INITIAL STAGES OF EPITAXIAL GROWTH OF GaAs ON (100) SILICON.

D. K. Biegelsen, F. A. Ponce, A. J. Smith, J. C. Tramontana

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

Direct observations of early stages of growth of GaAs on (100)Si are presented. Cross sectional TEM and plan view SEM images show three dimensional island growth, for growth above 300 degree C. Island size, island spacing, surface morphology and stacking fault defect spacing all decrease with substrate temperature for fixed Ga and As//2 fluxes. Below 300C, 7nm thick films are uniform. Diffusion-controlled growth kinetics are inferred.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposia Proceedings
PublisherMaterials Research Soc
Pages45-50
Number of pages6
ISBN (Print)0931837332, 9780931837333
DOIs
StatePublished - Jan 1 1986
Externally publishedYes

Publication series

NameMaterials Research Society Symposia Proceedings
Volume67
ISSN (Print)0272-9172

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Biegelsen, D. K., Ponce, F. A., Smith, A. J., & Tramontana, J. C. (1986). INITIAL STAGES OF EPITAXIAL GROWTH OF GaAs ON (100) SILICON. In Materials Research Society Symposia Proceedings (pp. 45-50). (Materials Research Society Symposia Proceedings; Vol. 67). Materials Research Soc. https://doi.org/10.1557/proc-67-45