Influence of temperature ramp on the materials properties of GaSb grown on ZnTe using molecular beam epitaxy

Jin Fan; Lu Ouyang; Xinyu Liu; Ding Ding; Jacek K. Furdyna; David Smith; Yong-Hang Zhang

doi:10.1116/1.3681280

Influence of temperature ramp on the materials properties of GaSb grown on ZnTe using molecular beam epitaxy

Jin Fan, Lu Ouyang, Xinyu Liu, Ding Ding, Jacek K. Furdyna, David Smith, Yong-Hang Zhang

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Abstract

This paper reports high-quality GaSb grown on ZnTe using molecular beam epitaxy with a temperature ramp during growth, and investigates the influence of the temperature ramp on material properties. During growth, in situ reflection-high-energy electron diffraction shows rapid and smooth transition from ZnTe surface reconstruction to GaSb surface reconstruction. Post-growth structural characterization using x-ray diffraction and transmission electron microscopy reveals smooth interface morphology and low defect density. Strong photoluminescence emission is observed up to 200 K. The sample grown with a temperature ramp from 360 to 470 °C at a rate of 33 °C/min showed the narrowest bound exciton emission peak with a full width at half maximum of 15 meV.

Original language	English (US)
Article number	02B122
Journal	Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume	30
Issue number	2
DOIs	https://doi.org/10.1116/1.3681280
State	Published - Mar 2012

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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@article{2df5918aa52849f8a08e77d46980625b,

title = "Influence of temperature ramp on the materials properties of GaSb grown on ZnTe using molecular beam epitaxy",

abstract = "This paper reports high-quality GaSb grown on ZnTe using molecular beam epitaxy with a temperature ramp during growth, and investigates the influence of the temperature ramp on material properties. During growth, in situ reflection-high-energy electron diffraction shows rapid and smooth transition from ZnTe surface reconstruction to GaSb surface reconstruction. Post-growth structural characterization using x-ray diffraction and transmission electron microscopy reveals smooth interface morphology and low defect density. Strong photoluminescence emission is observed up to 200 K. The sample grown with a temperature ramp from 360 to 470 °C at a rate of 33 °C/min showed the narrowest bound exciton emission peak with a full width at half maximum of 15 meV.",

author = "Jin Fan and Lu Ouyang and Xinyu Liu and Ding Ding and Furdyna, {Jacek K.} and David Smith and Yong-Hang Zhang",

note = "Funding Information: The work at ASU was partially supported by Science Foundation Arizona, Contracts SRG 0339-08 and AFOSR Grant No. FA9550-10-1-0129. ASU and Notre Dame were also jointly supported by the Air Force Research Laboratory/Space Vehicles Directorate (Contract No. FA9453-08-2-0228) and an NSF grant (Grant No. ECCS-1002072). The authors gratefully acknowledge the use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy, the Center for Solid State Electronics Research, and the LeRoy Eyring Center for Solid State Science at Arizona State University.",

year = "2012",

month = mar,

doi = "10.1116/1.3681280",

language = "English (US)",

volume = "30",

journal = "Journal of Vacuum Science and Technology B",

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T1 - Influence of temperature ramp on the materials properties of GaSb grown on ZnTe using molecular beam epitaxy

AU - Fan, Jin

AU - Ouyang, Lu

AU - Liu, Xinyu

AU - Ding, Ding

AU - Furdyna, Jacek K.

AU - Smith, David

AU - Zhang, Yong-Hang

N1 - Funding Information: The work at ASU was partially supported by Science Foundation Arizona, Contracts SRG 0339-08 and AFOSR Grant No. FA9550-10-1-0129. ASU and Notre Dame were also jointly supported by the Air Force Research Laboratory/Space Vehicles Directorate (Contract No. FA9453-08-2-0228) and an NSF grant (Grant No. ECCS-1002072). The authors gratefully acknowledge the use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy, the Center for Solid State Electronics Research, and the LeRoy Eyring Center for Solid State Science at Arizona State University.

PY - 2012/3

Y1 - 2012/3

N2 - This paper reports high-quality GaSb grown on ZnTe using molecular beam epitaxy with a temperature ramp during growth, and investigates the influence of the temperature ramp on material properties. During growth, in situ reflection-high-energy electron diffraction shows rapid and smooth transition from ZnTe surface reconstruction to GaSb surface reconstruction. Post-growth structural characterization using x-ray diffraction and transmission electron microscopy reveals smooth interface morphology and low defect density. Strong photoluminescence emission is observed up to 200 K. The sample grown with a temperature ramp from 360 to 470 °C at a rate of 33 °C/min showed the narrowest bound exciton emission peak with a full width at half maximum of 15 meV.

AB - This paper reports high-quality GaSb grown on ZnTe using molecular beam epitaxy with a temperature ramp during growth, and investigates the influence of the temperature ramp on material properties. During growth, in situ reflection-high-energy electron diffraction shows rapid and smooth transition from ZnTe surface reconstruction to GaSb surface reconstruction. Post-growth structural characterization using x-ray diffraction and transmission electron microscopy reveals smooth interface morphology and low defect density. Strong photoluminescence emission is observed up to 200 K. The sample grown with a temperature ramp from 360 to 470 °C at a rate of 33 °C/min showed the narrowest bound exciton emission peak with a full width at half maximum of 15 meV.

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JF - Journal of Vacuum Science and Technology B

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Influence of temperature ramp on the materials properties of GaSb grown on ZnTe using molecular beam epitaxy

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