INITIAL REACTIONS AT THE INTERFACE OF Pt AND AMORPHOUS SILICON.

R. J. Nemanich, M. J. Thompson, Warren B. Jackson, C. C. Tsai, B. L. Stafford

Research output: Contribution to journalConference article

22 Scopus citations

Abstract

The initial reactions at the interface of Pt on a-Si:H are probed by interference enhanced Raman scattering, TEM, and Auger, and the atomic structural changes are correlated with electrical properties determined from current-voltage and internal photoemission measurements. It is shown that a disordered Pt-Si intermixed phase of less than 20 A thick exists at the interface immediately after deposition, and this phase grows thicker with annealing to 150 degree C. Annealing at 200 degree C causes the nucleation of crystalline silicide phases. The Schottky diodes exhibit rectification over greater than ten orders of magnitude of current density. Initially, the as-deposited diodes exhibit an ideality parameter of approximately 1. 11. Subsequently, the value drops to 1. 04 as the silicide develops. Internal photoemission results indicate deviations from expected behavior.

Original languageEnglish (US)
Pages (from-to)519-523
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume1
Issue number3
DOIs
StatePublished - Jan 1 1983
Externally publishedYes
EventProc of the Annu Conf on the Phys and Chem of Semicond Interfaces, 10th - Santa Fe, NM, USA
Duration: Jan 25 1983Jan 27 1983

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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