This paper reports high-quality GaSb grown on ZnTe using molecular beam epitaxy with a temperature ramp during growth, and investigates the influence of the temperature ramp on material properties. During growth, in situ reflection-high-energy electron diffraction shows rapid and smooth transition from ZnTe surface reconstruction to GaSb surface reconstruction. Post-growth structural characterization using x-ray diffraction and transmission electron microscopy reveals smooth interface morphology and low defect density. Strong photoluminescence emission is observed up to 200 K. The sample grown with a temperature ramp from 360 to 470 °C at a rate of 33 °C/min showed the narrowest bound exciton emission peak with a full width at half maximum of 15 meV.

Original languageEnglish (US)
Article number02B122
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Issue number2
StatePublished - 2012


ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this