The population of the unconfined states, with energies above the band edge of the barrier layers, can be significant in some regions of the active volume in high power lasers and amplifiers. This paper analyzes the influences of these states on optical properties, such as gain, refractive index, differential gain, and linewidth enhancement factor, for different quantum-well (QW) structures. Our results show that at high excitation levels, the unconfined band contributions to the real part of the optical susceptibility can be significant, especially in structures with weak quantum confinement potentials. This is in agreement with recent measurements of peak gain and carrier-induced refractive index change versus carrier density, for InGaAs-GaAs QW laser structures.
|Original language||English (US)|
|Number of pages||7|
|Journal||IEEE Journal on Selected Topics in Quantum Electronics|
|State||Published - Apr 1 1997|
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering