InGaN solar cell design by surface inversion caused by piezoelectric polarization

Balakrishnam Jampana; Andrew Melton; Muhammad Jamil; Ian Ferguson; Robert Opila; Christiana Honsberg

doi:10.1109/PVSC.2009.5411402

InGaN solar cell design by surface inversion caused by piezoelectric polarization

Balakrishnam Jampana, Andrew Melton, Muhammad Jamil, Ian Ferguson, Robert Opila, Christiana Honsberg

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

The III-nitride material system offers substantial potential to develop high-efficiency solar cells. The solar cell operation requires the formation of a depletion region. Conventionally, this is achieved by a p-n junction. The piezoelectric polarization introduces a strong band bending at the hetero-junction interface and hence creating a depletion region. The growth of a thin AlN or GaN epi-layer on InGaN introduces the required piezoelectric polarization to create a depletion region. This paper presents the polarization-incorporated simulations in "Silense" showing the depletion region formation by GaN or AlN epilayers on p-InGaN. Three structures are then MOCVD grown and characterized for crystal quality and electrical properties. The fabricated devices demonstrated the diode characteristics with an open-circuit voltages > 2.0 V.

Original language	English (US)
Title of host publication	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Pages	2179-2182
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.2009.5411402
State	Published - 2009
Event	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 - Philadelphia, PA, United States Duration: Jun 7 2009 → Jun 12 2009

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Other

Other	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Country/Territory	United States
City	Philadelphia, PA
Period	6/7/09 → 6/12/09

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

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10.1109/PVSC.2009.5411402

Cite this

Jampana, B., Melton, A., Jamil, M., Ferguson, I., Opila, R., & Honsberg, C. (2009). InGaN solar cell design by surface inversion caused by piezoelectric polarization. In 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 (pp. 2179-2182). Article 5411402 (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2009.5411402

InGaN solar cell design by surface inversion caused by piezoelectric polarization. / Jampana, Balakrishnam; Melton, Andrew; Jamil, Muhammad et al.
2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009. 2009. p. 2179-2182 5411402 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Jampana, B, Melton, A, Jamil, M, Ferguson, I, Opila, R & Honsberg, C 2009, InGaN solar cell design by surface inversion caused by piezoelectric polarization. in 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009., 5411402, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 2179-2182, 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009, Philadelphia, PA, United States, 6/7/09. https://doi.org/10.1109/PVSC.2009.5411402

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abstract = "The III-nitride material system offers substantial potential to develop high-efficiency solar cells. The solar cell operation requires the formation of a depletion region. Conventionally, this is achieved by a p-n junction. The piezoelectric polarization introduces a strong band bending at the hetero-junction interface and hence creating a depletion region. The growth of a thin AlN or GaN epi-layer on InGaN introduces the required piezoelectric polarization to create a depletion region. This paper presents the polarization-incorporated simulations in {"}Silense{"} showing the depletion region formation by GaN or AlN epilayers on p-InGaN. Three structures are then MOCVD grown and characterized for crystal quality and electrical properties. The fabricated devices demonstrated the diode characteristics with an open-circuit voltages > 2.0 V.",

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AU - Opila, Robert

AU - Honsberg, Christiana

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AB - The III-nitride material system offers substantial potential to develop high-efficiency solar cells. The solar cell operation requires the formation of a depletion region. Conventionally, this is achieved by a p-n junction. The piezoelectric polarization introduces a strong band bending at the hetero-junction interface and hence creating a depletion region. The growth of a thin AlN or GaN epi-layer on InGaN introduces the required piezoelectric polarization to create a depletion region. This paper presents the polarization-incorporated simulations in "Silense" showing the depletion region formation by GaN or AlN epilayers on p-InGaN. Three structures are then MOCVD grown and characterized for crystal quality and electrical properties. The fabricated devices demonstrated the diode characteristics with an open-circuit voltages > 2.0 V.

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InGaN solar cell design by surface inversion caused by piezoelectric polarization

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