Aluminum doped ZnTe epitaxial layers have been grown on GaSb substrates by molecular beam epitaxy under different Te/Zn flux ratios, while the flux ratio is varied by keeping Te flux constant and changing Zn flux. The Te/Zn flux ratio ∼0.9 leads to the narrowest full width at half maximum of x-ray diffraction rocking curve. Indium deposition is applied to improve the contact conductivity, characterized by current-voltage measurements. The effect of annealing in forming gas (5% H 2+ 95% Ar) has been studied and the secondary ion mass spectrometry results indicate Zn vacancies are suppressed in the order of 2 magnitudes by decreasing Te/Zn flux ratio from 2 to 0.5. This study assists the understanding and realization of effective n-type doping of ZnTe by the approach of suppressing Zn vacancies.
|Original language||English (US)|
|Number of pages||4|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|State||Published - Aug 1 2012|
- Flux ratio
ASJC Scopus subject areas
- Condensed Matter Physics