Abstract

Ga-doped ZnO films were prepared at 10 mTorr of oxygen over a broad temperature range using pulsed laser deposition. The carrier concentration of as-deposited films decreased monotonically with deposition temperature over a temperature range of 25°C to 450°C. Post-deposition annealing of as-deposited films in forming gas (5% H 2 in argon) or vacuum resulted in a substantial increase in both carrier concentration and electron mobility. The figure of merit was highest for films deposited at 250°C then annealed in forming gas at 400°C. The optical transmittance was near 90% throughout the visible and near-infrared spectral regions. These results indicate that Ga-doped ZnO is a viable alternative to transparent indium-based conductive oxides.

Original languageEnglish (US)
Pages (from-to)419-428
Number of pages10
JournalJournal of Electronic Materials
Volume40
Issue number4
DOIs
StatePublished - Apr 1 2011

Keywords

  • Ga-doped ZnO
  • Transparent conductive oxide
  • optoelectronics
  • pulsed laser deposition
  • solar cells

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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