Infrared light-induced beating of Shubnikov-de Haas oscillations in MBE grown InAs/AlSb quantum wells

Yu G. Sadofyev; A. Ramamoorthy; J. P. Bird; Shane Johnson; Yong-Hang Zhang

doi:10.1016/j.jcrysgro.2004.12.123

Infrared light-induced beating of Shubnikov-de Haas oscillations in MBE grown InAs/AlSb quantum wells

Yu G. Sadofyev, A. Ramamoorthy, J. P. Bird, Shane Johnson, Yong-Hang Zhang

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

Magnetotransport measurements on a high-quality InAs/GaSb quantum well show single-period Shubnikov-de Haas (SdH) oscillations at low magnetic fields under dark conditions after initial sample cool down to 4.2 K. However, during and after illumination of the sample with infrared light, a beating pattern is observed in the SdH oscillations, indicating the possible appearance of two sets of Landau levels at low fields. Furthermore, for each condition, the original oscillation pattern persists under the application of a positive (or negative) backgate voltage that increases (or decreases) the two-dimensional electron gas density.

Original language	English (US)
Pages (from-to)	661-665
Number of pages	5
Journal	Journal of Crystal Growth
Volume	278
Issue number	1-4
DOIs	https://doi.org/10.1016/j.jcrysgro.2004.12.123
State	Published - May 1 2005
Event	13th International Conference on Molecular Beam Epitaxy - Duration: Aug 22 2004 → Aug 27 2004

Keywords

A3. Molecular beam epitaxy
B1. Antimonides
B2. Semiconducting III-V materials

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2004.12.123

Cite this

@article{ebb1bd6e1fa84dda82ad8664a0848eac,

title = "Infrared light-induced beating of Shubnikov-de Haas oscillations in MBE grown InAs/AlSb quantum wells",

abstract = "Magnetotransport measurements on a high-quality InAs/GaSb quantum well show single-period Shubnikov-de Haas (SdH) oscillations at low magnetic fields under dark conditions after initial sample cool down to 4.2 K. However, during and after illumination of the sample with infrared light, a beating pattern is observed in the SdH oscillations, indicating the possible appearance of two sets of Landau levels at low fields. Furthermore, for each condition, the original oscillation pattern persists under the application of a positive (or negative) backgate voltage that increases (or decreases) the two-dimensional electron gas density.",

keywords = "A3. Molecular beam epitaxy, B1. Antimonides, B2. Semiconducting III-V materials",

author = "Sadofyev, {Yu G.} and A. Ramamoorthy and Bird, {J. P.} and Shane Johnson and Yong-Hang Zhang",

year = "2005",

month = may,

day = "1",

doi = "10.1016/j.jcrysgro.2004.12.123",

language = "English (US)",

volume = "278",

pages = "661--665",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1-4",

note = "13th International Conference on Molecular Beam Epitaxy ; Conference date: 22-08-2004 Through 27-08-2004",

}

TY - JOUR

T1 - Infrared light-induced beating of Shubnikov-de Haas oscillations in MBE grown InAs/AlSb quantum wells

AU - Sadofyev, Yu G.

AU - Ramamoorthy, A.

AU - Bird, J. P.

AU - Johnson, Shane

AU - Zhang, Yong-Hang

PY - 2005/5/1

Y1 - 2005/5/1

N2 - Magnetotransport measurements on a high-quality InAs/GaSb quantum well show single-period Shubnikov-de Haas (SdH) oscillations at low magnetic fields under dark conditions after initial sample cool down to 4.2 K. However, during and after illumination of the sample with infrared light, a beating pattern is observed in the SdH oscillations, indicating the possible appearance of two sets of Landau levels at low fields. Furthermore, for each condition, the original oscillation pattern persists under the application of a positive (or negative) backgate voltage that increases (or decreases) the two-dimensional electron gas density.

AB - Magnetotransport measurements on a high-quality InAs/GaSb quantum well show single-period Shubnikov-de Haas (SdH) oscillations at low magnetic fields under dark conditions after initial sample cool down to 4.2 K. However, during and after illumination of the sample with infrared light, a beating pattern is observed in the SdH oscillations, indicating the possible appearance of two sets of Landau levels at low fields. Furthermore, for each condition, the original oscillation pattern persists under the application of a positive (or negative) backgate voltage that increases (or decreases) the two-dimensional electron gas density.

KW - A3. Molecular beam epitaxy

KW - B1. Antimonides

KW - B2. Semiconducting III-V materials

UR - http://www.scopus.com/inward/record.url?scp=18444366784&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=18444366784&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2004.12.123

DO - 10.1016/j.jcrysgro.2004.12.123

M3 - Conference article

AN - SCOPUS:18444366784

SN - 0022-0248

VL - 278

SP - 661

EP - 665

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

T2 - 13th International Conference on Molecular Beam Epitaxy

Y2 - 22 August 2004 through 27 August 2004

ER -

Infrared light-induced beating of Shubnikov-de Haas oscillations in MBE grown InAs/AlSb quantum wells

Abstract

Keywords

ASJC Scopus subject areas

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