Abstract

Ga-doped ZnO films were prepared at 10 mTorr of oxygen over a broad temperature range using pulsed laser deposition. The carrier concentration of as-deposited films decreased monotonically with deposition temperature over a temperature range of 25°C to 450°C. Post-deposition annealing of as-deposited films in forming gas (5% H 2 in argon) or vacuum resulted in a substantial increase in both carrier concentration and electron mobility. The figure of merit was highest for films deposited at 250°C then annealed in forming gas at 400°C. The optical transmittance was near 90% throughout the visible and near-infrared spectral regions. These results indicate that Ga-doped ZnO is a viable alternative to transparent indium-based conductive oxides.

Original languageEnglish (US)
Pages (from-to)419-428
Number of pages10
JournalJournal of Electronic Materials
Volume40
Issue number4
DOIs
StatePublished - Apr 2011

Fingerprint

Pulsed laser deposition
pulsed laser deposition
Materials properties
Annealing
annealing
Substrates
Carrier concentration
Gases
Temperature
Indium
temperature
Argon
Electron mobility
Opacity
electron mobility
gases
figure of merit
Oxides
indium
transmittance

Keywords

  • Ga-doped ZnO
  • optoelectronics
  • pulsed laser deposition
  • solar cells
  • Transparent conductive oxide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Influence of substrate temperature and post-deposition annealing on material properties of Ga-doped ZnO prepared by pulsed laser deposition. / Scott, Robin C.; Leedy, Kevin D.; Bayraktaroglu, Burhan; Look, David C.; Smith, David; Ding, Ding; Lu, Xianfeng; Zhang, Yong-Hang.

In: Journal of Electronic Materials, Vol. 40, No. 4, 04.2011, p. 419-428.

Research output: Contribution to journalArticle

Scott, Robin C. ; Leedy, Kevin D. ; Bayraktaroglu, Burhan ; Look, David C. ; Smith, David ; Ding, Ding ; Lu, Xianfeng ; Zhang, Yong-Hang. / Influence of substrate temperature and post-deposition annealing on material properties of Ga-doped ZnO prepared by pulsed laser deposition. In: Journal of Electronic Materials. 2011 ; Vol. 40, No. 4. pp. 419-428.
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