Influence of the electron-phonon interaction on electron transport in wurtzite GaN

Shinya Yamakawa, Shela Aboud, Marco Saraniti, Stephen Goodnick

Research output: Contribution to journalArticlepeer-review

29 Scopus citations

Abstract

A full-band electron transport calculation in wurtzite phase GaN based on an accurate model of electron-phonon interactions using a rigid pseudo-ion model is reported. The calculated deformation potentials are used to estimate the scattering rate in a cellular Monte Carlo (CMC) simulator. Longitudinal optical (LO)-like and transverse optical (TO)-like polar optical phonon scatterings are also employed in this work. The calculated velocity is lower than the previous works which used fixed deformation potentials.

Original languageEnglish (US)
Pages (from-to)S475-S477
JournalSemiconductor Science and Technology
Volume19
Issue number4 SPEC. ISS.
DOIs
StatePublished - Apr 1 2004

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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