Influence of Te/Zn flux ratio on aluminium doped ZnTe grown by MBE on GaSb substrates

Qiang Zhang; Xinyu Liu; Michael J. Dinezza; Jin Fan; D. Ding; Jacek K. Furdyna; Yong-Hang Zhang

doi:10.1002/pssc.201100764

Influence of Te/Zn flux ratio on aluminium doped ZnTe grown by MBE on GaSb substrates

Qiang Zhang, Xinyu Liu, Michael J. Dinezza, Jin Fan, D. Ding, Jacek K. Furdyna, Yong-Hang Zhang

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Abstract

Aluminum doped ZnTe epitaxial layers have been grown on GaSb substrates by molecular beam epitaxy under different Te/Zn flux ratios, while the flux ratio is varied by keeping Te flux constant and changing Zn flux. The Te/Zn flux ratio ∼0.9 leads to the narrowest full width at half maximum of x-ray diffraction rocking curve. Indium deposition is applied to improve the contact conductivity, characterized by current-voltage measurements. The effect of annealing in forming gas (5% H ₂+ 95% Ar) has been studied and the secondary ion mass spectrometry results indicate Zn vacancies are suppressed in the order of 2 magnitudes by decreasing Te/Zn flux ratio from 2 to 0.5. This study assists the understanding and realization of effective n-type doping of ZnTe by the approach of suppressing Zn vacancies.

Original language	English (US)
Pages (from-to)	1724-1727
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	9
Issue number	8-9
DOIs	https://doi.org/10.1002/pssc.201100764
State	Published - Aug 2012

Keywords

Flux ratio
GaSb
MBE
ZnTe

ASJC Scopus subject areas

Condensed Matter Physics

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10.1002/pssc.201100764

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@article{7fa5c292ab0c48ffab51ce7499113008,

title = "Influence of Te/Zn flux ratio on aluminium doped ZnTe grown by MBE on GaSb substrates",

abstract = "Aluminum doped ZnTe epitaxial layers have been grown on GaSb substrates by molecular beam epitaxy under different Te/Zn flux ratios, while the flux ratio is varied by keeping Te flux constant and changing Zn flux. The Te/Zn flux ratio ∼0.9 leads to the narrowest full width at half maximum of x-ray diffraction rocking curve. Indium deposition is applied to improve the contact conductivity, characterized by current-voltage measurements. The effect of annealing in forming gas (5% H 2+ 95% Ar) has been studied and the secondary ion mass spectrometry results indicate Zn vacancies are suppressed in the order of 2 magnitudes by decreasing Te/Zn flux ratio from 2 to 0.5. This study assists the understanding and realization of effective n-type doping of ZnTe by the approach of suppressing Zn vacancies.",

keywords = "Flux ratio, GaSb, MBE, ZnTe",

author = "Qiang Zhang and Xinyu Liu and Dinezza, {Michael J.} and Jin Fan and D. Ding and Furdyna, {Jacek K.} and Yong-Hang Zhang",

year = "2012",

month = aug,

doi = "10.1002/pssc.201100764",

language = "English (US)",

volume = "9",

pages = "1724--1727",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

number = "8-9",

}

TY - JOUR

T1 - Influence of Te/Zn flux ratio on aluminium doped ZnTe grown by MBE on GaSb substrates

AU - Zhang, Qiang

AU - Liu, Xinyu

AU - Dinezza, Michael J.

AU - Fan, Jin

AU - Ding, D.

AU - Furdyna, Jacek K.

AU - Zhang, Yong-Hang

PY - 2012/8

Y1 - 2012/8

N2 - Aluminum doped ZnTe epitaxial layers have been grown on GaSb substrates by molecular beam epitaxy under different Te/Zn flux ratios, while the flux ratio is varied by keeping Te flux constant and changing Zn flux. The Te/Zn flux ratio ∼0.9 leads to the narrowest full width at half maximum of x-ray diffraction rocking curve. Indium deposition is applied to improve the contact conductivity, characterized by current-voltage measurements. The effect of annealing in forming gas (5% H 2+ 95% Ar) has been studied and the secondary ion mass spectrometry results indicate Zn vacancies are suppressed in the order of 2 magnitudes by decreasing Te/Zn flux ratio from 2 to 0.5. This study assists the understanding and realization of effective n-type doping of ZnTe by the approach of suppressing Zn vacancies.

AB - Aluminum doped ZnTe epitaxial layers have been grown on GaSb substrates by molecular beam epitaxy under different Te/Zn flux ratios, while the flux ratio is varied by keeping Te flux constant and changing Zn flux. The Te/Zn flux ratio ∼0.9 leads to the narrowest full width at half maximum of x-ray diffraction rocking curve. Indium deposition is applied to improve the contact conductivity, characterized by current-voltage measurements. The effect of annealing in forming gas (5% H 2+ 95% Ar) has been studied and the secondary ion mass spectrometry results indicate Zn vacancies are suppressed in the order of 2 magnitudes by decreasing Te/Zn flux ratio from 2 to 0.5. This study assists the understanding and realization of effective n-type doping of ZnTe by the approach of suppressing Zn vacancies.

KW - Flux ratio

KW - GaSb

KW - MBE

KW - ZnTe

UR - http://www.scopus.com/inward/record.url?scp=84865739395&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84865739395&partnerID=8YFLogxK

U2 - 10.1002/pssc.201100764

DO - 10.1002/pssc.201100764

M3 - Article

AN - SCOPUS:84865739395

SN - 1862-6351

VL - 9

SP - 1724

EP - 1727

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 8-9

ER -

Influence of Te/Zn flux ratio on aluminium doped ZnTe grown by MBE on GaSb substrates

Abstract

Keywords

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