Abstract
A full-band electron transport calculation in wurtzite phase GaN based on an accurate model of electron-phonon interactions using a rigid pseudo-ion model is reported. The calculated deformation potentials are used to estimate the scattering rate in a cellular Monte Carlo (CMC) simulator. Longitudinal optical (LO)-like and transverse optical (TO)-like polar optical phonon scatterings are also employed in this work. The calculated velocity is lower than the previous works which used fixed deformation potentials.
Original language | English (US) |
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Pages (from-to) | S475-S477 |
Journal | Semiconductor Science and Technology |
Volume | 19 |
Issue number | 4 SPEC. ISS. |
DOIs | |
State | Published - Apr 1 2004 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry