InGaN-based solar cells for space applications

Yuji Zhao, Xuanqi Huang, Houqiang Fu, Hong Chen, Zhijian Lu, Jossue Montes, Izak Baranowski

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

III-nitrides InGaN solar cells have exhibited many favorable physical properties for space photovoltaic (PV) applications. Here we demonstrate the first nonpolar and semipolar InGaN/GaN multiple-quantum-well (MQW) solar cells grown on nonpolar m-plane and semipolar (2021) plane bulk GaN substrates. The optical properties and PV performance of these InGaN solar cells were systematically studied, including the absorption spectra, current density-voltage (J-V) characteristics, external quantum efficiency (EQE), and internal quantum efficiency (IQE). Overall nonpolar m-plane InGaN/GaN MQW solar cells demonstrated the best performance across all devices, with a high open-circuit voltage and the highest EQE and IQE. This huge difference is attributed to the better carrier transport and collection on nonpolar m-plane devices due to the reduced polarization effects, which were further confirmed by bias-dependent EQE measurements. Furthermore, high temperature measurements reveal that peak EQE values exceeds 80% at 500 °C and a positive thermal power coefficient up to 350 °C for nonpolar m-plane solar cells. These results demonstrate the high potential of nonpolar and semipolar InGaN solar cells for high temperature PV applications, which are required for space missions close to the sun.

Original languageEnglish (US)
Title of host publication2017 IEEE 60th International Midwest Symposium on Circuits and Systems, MWSCAS 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages954-957
Number of pages4
Volume2017-August
ISBN (Electronic)9781509063895
DOIs
StatePublished - Sep 27 2017
Event60th IEEE International Midwest Symposium on Circuits and Systems, MWSCAS 2017 - Boston, United States
Duration: Aug 6 2017Aug 9 2017

Other

Other60th IEEE International Midwest Symposium on Circuits and Systems, MWSCAS 2017
CountryUnited States
CityBoston
Period8/6/178/9/17

Fingerprint

Space applications
Quantum efficiency
Solar cells
Semiconductor quantum wells
Carrier transport
Open circuit voltage
Nitrides
Temperature measurement
Sun
Absorption spectra
Current density
Optical properties
Physical properties
Polarization
Electric potential
Substrates

Keywords

  • High temperature
  • III-V semiconductors
  • InGaN
  • Quantum wells
  • Solar cells

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Zhao, Y., Huang, X., Fu, H., Chen, H., Lu, Z., Montes, J., & Baranowski, I. (2017). InGaN-based solar cells for space applications. In 2017 IEEE 60th International Midwest Symposium on Circuits and Systems, MWSCAS 2017 (Vol. 2017-August, pp. 954-957). [8053083] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MWSCAS.2017.8053083

InGaN-based solar cells for space applications. / Zhao, Yuji; Huang, Xuanqi; Fu, Houqiang; Chen, Hong; Lu, Zhijian; Montes, Jossue; Baranowski, Izak.

2017 IEEE 60th International Midwest Symposium on Circuits and Systems, MWSCAS 2017. Vol. 2017-August Institute of Electrical and Electronics Engineers Inc., 2017. p. 954-957 8053083.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Zhao, Y, Huang, X, Fu, H, Chen, H, Lu, Z, Montes, J & Baranowski, I 2017, InGaN-based solar cells for space applications. in 2017 IEEE 60th International Midwest Symposium on Circuits and Systems, MWSCAS 2017. vol. 2017-August, 8053083, Institute of Electrical and Electronics Engineers Inc., pp. 954-957, 60th IEEE International Midwest Symposium on Circuits and Systems, MWSCAS 2017, Boston, United States, 8/6/17. https://doi.org/10.1109/MWSCAS.2017.8053083
Zhao Y, Huang X, Fu H, Chen H, Lu Z, Montes J et al. InGaN-based solar cells for space applications. In 2017 IEEE 60th International Midwest Symposium on Circuits and Systems, MWSCAS 2017. Vol. 2017-August. Institute of Electrical and Electronics Engineers Inc. 2017. p. 954-957. 8053083 https://doi.org/10.1109/MWSCAS.2017.8053083
Zhao, Yuji ; Huang, Xuanqi ; Fu, Houqiang ; Chen, Hong ; Lu, Zhijian ; Montes, Jossue ; Baranowski, Izak. / InGaN-based solar cells for space applications. 2017 IEEE 60th International Midwest Symposium on Circuits and Systems, MWSCAS 2017. Vol. 2017-August Institute of Electrical and Electronics Engineers Inc., 2017. pp. 954-957
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abstract = "III-nitrides InGaN solar cells have exhibited many favorable physical properties for space photovoltaic (PV) applications. Here we demonstrate the first nonpolar and semipolar InGaN/GaN multiple-quantum-well (MQW) solar cells grown on nonpolar m-plane and semipolar (2021) plane bulk GaN substrates. The optical properties and PV performance of these InGaN solar cells were systematically studied, including the absorption spectra, current density-voltage (J-V) characteristics, external quantum efficiency (EQE), and internal quantum efficiency (IQE). Overall nonpolar m-plane InGaN/GaN MQW solar cells demonstrated the best performance across all devices, with a high open-circuit voltage and the highest EQE and IQE. This huge difference is attributed to the better carrier transport and collection on nonpolar m-plane devices due to the reduced polarization effects, which were further confirmed by bias-dependent EQE measurements. Furthermore, high temperature measurements reveal that peak EQE values exceeds 80{\%} at 500 °C and a positive thermal power coefficient up to 350 °C for nonpolar m-plane solar cells. These results demonstrate the high potential of nonpolar and semipolar InGaN solar cells for high temperature PV applications, which are required for space missions close to the sun.",
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