Abstract
Direct observations of early stages of growth of GaAs on (100)Si are presented. Cross sectional TEM and plan view SEM images show three dimensional island growth, for growth above 300 degree C. Island size, island spacing, surface morphology and stacking fault defect spacing all decrease with substrate temperature for fixed Ga and As//2 fluxes. Below 300C, 7nm thick films are uniform. Diffusion-controlled growth kinetics are inferred.
| Original language | English (US) |
|---|---|
| Title of host publication | Materials Research Society Symposia Proceedings |
| Editors | John C.C. Fan, John M. Poate |
| Place of Publication | Pittsburgh, PA, USA |
| Publisher | Materials Research Soc |
| Pages | 45-50 |
| Number of pages | 6 |
| Volume | 67 |
| ISBN (Print) | 0931837332 |
| State | Published - 1986 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
Cite this
INITIAL STAGES OF EPITAXIAL GROWTH OF GaAs ON (100) SILICON. / Biegelsen, D. K.; Ponce, Fernando; Smith, A. J.; Tramontana, J. C.
Materials Research Society Symposia Proceedings. ed. / John C.C. Fan; John M. Poate. Vol. 67 Pittsburgh, PA, USA : Materials Research Soc, 1986. p. 45-50.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
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TY - GEN
T1 - INITIAL STAGES OF EPITAXIAL GROWTH OF GaAs ON (100) SILICON.
AU - Biegelsen, D. K.
AU - Ponce, Fernando
AU - Smith, A. J.
AU - Tramontana, J. C.
PY - 1986
Y1 - 1986
N2 - Direct observations of early stages of growth of GaAs on (100)Si are presented. Cross sectional TEM and plan view SEM images show three dimensional island growth, for growth above 300 degree C. Island size, island spacing, surface morphology and stacking fault defect spacing all decrease with substrate temperature for fixed Ga and As//2 fluxes. Below 300C, 7nm thick films are uniform. Diffusion-controlled growth kinetics are inferred.
AB - Direct observations of early stages of growth of GaAs on (100)Si are presented. Cross sectional TEM and plan view SEM images show three dimensional island growth, for growth above 300 degree C. Island size, island spacing, surface morphology and stacking fault defect spacing all decrease with substrate temperature for fixed Ga and As//2 fluxes. Below 300C, 7nm thick films are uniform. Diffusion-controlled growth kinetics are inferred.
UR - http://www.scopus.com/inward/record.url?scp=0022883618&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0022883618&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0022883618
SN - 0931837332
VL - 67
SP - 45
EP - 50
BT - Materials Research Society Symposia Proceedings
A2 - Fan, John C.C.
A2 - Poate, John M.
PB - Materials Research Soc
CY - Pittsburgh, PA, USA
ER -