InGaN/GaN multiple-quantum-well light-emitting diodes grown on Si(111) substrates with ZrB 2(0001) buffer layers

Adam H. Blake; Derek Caselli; Christopher Durot; Jason Mueller; Eduardo Parra; Joseph Gilgen; Allison Boley; David Smith; Ignatius S T Tsong; John C. Roberts; Edwin Piner; Kevin Linthicum; James W. Cook; Daniel D. Koleske; Mary H. Crawford; Arthur J. Fischer

doi:10.1063/1.3684557

InGaN/GaN multiple-quantum-well light-emitting diodes grown on Si(111) substrates with ZrB ₂(0001) buffer layers

Adam H. Blake, Derek Caselli, Christopher Durot, Jason Mueller, Eduardo Parra, Joseph Gilgen, Allison Boley, David Smith, Ignatius S T Tsong, John C. Roberts, Edwin Piner, Kevin Linthicum, James W. Cook, Daniel D. Koleske, Mary H. Crawford, Arthur J. Fischer

Research output: Contribution to journal › Article

26 Scopus citations

Abstract

Multiple-quantum-well light-emitting diode (LED) structures of InGaN/GaN were grown by metalorganic chemical vapor deposition on Si(111) substrates via ZrB ₂(0001) buffer layers and a GaN template comprising composite Al _xGa _1-xN (where x lies in the range from 0 to 1) transition layers to minimize cracking due to thermal expansion mismatch between Si and GaN. Photoluminescence and electroluminescence results from the LED structures compared favorably with similar measurements obtained on identical LED structures grown on sapphire substrates. However, in spite of all the precautions taken, cracking was still present in the LED structures. Scanning electron microscopy and transmission electron microscopy in plan-view and cross-section geometries were conducted on the LED structures to examine the presence and the influence of various defects such as microvoids, micropipes, and threading dislocations on the mechanism of cracking. Our results suggest that the crack network propagates from microvoids on the surface of the LED structure. The formation of microvoids appears to originate from imperfections in the epitaxial ZrB ₂(0001) buffer layer.

Original language	English (US)
Article number	033107
Journal	Journal of Applied Physics
Volume	111
Issue number	3
DOIs	https://doi.org/10.1063/1.3684557
State	Published - Feb 1 2012

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1063/1.3684557

Fingerprint Dive into the research topics of 'InGaN/GaN multiple-quantum-well light-emitting diodes grown on Si(111) substrates with ZrB <sub>2</sub>(0001) buffer layers'. Together they form a unique fingerprint.

Cite this

Blake, A. H., Caselli, D., Durot, C., Mueller, J., Parra, E., Gilgen, J., Boley, A., Smith, D., Tsong, I. S. T., Roberts, J. C., Piner, E., Linthicum, K., Cook, J. W., Koleske, D. D., Crawford, M. H., & Fischer, A. J. (2012). InGaN/GaN multiple-quantum-well light-emitting diodes grown on Si(111) substrates with ZrB ₂(0001) buffer layers. Journal of Applied Physics, 111(3), [033107]. https://doi.org/10.1063/1.3684557

InGaN/GaN multiple-quantum-well light-emitting diodes grown on Si(111) substrates with ZrB ₂(0001) buffer layers. / Blake, Adam H.; Caselli, Derek; Durot, Christopher; Mueller, Jason; Parra, Eduardo; Gilgen, Joseph; Boley, Allison; Smith, David; Tsong, Ignatius S T; Roberts, John C.; Piner, Edwin; Linthicum, Kevin; Cook, James W.; Koleske, Daniel D.; Crawford, Mary H.; Fischer, Arthur J.

In: Journal of Applied Physics, Vol. 111, No. 3, 033107, 01.02.2012.

Research output: Contribution to journal › Article

Blake, AH, Caselli, D, Durot, C, Mueller, J, Parra, E, Gilgen, J, Boley, A, Smith, D, Tsong, IST, Roberts, JC, Piner, E, Linthicum, K, Cook, JW, Koleske, DD, Crawford, MH & Fischer, AJ 2012, 'InGaN/GaN multiple-quantum-well light-emitting diodes grown on Si(111) substrates with ZrB ₂(0001) buffer layers', Journal of Applied Physics, vol. 111, no. 3, 033107. https://doi.org/10.1063/1.3684557

Blake, Adam H. ; Caselli, Derek ; Durot, Christopher ; Mueller, Jason ; Parra, Eduardo ; Gilgen, Joseph ; Boley, Allison ; Smith, David ; Tsong, Ignatius S T ; Roberts, John C. ; Piner, Edwin ; Linthicum, Kevin ; Cook, James W. ; Koleske, Daniel D. ; Crawford, Mary H. ; Fischer, Arthur J. / InGaN/GaN multiple-quantum-well light-emitting diodes grown on Si(111) substrates with ZrB ₂(0001) buffer layers. In: Journal of Applied Physics. 2012 ; Vol. 111, No. 3.

@article{24d79fa0ac81484eb315a709c86c5178,

title = "InGaN/GaN multiple-quantum-well light-emitting diodes grown on Si(111) substrates with ZrB 2(0001) buffer layers",

abstract = "Multiple-quantum-well light-emitting diode (LED) structures of InGaN/GaN were grown by metalorganic chemical vapor deposition on Si(111) substrates via ZrB 2(0001) buffer layers and a GaN template comprising composite Al xGa 1-xN (where x lies in the range from 0 to 1) transition layers to minimize cracking due to thermal expansion mismatch between Si and GaN. Photoluminescence and electroluminescence results from the LED structures compared favorably with similar measurements obtained on identical LED structures grown on sapphire substrates. However, in spite of all the precautions taken, cracking was still present in the LED structures. Scanning electron microscopy and transmission electron microscopy in plan-view and cross-section geometries were conducted on the LED structures to examine the presence and the influence of various defects such as microvoids, micropipes, and threading dislocations on the mechanism of cracking. Our results suggest that the crack network propagates from microvoids on the surface of the LED structure. The formation of microvoids appears to originate from imperfections in the epitaxial ZrB 2(0001) buffer layer.",

author = "Blake, {Adam H.} and Derek Caselli and Christopher Durot and Jason Mueller and Eduardo Parra and Joseph Gilgen and Allison Boley and David Smith and Tsong, {Ignatius S T} and Roberts, {John C.} and Edwin Piner and Kevin Linthicum and Cook, {James W.} and Koleske, {Daniel D.} and Crawford, {Mary H.} and Fischer, {Arthur J.}",

year = "2012",

month = feb,

day = "1",

doi = "10.1063/1.3684557",

language = "English (US)",

volume = "111",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "3",

}

TY - JOUR

T1 - InGaN/GaN multiple-quantum-well light-emitting diodes grown on Si(111) substrates with ZrB 2(0001) buffer layers

AU - Blake, Adam H.

AU - Caselli, Derek

AU - Durot, Christopher

AU - Mueller, Jason

AU - Parra, Eduardo

AU - Gilgen, Joseph

AU - Boley, Allison

AU - Smith, David

AU - Tsong, Ignatius S T

AU - Roberts, John C.

AU - Piner, Edwin

AU - Linthicum, Kevin

AU - Cook, James W.

AU - Koleske, Daniel D.

AU - Crawford, Mary H.

AU - Fischer, Arthur J.

PY - 2012/2/1

Y1 - 2012/2/1

N2 - Multiple-quantum-well light-emitting diode (LED) structures of InGaN/GaN were grown by metalorganic chemical vapor deposition on Si(111) substrates via ZrB 2(0001) buffer layers and a GaN template comprising composite Al xGa 1-xN (where x lies in the range from 0 to 1) transition layers to minimize cracking due to thermal expansion mismatch between Si and GaN. Photoluminescence and electroluminescence results from the LED structures compared favorably with similar measurements obtained on identical LED structures grown on sapphire substrates. However, in spite of all the precautions taken, cracking was still present in the LED structures. Scanning electron microscopy and transmission electron microscopy in plan-view and cross-section geometries were conducted on the LED structures to examine the presence and the influence of various defects such as microvoids, micropipes, and threading dislocations on the mechanism of cracking. Our results suggest that the crack network propagates from microvoids on the surface of the LED structure. The formation of microvoids appears to originate from imperfections in the epitaxial ZrB 2(0001) buffer layer.

AB - Multiple-quantum-well light-emitting diode (LED) structures of InGaN/GaN were grown by metalorganic chemical vapor deposition on Si(111) substrates via ZrB 2(0001) buffer layers and a GaN template comprising composite Al xGa 1-xN (where x lies in the range from 0 to 1) transition layers to minimize cracking due to thermal expansion mismatch between Si and GaN. Photoluminescence and electroluminescence results from the LED structures compared favorably with similar measurements obtained on identical LED structures grown on sapphire substrates. However, in spite of all the precautions taken, cracking was still present in the LED structures. Scanning electron microscopy and transmission electron microscopy in plan-view and cross-section geometries were conducted on the LED structures to examine the presence and the influence of various defects such as microvoids, micropipes, and threading dislocations on the mechanism of cracking. Our results suggest that the crack network propagates from microvoids on the surface of the LED structure. The formation of microvoids appears to originate from imperfections in the epitaxial ZrB 2(0001) buffer layer.

UR - http://www.scopus.com/inward/record.url?scp=84863134801&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863134801&partnerID=8YFLogxK

U2 - 10.1063/1.3684557

DO - 10.1063/1.3684557

M3 - Article

AN - SCOPUS:84863134801

VL - 111

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 3

M1 - 033107

ER -