INITIAL STAGES OF EPITAXIAL GROWTH OF GaAs ON (100) SILICON.

D. K. Biegelsen, Fernando Ponce, A. J. Smith, J. C. Tramontana

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

Direct observations of early stages of growth of GaAs on (100)Si are presented. Cross sectional TEM and plan view SEM images show three dimensional island growth, for growth above 300 degree C. Island size, island spacing, surface morphology and stacking fault defect spacing all decrease with substrate temperature for fixed Ga and As//2 fluxes. Below 300C, 7nm thick films are uniform. Diffusion-controlled growth kinetics are inferred.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposia Proceedings
EditorsJohn C.C. Fan, John M. Poate
Place of PublicationPittsburgh, PA, USA
PublisherMaterials Research Soc
Pages45-50
Number of pages6
Volume67
ISBN (Print)0931837332
StatePublished - 1986
Externally publishedYes

Fingerprint

Epitaxial growth
Growth kinetics
Stacking faults
Thick films
Surface morphology
Fluxes
Transmission electron microscopy
Defects
Scanning electron microscopy
Substrates
gallium arsenide
Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Biegelsen, D. K., Ponce, F., Smith, A. J., & Tramontana, J. C. (1986). INITIAL STAGES OF EPITAXIAL GROWTH OF GaAs ON (100) SILICON. In J. C. C. Fan, & J. M. Poate (Eds.), Materials Research Society Symposia Proceedings (Vol. 67, pp. 45-50). Pittsburgh, PA, USA: Materials Research Soc.

INITIAL STAGES OF EPITAXIAL GROWTH OF GaAs ON (100) SILICON. / Biegelsen, D. K.; Ponce, Fernando; Smith, A. J.; Tramontana, J. C.

Materials Research Society Symposia Proceedings. ed. / John C.C. Fan; John M. Poate. Vol. 67 Pittsburgh, PA, USA : Materials Research Soc, 1986. p. 45-50.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Biegelsen, DK, Ponce, F, Smith, AJ & Tramontana, JC 1986, INITIAL STAGES OF EPITAXIAL GROWTH OF GaAs ON (100) SILICON. in JCC Fan & JM Poate (eds), Materials Research Society Symposia Proceedings. vol. 67, Materials Research Soc, Pittsburgh, PA, USA, pp. 45-50.
Biegelsen DK, Ponce F, Smith AJ, Tramontana JC. INITIAL STAGES OF EPITAXIAL GROWTH OF GaAs ON (100) SILICON. In Fan JCC, Poate JM, editors, Materials Research Society Symposia Proceedings. Vol. 67. Pittsburgh, PA, USA: Materials Research Soc. 1986. p. 45-50
Biegelsen, D. K. ; Ponce, Fernando ; Smith, A. J. ; Tramontana, J. C. / INITIAL STAGES OF EPITAXIAL GROWTH OF GaAs ON (100) SILICON. Materials Research Society Symposia Proceedings. editor / John C.C. Fan ; John M. Poate. Vol. 67 Pittsburgh, PA, USA : Materials Research Soc, 1986. pp. 45-50
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