Influence of Te/Zn flux ratio on aluminium doped ZnTe grown by MBE on GaSb substrates

Qiang Zhang, Xinyu Liu, Michael J. Dinezza, Jin Fan, D. Ding, Jacek K. Furdyna, Yong-Hang Zhang

Research output: Contribution to journalArticle

Abstract

Aluminum doped ZnTe epitaxial layers have been grown on GaSb substrates by molecular beam epitaxy under different Te/Zn flux ratios, while the flux ratio is varied by keeping Te flux constant and changing Zn flux. The Te/Zn flux ratio ∼0.9 leads to the narrowest full width at half maximum of x-ray diffraction rocking curve. Indium deposition is applied to improve the contact conductivity, characterized by current-voltage measurements. The effect of annealing in forming gas (5% H 2+ 95% Ar) has been studied and the secondary ion mass spectrometry results indicate Zn vacancies are suppressed in the order of 2 magnitudes by decreasing Te/Zn flux ratio from 2 to 0.5. This study assists the understanding and realization of effective n-type doping of ZnTe by the approach of suppressing Zn vacancies.

Original languageEnglish (US)
Pages (from-to)1724-1727
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume9
Issue number8-9
DOIs
StatePublished - Aug 1 2012

Keywords

  • Flux ratio
  • GaSb
  • MBE
  • ZnTe

ASJC Scopus subject areas

  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Influence of Te/Zn flux ratio on aluminium doped ZnTe grown by MBE on GaSb substrates'. Together they form a unique fingerprint.

  • Cite this