@inproceedings{eb4b40962b4d44d69520cca9875293e1,
title = "InGaAs/GaAs MQWs: Correlation of crystal and physical properties",
abstract = "InGaAs/GaAs multiple quantum well structures were grown by molecular beam epitaxy with a variation in deposition temperature among the samples to change crystal and physical properties. High resolution x-ray diffraction and transmission electron microscopy were utilized to probe crystal properties, whereas photoluminescence spectroscopy evaluated optical response. An optimal growth temperature Tdep = 505°C was found for 20% In composition. The density of 60° dislocation loops increased continuously at lower growth temperatures and reduced crystal perfection. Elevated deposition temperatures led to In decay in the structures and manifested in different crystalline defects with a rather isotropic distribution and no lateral ordering, as well as a growth surface instability against perturbations.",
keywords = "HRXRD, InGaAs, MBE, MQW Solar Cells, photoluminescence",
author = "Karow, {Matthias M.} and Faleev, {Nikolai N.} and Cun-Zheng Ning and David Smith and Christiana Honsberg",
note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 40th IEEE Photovoltaic Specialist Conference, PVSC 2014 ; Conference date: 08-06-2014 Through 13-06-2014",
year = "2014",
month = oct,
day = "15",
doi = "10.1109/PVSC.2014.6925008",
language = "English (US)",
series = "2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "660--665",
booktitle = "2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014",
}