InGaN solar cell design by surface inversion caused by piezoelectric polarization

Balakrishnam Jampana, Andrew Melton, Muhammad Jamil, Ian Ferguson, Robert Opila, Christiana Honsberg

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

The III-nitride material system offers substantial potential to develop high-efficiency solar cells. The solar cell operation requires the formation of a depletion region. Conventionally, this is achieved by a p-n junction. The piezoelectric polarization introduces a strong band bending at the hetero-junction interface and hence creating a depletion region. The growth of a thin AlN or GaN epi-layer on InGaN introduces the required piezoelectric polarization to create a depletion region. This paper presents the polarization-incorporated simulations in "Silense" showing the depletion region formation by GaN or AlN epilayers on p-InGaN. Three structures are then MOCVD grown and characterized for crystal quality and electrical properties. The fabricated devices demonstrated the diode characteristics with an open-circuit voltages > 2.0 V.

Original languageEnglish (US)
Title of host publication2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Pages2179-2182
Number of pages4
DOIs
StatePublished - Dec 1 2009
Event2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 - Philadelphia, PA, United States
Duration: Jun 7 2009Jun 12 2009

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
CountryUnited States
CityPhiladelphia, PA
Period6/7/096/12/09

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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