Abstract
The initial reactions at the interface of Pt on a-Si:H are probed by interference enhanced Raman scattering, TEM, and Auger, and the atomic structural changes are correlated with electrical properties determined from current-voltage and internal photoemission measurements. It is shown that a disordered Pt-Si intermixed phase of less than 20 A thick exists at the interface immediately after deposition, and this phase grows thicker with annealing to 150 degree C. Annealing at 200 degree C causes the nucleation of crystalline silicide phases. The Schottky diodes exhibit rectification over greater than ten orders of magnitude of current density. Initially, the as-deposited diodes exhibit an ideality parameter of approximately 1. 11. Subsequently, the value drops to 1. 04 as the silicide develops. Internal photoemission results indicate deviations from expected behavior.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 519-523 |
| Number of pages | 5 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 1 |
| Issue number | 3 |
| DOIs | |
| State | Published - Jan 1 1983 |
| Externally published | Yes |
| Event | Proc of the Annu Conf on the Phys and Chem of Semicond Interfaces, 10th - Santa Fe, NM, USA Duration: Jan 25 1983 → Jan 27 1983 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering