Abstract

This study of III-N semiconductor surfaces demonstrates that concurrent application of in situ reflection high energy electron diffraction and glancing-angle reflection electron energy loss spectroscopy (REELS) can be used during reactive molecular beam epitaxy to provide a surface sensitive, real-time determination of the surface texture and film composition. REELS spectra of rough AlN, GaN, and InN surfaces are dominated by bulk plasmons. Nearly atomically smooth topographies are found to shift the energy of the maximum of the plasmon loss peak to lower values, presumably as a result of the additional contributions from the surface plasmons. This shift to lower energies correlates well with the fraction of the topmost surface, which lies within a few degrees from the sample surface plane.

Original languageEnglish (US)
Article number041602
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume29
Issue number4
DOIs
StatePublished - Jul 2011

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Electron energy loss spectroscopy
Surface topography
topography
energy dissipation
electron energy
Semiconductor materials
spectroscopy
Plasmons
plasmons
Reflection high energy electron diffraction
shift
Molecular beam epitaxy
high energy electrons
Topography
molecular beam epitaxy
textures
electron diffraction
Textures
energy
Chemical analysis

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Influence of surface topography on in situ reflection electron energy loss spectroscopy plasmon spectra of AlN, GaN, and InN semiconductors. / Strawbridge, B.; Cernetic, N.; Chapley, J.; Singh, Rakesh; Mahajan, S.; Newman, Nathan.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 29, No. 4, 041602, 07.2011.

Research output: Contribution to journalArticle

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AU - Newman, Nathan

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