
abstract = "Direct observations of early stages of molecular-beam epitaxial growth of GaAs on oriented and vicinal (100) Si surfaces are presented. Cross-sectional transmission electron microscopy and plan view scanning electron microscopy images directly reveal three-dimensional island growth for substrate temperatures above 300 °C. Island size, island spacing, surface morphology, and stacking fault defect spacing all increase with substrate temperature for fixed Ga and As fluxes. Below 300 °C, 7-nm-thick films are continuous and uniform. Films deposited on surfaces tilted from (100) coalesce anisotropically with respect to the tilt axis.",
author = "Biegelsen, {D. K.} and Fernando Ponce and Smith, {A. J.} and Tramontana, {J. C.}",
year = "1987",
doi = "10.1063/1.338029",
language = "English (US)",
volume = "61",
pages = "1856--1859",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "5",

}

TY - JOUR

T1 - Initial stages of epitaxial growth of GaAs on (100) silicon

AU - Biegelsen, D. K.

AU - Ponce, Fernando

AU - Smith, A. J.

AU - Tramontana, J. C.

PY - 1987

Y1 - 1987

N2 - Direct observations of early stages of molecular-beam epitaxial growth of GaAs on oriented and vicinal (100) Si surfaces are presented. Cross-sectional transmission electron microscopy and plan view scanning electron microscopy images directly reveal three-dimensional island growth for substrate temperatures above 300 °C. Island size, island spacing, surface morphology, and stacking fault defect spacing all increase with substrate temperature for fixed Ga and As fluxes. Below 300 °C, 7-nm-thick films are continuous and uniform. Films deposited on surfaces tilted from (100) coalesce anisotropically with respect to the tilt axis.

AB - Direct observations of early stages of molecular-beam epitaxial growth of GaAs on oriented and vicinal (100) Si surfaces are presented. Cross-sectional transmission electron microscopy and plan view scanning electron microscopy images directly reveal three-dimensional island growth for substrate temperatures above 300 °C. Island size, island spacing, surface morphology, and stacking fault defect spacing all increase with substrate temperature for fixed Ga and As fluxes. Below 300 °C, 7-nm-thick films are continuous and uniform. Films deposited on surfaces tilted from (100) coalesce anisotropically with respect to the tilt axis.

UR - http://www.scopus.com/inward/record.url?scp=0000943561&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000943561&partnerID=8YFLogxK

U2 - 10.1063/1.338029

DO - 10.1063/1.338029

M3 - Article

AN - SCOPUS:0000943561

VL - 61

SP - 1856

EP - 1859

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 5

ER -