INITIAL STAGES OF EPITAXIAL GROWTH OF GaAs ON (100) SILICON.

D. K. Biegelsen; F. A. Ponce; A. J. Smith; J. C. Tramontana

doi:10.1557/proc-67-45

INITIAL STAGES OF EPITAXIAL GROWTH OF GaAs ON (100) SILICON.

D. K. Biegelsen, F. A. Ponce, A. J. Smith, J. C. Tramontana

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

7 Scopus citations

Abstract

Direct observations of early stages of growth of GaAs on (100)Si are presented. Cross sectional TEM and plan view SEM images show three dimensional island growth, for growth above 300 degree C. Island size, island spacing, surface morphology and stacking fault defect spacing all decrease with substrate temperature for fixed Ga and As//2 fluxes. Below 300C, 7nm thick films are uniform. Diffusion-controlled growth kinetics are inferred.

Original language	English (US)
Title of host publication	Materials Research Society Symposia Proceedings
Publisher	Materials Research Soc
Pages	45-50
Number of pages	6
ISBN (Print)	0931837332, 9780931837333
DOIs	https://doi.org/10.1557/proc-67-45
State	Published - Jan 1 1986
Externally published	Yes

Publication series

Name	Materials Research Society Symposia Proceedings
Volume	67
ISSN (Print)	0272-9172

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "INITIAL STAGES OF EPITAXIAL GROWTH OF GaAs ON (100) SILICON.",

abstract = "Direct observations of early stages of growth of GaAs on (100)Si are presented. Cross sectional TEM and plan view SEM images show three dimensional island growth, for growth above 300 degree C. Island size, island spacing, surface morphology and stacking fault defect spacing all decrease with substrate temperature for fixed Ga and As//2 fluxes. Below 300C, 7nm thick films are uniform. Diffusion-controlled growth kinetics are inferred.",

author = "Biegelsen, {D. K.} and Ponce, {F. A.} and Smith, {A. J.} and Tramontana, {J. C.}",

year = "1986",

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doi = "10.1557/proc-67-45",

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T1 - INITIAL STAGES OF EPITAXIAL GROWTH OF GaAs ON (100) SILICON.

AU - Biegelsen, D. K.

AU - Ponce, F. A.

AU - Smith, A. J.

AU - Tramontana, J. C.

PY - 1986/1/1

Y1 - 1986/1/1

N2 - Direct observations of early stages of growth of GaAs on (100)Si are presented. Cross sectional TEM and plan view SEM images show three dimensional island growth, for growth above 300 degree C. Island size, island spacing, surface morphology and stacking fault defect spacing all decrease with substrate temperature for fixed Ga and As//2 fluxes. Below 300C, 7nm thick films are uniform. Diffusion-controlled growth kinetics are inferred.

AB - Direct observations of early stages of growth of GaAs on (100)Si are presented. Cross sectional TEM and plan view SEM images show three dimensional island growth, for growth above 300 degree C. Island size, island spacing, surface morphology and stacking fault defect spacing all decrease with substrate temperature for fixed Ga and As//2 fluxes. Below 300C, 7nm thick films are uniform. Diffusion-controlled growth kinetics are inferred.

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M3 - Conference contribution

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BT - Materials Research Society Symposia Proceedings

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ER -

INITIAL STAGES OF EPITAXIAL GROWTH OF GaAs ON (100) SILICON.

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