@article{61dd40f1dd254a2bb5df9d4fde5f4872,
title = "Influences of unconfined states on the optical properties of quantum-well structures",
abstract = "The population of the unconfined states, with energies above the band edge of the barrier layers, can be significant in some regions of the active volume in high power lasers and amplifiers. This paper analyzes the influences of these states on optical properties, such as gain, refractive index, differential gain, and linewidth enhancement factor, for different quantum-well (QW) structures. Our results show that at high excitation levels, the unconfined band contributions to the real part of the optical susceptibility can be significant, especially in structures with weak quantum confinement potentials. This is in agreement with recent measurements of peak gain and carrier-induced refractive index change versus carrier density, for InGaAs-GaAs QW laser structures.",
author = "Cun-Zheng Ning and Chow, {W. W.} and Bossert, {David J.} and Indik, {R. A.} and Moloney, {J. V.}",
note = "Funding Information: Manuscript received August 29, 1996; revised February 20, 1997. This work was supported by the Air Force Office of Scientific Research, Air Force Materiel Command, USAF, under Contract AFSOR F49620-94-1-0144 DEF, and by the U.S. Department of Energy under Contract DE-AC04-94AL8500. C.-Z. Ning was with the Arizona Center for Mathematical Sciences, University of Arizona, Tucson, AZ 85721 USA. He is now with NASA Ames Research Center, T27A-1, Moffett Field, CA 94035 USA. W. W. Chow is with Sandia National Laboratories, Albuquerque, NM 87185-0601 USA. D. J. Bossert is with U.S. Air Force Phillips Laboratories, Kirtland Air Force Base, NM 87117 USA. R. A. Indik and J. V. Moloney are with the Arizona Center for Mathematical Sciences, University of Arizona, Tucson, AZ 85721 USA. Publisher Item Identifier S 1077-260X(97)04507-3.",
year = "1997",
month = apr,
doi = "10.1109/2944.605642",
language = "English (US)",
volume = "3",
pages = "129--135",
journal = "IEEE Journal on Selected Topics in Quantum Electronics",
issn = "1077-260X",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "2",
}