Abstract

InGaAs/GaAs multiple quantum well structures were grown by molecular beam epitaxy with a variation in deposition temperature among the samples to change crystal and physical properties. High resolution x-ray diffraction and transmission electron microscopy were utilized to probe crystal properties, whereas photoluminescence spectroscopy evaluated optical response. An optimal growth temperature Tdep = 505°C was found for 20% In composition. The density of 60° dislocation loops increased continuously at lower growth temperatures and reduced crystal perfection. Elevated deposition temperatures led to In decay in the structures and manifested in different crystalline defects with a rather isotropic distribution and no lateral ordering, as well as a growth surface instability against perturbations.

Original languageEnglish (US)
Title of host publication2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages660-665
Number of pages6
ISBN (Electronic)9781479943982
DOIs
StatePublished - Oct 15 2014
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: Jun 8 2014Jun 13 2014

Publication series

Name2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

Other

Other40th IEEE Photovoltaic Specialist Conference, PVSC 2014
CountryUnited States
CityDenver
Period6/8/146/13/14

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Keywords

  • HRXRD
  • InGaAs
  • MBE
  • MQW Solar Cells
  • photoluminescence

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Karow, M. M., Faleev, N. N., Ning, C-Z., Smith, D., & Honsberg, C. (2014). InGaAs/GaAs MQWs: Correlation of crystal and physical properties. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (pp. 660-665). [6925008] (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2014.6925008